Abstract:
A phase-locked loop circuit calibration method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: receiving a first signal from a host system; generating a jitter signal by the memory storage device; generating a second signal according to the first signal and the jitter signal; performing a phase-lock operation on the second signal to generate a third signal by a phase-locked loop circuit; and detecting the third signal to calibrate an electronic parameter of the phase-locked loop circuit.
Abstract:
A phase-locked loop circuit calibration method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: receiving a first signal from a host system; generating a jitter signal by the memory storage device; generating a second signal according to the first signal and the jitter signal; performing a phase-lock operation on the second signal to generate a third signal by a phase-locked loop circuit; and detecting the third signal to calibrate an electronic parameter of the phase-locked loop circuit.
Abstract:
A clock and data recovery circuit module and a phase lock method are provided. The module includes a phase detection circuit, a converter circuit and a voltage control oscillation circuit. The phase detection circuit is configured to detect a phase difference between a data signal and a feedback clock. The converter circuit is coupled to the phase detection circuit and configured to output a first phase control voltage and a second phase control voltage according to the phase difference. The voltage control oscillation circuit is coupled to the converter circuit and configured to receive the first phase control voltage and the second phase control voltage and output the feedback clock according to the first phase control voltage and the second phase control voltage.
Abstract:
A memory storage device, a memory control circuit unit, and a clock adjusting circuit disposed on a plurality of layers are provided. The clock adjusting circuit includes a detection circuit, a control voltage generating circuit, and a voltage-controlled oscillator (VCO). The detection circuit detects a signal characteristic difference between an input signal and an output signal to generate a first signal. The control voltage generating circuit is coupled to the detection circuit and generates a control voltage according to the first signal. The VCO is coupled to the control voltage generating circuit and includes an inductor and a capacitor. The VCO receives the control voltage and starts oscillating according to an impedance characteristic of the inductor and the capacitor to generate the output signal. The inductor is disposed on a pad layer among the layers. Thereby, the manufacturing cost is reduced.
Abstract:
A voltage controlled oscillator module including a VCO unit and a gain adjustment unit is provided. The VCO unit is configured to generate a frequency signal based on a control voltage. The gain adjustment unit is coupled to the VCO unit and configured to receive a first adjustment voltage, a second adjustment voltage, and a reference voltage and accordingly adjusts the control voltage to adjust a frequency value of the frequency signal. The gain adjustment unit includes an adjustment circuit unit and a reference circuit unit. A first voltage-frequency curve of the frequency value of the frequency signal and a voltage value of the first adjustment voltage changes in response to a structure characteristic of the adjustment circuit unit. Furthermore, a frequency generating system and a method for adjusting a signal frequency of the VCO module are provided.
Abstract:
A phase lock method is provided. The method includes: sampling a data signal according to a plurality of reference clocks and outputting a sampling result; performing a first logic operation according to the sampling result and outputting a first logic result; delaying the first logic result and outputting the delayed first logic result; performing a second logic operation according to the first logic result and the delayed first logic result and outputting a second logic result; outputting a first frequency adjustment signal according to the second logic result; and performing a phase lock according to the first frequency adjustment signal and a frequency of the data signal.
Abstract:
A memory storage device having a clock and data recovery circuit module are provided. The module includes sampling circuits, a first logic circuit module, a delay circuit module, a second logic circuit module, a frequency adjustment circuit and a clock control circuit. The sampling circuits sample a data signal according to reference clocks. The first logic circuit module performs a first logic operation according to a sampling result. The delay circuit module delays a result of the first logic operation. The second logic circuit module performs a second logic operation according to said result and the delayed first logic result. The frequency adjustment circuit outputs a frequency adjustment signal according to a result of the second logic operation, and the clock control circuit performs a phase locking accordingly. Therefore, a circuit complexity of the clock and data recovery circuit module may be reduced.
Abstract:
A clock and data recovery circuit module, a memory storage device and a phase lock method are provided. The module includes sampling circuits, a first logic circuit module, a delay circuit module, a second logic circuit module, a frequency adjustment circuit and a clock control circuit. The sampling circuits sample a data signal according to reference clocks. The first logic circuit module performs a first logic operation according to a sampling result. The delay circuit module delays a result of the first logic operation. The second logic circuit module performs a second logic operation according to said result and the delayed first logic result. The frequency adjustment circuit outputs a frequency adjustment signal according to a result of the second logic operation, and the clock control circuit performs a phase locking accordingly. Therefore, a circuit complexity of the clock and data recovery circuit module may be reduced.
Abstract:
A controlling method for connector is provided, which includes: receiving a first signal stream under a condition that a squelch detector is turned-off; determining whether the first signal stream contains a burst signal under a first operating frequency; if the first signal stream contains the burst signal, turning on the squelch detector and determining by the squelch detector under a second operating frequency whether a second signal stream is a waking signal, wherein the second signal stream is received after receiving the first signal stream and the second operating frequency is greater than the first operating frequency. The controlling method further includes: if the second signal stream is the waking signal, changing an operating state of the connector to an active state. In this way, the power consumption of the connector is reduced.
Abstract:
An equalizer tuning method for a memory storage device is provided according to an exemplary embodiment of the disclosure. The method includes: receiving a first signal; modulating the first signal by a first modulation circuit according to a first type parameter and modulating the first signal by a second modulation circuit according to a second type parameter; detecting a signal eye-width value and a signal eye-height value of the modulated first signal; and adjusting the first type parameter according to the detected signal eye-width value and adjusting the second type parameter according to the detected signal eye-height value.