公开(公告)号：US11859271B2

公开(公告)日：2024-01-02

申请号：US16610285

申请日：2018-05-04

Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA

Inventor： Jian-Ping Wang ,  YanFeng Jiang ,  Md Mehedi ,  Yiming Wu ,  Bin Ma ,  Jinming Liu ,  Delin Zhang

IPC: C22C38/00 ,  C22C33/00 ,  H01F1/11 ,  H01F7/02 ,  H01F41/02

CPC classification number: C22C38/001 ,  C22C33/006 ,  H01F1/11 ,  H01F7/021 ,  H01F41/0253 ,  C22C2200/04 ,  C22C2202/02

Abstract: An example composition may include a plurality of grains including an iron nitride phase. The plurality of grains may have an average grain size between about 10 nm and about 200 nm. An example technique may include treating a composition including a plurality of grains including an iron-based phase to adjust an average grain size of the plurality of grains to between about 20 nm and about 100 nm. The example technique may include nitriding the plurality of grains to form or grow an iron nitride phase.

公开(公告)号：US20220208241A1

公开(公告)日：2022-06-30

申请号：US17450852

申请日：2021-10-14

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Delin Zhang ,  Protyush Sahu

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/04 ,  G11C11/18 ,  H01L43/10 ,  H01L43/06

Abstract: A magnetic device includes a layer stack comprising a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; a dielectric barrier layer on the second ferromagnetic layer; an insertion layer positioned between the second ferromagnetic layer and the dielectric barrier layer; and a fixed layer or an electrode on the dielectric barrier layer. In some examples, a magnetic orientation of the second ferromagnetic layer is switched by a bias voltage across the layer stack without application of an external magnetic field; an antiferromagnetic coupling of the first and second ferromagnetic layers is increased by the bias voltage applying a negative charge to the fixed layer or the electrode, and the antiferromagnetic coupling of the first and second ferromagnetic layers is decreased by the bias voltage applying a positive charge to the fixed layer or the electrode.

公开(公告)号：US11875934B2

公开(公告)日：2024-01-16

申请号：US16423516

申请日：2019-05-28

Applicant: REGENTS OF THE UNIVERSITY OF MINNESOTA

Inventor： Jian-Ping Wang ,  Md Mehedi ,  YanFeng Jiang ,  Bin Ma ,  Delin Zhang ,  Fan Zhang ,  Jinming Liu

IPC: C01B21/06 ,  H01F1/10 ,  C22C38/00 ,  H01F41/02 ,  H01F1/03 ,  C22C38/06 ,  H01F1/00 ,  C22C38/16

CPC classification number: H01F41/0253 ,  C01B21/0622 ,  H01F1/10 ,  C21D2201/05 ,  C21D2211/008 ,  C22C38/001 ,  C22C38/06 ,  C22C38/16 ,  C22C2200/04 ,  C22C2202/02 ,  H01F1/0009 ,  H01F1/03

Abstract: The disclosure is directed to an iron-nitride material having a polycrystalline microstructure including a plurality of elongated crystallographic grains with grain boundaries, the iron-nitride material including at least one of an α″-Fe16N2 phase and a body-center-tetragonal (bct) phase comprising Fe and N. The disclosure is also directed a method producing an iron-nitride material. The method includes some combinations of preparing a raw material comprising iron, carrying out a microstructure build-up by annealing the prepared raw material at an elevated temperature and subsequently quenching the prepared raw material to produce a microstructure build-up material, annealing the microstructure build-up material, reducing the microstructure build-up material in a hydrogen environment, nitriding the reduced material to produce a nitrided material and subsequently quenching the nitrided material to a martensitic transformation temperature, stress annealing the nitrided material, and magnetic field annealing the stress-annealed material.

公开(公告)号：US20200176042A1

公开(公告)日：2020-06-04

申请号：US16782845

申请日：2020-02-05

Applicant: Regents of the University of Minnesota ,  Carnegie Mellon University

Inventor： Jian-Ping Wang ,  Delin Zhang ,  Sara A. Majetich ,  Mukund Bapna

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.

