公开(公告)号：US20230081506A1

公开(公告)日：2023-03-16

申请号：US17993200

申请日：2022-11-23

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA ,  Takashi SAKURADA ,  Eiryo TAKASUKA ,  Shunsaku UETA ,  Sho SASAKI ,  Naoki KAJI ,  Hidehiko MISHIMA ,  Hirokazu EGUCHI

IPC: C30B29/36 ,  G01N23/207

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

公开(公告)号：US20130108788A1

公开(公告)日：2013-05-02

申请号：US13716886

申请日：2012-12-17

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Eiryo TAKASUKA ,  Toshi UEDA ,  Toshiyuki KURAMOTO ,  Masaki UENO

IPC: C23C16/455

CPC classification number: C23C16/455 ,  C23C16/4401 ,  C23C16/45517 ,  C23C16/45519 ,  C23C16/45565 ,  C30B25/165 ,  C30B29/403 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  Y10T428/31504

Abstract: A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.

公开(公告)号：US20130255568A1

公开(公告)日：2013-10-03

申请号：US13780127

申请日：2013-02-28

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Hiroki INOUE ,  Makoto SASAKI ,  Shin HARADA ,  Eiryo TAKASUKA ,  Shinsuke FUJIWARA

IPC: C30B23/06 ,  C30B23/02

CPC classification number: C30B23/066 ,  C30B23/025 ,  C30B29/36

Abstract: A method for manufacturing silicon carbide single crystal having a diameter larger than 100 mm by sublimation includes the following steps. A seed substrate made of silicon carbide and silicon carbide raw material are prepared. Silicon carbide single crystal is grown on the growth face of the seed substrate by sublimating the silicon carbide raw material. In the step of growing silicon carbide single crystal, the maximum growing rate of the silicon carbide single crystal growing on the growth face of the seed substrate is greater than the maximum growing rate of the silicon carbide crystal growing on the surface of the silicon carbide raw material. Thus, there can be provided a method for manufacturing silicon carbide single crystal allowing a thick silicon carbide single crystal film to be obtained, when silicon carbide single crystal having a diameter larger than 100 mm is grown.

Abstract translation: 通过升华制造直径大于100mm的碳化硅单晶的方法包括以下步骤。 制备由碳化硅和碳化硅原料制成的种籽基材。 碳化硅单晶通过使碳化硅原料升华而在种底基材的生长面上生长。 在生长碳化硅单晶的步骤中，生长在种子基底的生长面上的碳化硅单晶的最大生长速率大于在碳化硅原料的表面上生长的碳化硅晶体的最大生长速率 材料。 因此，当生产直径大于100mm的碳化硅单晶时，可以提供制造碳化硅单晶的方法，以获得厚的碳化硅单晶膜。

公开(公告)号：US20210054529A1

公开(公告)日：2021-02-25

申请号：US16074143

申请日：2017-01-30

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Kyoko OKITA ,  Takashi SAKURADA ,  Eiryo TAKASUKA ,  Shunsaku UETA ,  Sho SASAKI ,  Naoki KAJI ,  Hidehiko MISHIMA ,  Hirokazu EGUCHI

IPC: C30B29/36 ,  G01N23/207

Abstract: In a case where a detector is positioned in a [11-20] direction, and where a first measurement region including a center of a main surface is irradiated with an X ray in a direction within ±15° relative to a [−1-120] direction, a ratio of a maximum intensity of a first intensity profile is more than or equal to 1500. In a case where the detector is positioned in a direction parallel to a [−1100] direction, and where the first measurement region is irradiated with an X ray in a direction within ±6° relative to a [1-100] direction, a ratio of a maximum intensity of a second intensity profile is more than or equal to 1500. An absolute value of a difference between maximum value and minimum value of energy at which the first intensity profile indicates a maximum value is less than or equal to 0.06 keV.

公开(公告)号：US20170314161A1

公开(公告)日：2017-11-02

申请号：US15520488

申请日：2015-11-18

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Sho SASAKI ,  Eiryo TAKASUKA ,  Shin HARADA ,  Tsutomu HORI

IPC: C30B29/36 ,  C30B23/06

CPC classification number: C30B29/36 ,  C30B23/06 ,  C30B23/066 ,  H05B3/62 ,  H05B6/24 ,  H05B2203/003

Abstract: A crucible having a tubular inner surface is prepared. A source material is arranged so as to make contact with the inner surface, and a seed crystal is arranged in the crucible so as to face the source material. A silicon carbide single crystal grows on the seed crystal by sublimation of the source material. The inner surface is formed of a first region surrounding the source material and a second region other than the first region. In the growing a silicon carbide single crystal, an amount of heat per unit area in the first region is smaller than an amount of heat per unit area in the second region.