公开(公告)号：US20230369411A1

公开(公告)日：2023-11-16

申请号：US18029903

申请日：2021-07-27

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Takashi SAKURADA ,  Taro NISHIGUCHI ,  Tetsuro KONDO ,  Naoki MATSUMOTO ,  Makoto SASAKI ,  Hirofumi YAMAMOTO

IPC: H01L29/16 ,  C30B29/36 ,  H01L21/02 ,  H01L23/544

CPC classification number: H01L29/1608 ,  C30B29/36 ,  H01L21/02378 ,  H01L23/544 ,  H01L2223/54426

Abstract: A method of manufacturing a silicon carbide semiconductor device includes the following steps. In a silicon carbide substrate including a silicon carbide single-crystal substrate and a silicon carbide epitaxial film provided on the silicon carbide single-crystal substrate, a reference mark serving as a reference of two dimensional position coordinates is formed. After forming the reference mark, at least one of polishing or cleaning is performed on a reference mark formation surface of the silicon carbide substrate. Position coordinates of a defect present in the silicon carbide substrate are specified based on the reference mark. A device active region is formed in the silicon carbide substrate. Position coordinates of the device active region are specified based on the reference mark. A pass/fail judgement of the device active region is made by associating the position coordinates of the defect with the position of the device active region.