公开(公告)号：US20180287052A1

公开(公告)日：2018-10-04

申请号：US15829134

申请日：2017-12-01

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Delin Zhang

IPC: H01L43/10 ,  H01L43/04 ,  H01L43/08 ,  H01L43/14 ,  G11C11/16 ,  H01L27/22 ,  H01L43/06 ,  G11C11/18

Abstract: Articles including a fixing layer and a free layer including a layer including an FePd alloy. The free layer may include a composite layer including a perpendicular synthetic antiferromagnetic (p-SAF) structure. Techniques for forming and using articles including FePd alloy layers or p-SAF structures. Example articles and techniques may be usable for storage and logic devices.

公开(公告)号：US20220271218A1

公开(公告)日：2022-08-25

申请号：US17249105

申请日：2021-02-19

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Thomas Jon Peterson ,  Anthony William Hurben ,  Delin Zhang

IPC: H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G06N3/04

Abstract: A magnetic device may include a layer stack including a work function structure, a dielectric layer, and a ferromagnetic layer, where the ferromagnetic layer is positioned between the work function structure and the dielectric layer. The work function structure is configured to deplete electrons from the ferromagnetic layer or accumulate electrons in the ferromagnetic layer. A magnetization orientation of the ferromagnetic layer is configured to be switched by a voltage applied across the layer stack or by a voltage applied across or through the work function structure.

公开(公告)号：US10546997B2

公开(公告)日：2020-01-28

申请号：US15829134

申请日：2017-12-01

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Delin Zhang

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/04 ,  H01L43/08 ,  G11C11/18 ,  H01L27/22 ,  H01L43/06 ,  H01L43/14

Abstract: Articles including a fixing layer and a free layer including a layer including an FePd alloy. The free layer may include a composite layer including a perpendicular synthetic antiferromagnetic (p-SAF) structure. Techniques for forming and using articles including FePd alloy layers or p-SAF structures. Example articles and techniques may be usable for storage and logic devices.

公开(公告)号：US11735242B2

公开(公告)日：2023-08-22

申请号：US17450852

申请日：2021-10-14

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Delin Zhang ,  Protyush Sahu

IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80

Abstract: A magnetic device includes a layer stack comprising a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; a dielectric barrier layer on the second ferromagnetic layer; an insertion layer positioned between the second ferromagnetic layer and the dielectric barrier layer; and a fixed layer or an electrode on the dielectric barrier layer. In some examples, a magnetic orientation of the second ferromagnetic layer is switched by a bias voltage across the layer stack without application of an external magnetic field; an antiferromagnetic coupling of the first and second ferromagnetic layers is increased by the bias voltage applying a negative charge to the fixed layer or the electrode, and the antiferromagnetic coupling of the first and second ferromagnetic layers is decreased by the bias voltage applying a positive charge to the fixed layer or the electrode.

公开(公告)号：US11462682B2

公开(公告)日：2022-10-04

申请号：US17249105

申请日：2021-02-19

Applicant: Regents of the University of Minnesota

Inventor： Jian-Ping Wang ,  Thomas Jon Peterson ,  Anthony William Hurben ,  Delin Zhang

IPC: G11C11/00 ,  H01L43/10 ,  G11C11/16 ,  G06N3/04 ,  H01L43/02 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic device may include a layer stack including a work function structure, a dielectric layer, and a ferromagnetic layer, where the ferromagnetic layer is positioned between the work function structure and the dielectric layer. The work function structure is configured to deplete electrons from the ferromagnetic layer or accumulate electrons in the ferromagnetic layer. A magnetization orientation of the ferromagnetic layer is configured to be switched by a voltage applied across the layer stack or by a voltage applied across or through the work function structure.

公开(公告)号：US10854257B2

公开(公告)日：2020-12-01

申请号：US16782845

申请日：2020-02-05

Applicant: Regents of the University of Minnesota ,  Carnegie Mellon University

Inventor： Jian-Ping Wang ,  Delin Zhang ,  Sara A. Majetich ,  Mukund Bapna

IPC: H01L43/00 ,  G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  B82Y25/00 ,  H01L27/22

Abstract: A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a non-magnetic spacer layer on the first ferromagnetic layer, where the non-magnetic spacer layer comprises at least one of Ru, Ir, Ta, Cr, W, Mo, Re, Hf, Zr, or V; a second ferromagnetic layer on the non-magnetic spacer layer; and an oxide layer on the second ferromagnetic layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field or a current. A thickness and composition of the non-magnetic spacer layer may be selected to enable a switching direction of the magnetic orientation of the second ferromagnetic layer to be controlled by a sign of the bias voltage.