公开(公告)号：US20180010262A1

公开(公告)日：2018-01-11

申请号：US15703342

申请日：2017-09-13

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takashi SAKURADA ,  Tomohiro KAWASE ,  Yoshiaki HAGI

IPC: C30B27/00 ,  C30B29/40 ,  C30B11/00

Abstract: Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film (31) on the inner wall of a growth container (10) having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film (31) into contact with boron oxide melt containing silicon oxide to form a boron oxide film (32) containing silicon oxide on the inner wall of the growth container (10); forming raw material melt (34) above seed crystal (20) placed in and on the bottom section of the growth container (10); and solidifying the raw material melt (34) from the seed crystal (20) side to grow a semiconductor single crystal.

公开(公告)号：US20140357067A1

公开(公告)日：2014-12-04

申请号：US14461838

申请日：2014-08-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Satoshi ARAKAWA ,  Michimasa MIYANAGA ,  Takashi SAKURADA ,  Yoshiyuki YAMAMOTO ,  Hideaki NAKAHATA

IPC: H01L21/02

CPC classification number: H01L21/02021 ,  C30B25/00 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02013 ,  H01L21/02389

Abstract: A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.

Abstract translation: 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。

公开(公告)号：US20130312878A1

公开(公告)日：2013-11-28

申请号：US13953421

申请日：2013-07-29

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takashi SAKURADA ,  Tomohiro KAWASE

IPC: H01B1/02 ,  C22F1/16

CPC classification number: H01B1/02 ,  C22F1/16 ,  C30B29/42 ,  C30B33/02 ,  Y10T428/24355

Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10−2 cm2 or at least 1×10−3 cm2.

Abstract translation: 导电GaAs晶体的Si原子浓度大于1×1017cm-3，其中包含在晶体中的尺寸至少为30nm的析出物的密度为至多400cm-2。 在这种情况下，优选导电性GaAs晶体的位错密度为2×10 -2 cm 2以下或至少1×10 -3 cm 2。

公开(公告)号：US20230059737A1

公开(公告)日：2023-02-23

申请号：US17793399

申请日：2021-01-19

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hironori ITOH ,  Taro NISHIGUCHI ,  Takashi SAKURADA

IPC: C30B29/36 ,  H01L21/02 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66

Abstract: A silicon carbide epitaxial substrate according to a present disclosure includes a silicon carbide substrate and a silicon carbide epitaxial layer disposed on the silicon carbide substrate. The silicon carbide epitaxial layer includes a boundary surface in contact with the silicon carbide substrate and a main surface opposite to the boundary surface. The main surface has an outer circumferential edge, an outer circumferential region extending within 5 mm from the outer circumferential edge, and a central region surrounded by the outer circumferential region. When an area density of double Shockley stacking faults in the outer circumferential region is defined as a first area density, and an area density of double Shockley stacking faults in the central region is defined as a second area density, the first area density is five or more times as large as the second area density, the second area density is 0.2 cm−2 or more.

公开(公告)号：US20210054529A1

公开(公告)日：2021-02-25

申请号：US16074143

申请日：2017-01-30

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA ,  Takashi SAKURADA ,  Eiryo TAKASUKA ,  Shunsaku UETA ,  Sho SASAKI ,  Naoki KAJI ,  Hidehiko MISHIMA ,  Hirokazu EGUCHI

IPC: C30B29/36 ,  G01N23/207

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

公开(公告)号：US20230369411A1

公开(公告)日：2023-11-16

申请号：US18029903

申请日：2021-07-27

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takashi SAKURADA ,  Taro NISHIGUCHI ,  Tetsuro KONDO ,  Naoki MATSUMOTO ,  Makoto SASAKI ,  Hirofumi YAMAMOTO

IPC: H01L29/16 ,  C30B29/36 ,  H01L21/02 ,  H01L23/544

CPC classification number: H01L29/1608 ,  C30B29/36 ,  H01L21/02378 ,  H01L23/544 ,  H01L2223/54426

Abstract: A method of manufacturing a silicon carbide semiconductor device includes the following steps. In a silicon carbide substrate including a silicon carbide single-crystal substrate and a silicon carbide epitaxial film provided on the silicon carbide single-crystal substrate, a reference mark serving as a reference of two dimensional position coordinates is formed. After forming the reference mark, at least one of polishing or cleaning is performed on a reference mark formation surface of the silicon carbide substrate. Position coordinates of a defect present in the silicon carbide substrate are specified based on the reference mark. A device active region is formed in the silicon carbide substrate. Position coordinates of the device active region are specified based on the reference mark. A pass/fail judgement of the device active region is made by associating the position coordinates of the defect with the position of the device active region.

公开(公告)号：US20230081506A1

公开(公告)日：2023-03-16

申请号：US17993200

申请日：2022-11-23

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA ,  Takashi SAKURADA ,  Eiryo TAKASUKA ,  Shunsaku UETA ,  Sho SASAKI ,  Naoki KAJI ,  Hidehiko MISHIMA ,  Hirokazu EGUCHI

IPC: C30B29/36 ,  G01N23/207

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

公开(公告)号：US20180261354A1

公开(公告)日：2018-09-13

申请号：US15976184

申请日：2018-05-10

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takashi SAKURADA ,  Tomohiro KAWASE

IPC: H01B1/02 ,  C22F1/16 ,  C30B29/42 ,  C30B33/02

CPC classification number: H01B1/02 ,  C22F1/16 ,  C30B29/42 ,  C30B33/02 ,  Y10T428/24355

Abstract: An electrically conductive GaAs crystal has an atomic concentration of Si more than 1×1017 cm−3, wherein density of precipitates having sizes of at least 30 nm contained in the crystal is at most 400 cm−2. In this case, it is preferable that the conductive GaAs crystal has a dislocation density of at most 2×10−2 cm2 or at least 1×10−3 cm2.

公开(公告)号：US20160083865A1

公开(公告)日：2016-03-24

申请号：US14828807

申请日：2015-08-18

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takashi SAKURADA ,  Tomohiro KAWASE ,  Tsutomu HORI ,  Sho SASAKI

IPC: C30B23/06 ,  C30B33/02

CPC classification number: C30B23/063 ,  C30B29/36 ,  C30B33/02

Abstract: After growing a silicon carbide single crystal, silicon carbide single crystal is cooled. The step of growing silicon carbide single crystal includes a step of growing silicon carbide single crystal while maintaining the temperature of a second main surface of a base opposite to a first main surface to be lower than the temperature of a surface of silicon carbide single crystal facing a silicon carbide source material. In the step of cooling silicon carbide single crystal, silicon carbide single crystal is cooled while maintaining the temperature of second main surface of base to be not less than the temperature of surface of silicon carbide single crystal.

Abstract translation: 生长碳化硅单晶后，碳化硅单晶被冷却。 生长碳化硅单晶的步骤包括生长碳化硅单晶同时保持与第一主表面相反的第二主表面的温度低于碳化硅单晶面的温度的步骤 碳化硅源材料。 在冷却碳化硅单晶的步骤中，将碳化硅单晶冷却，同时保持基体的第二主表面的温度不低于碳化硅单晶表面的温度。