公开(公告)号：US20140070343A1

公开(公告)日：2014-03-13

申请号：US13777643

申请日：2013-02-26

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Shigeto FUKATSU ,  Tatsuya KISHI ,  Masahiko NAKAYAMA ,  Akiyuki MURAYAMA

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

摘要： A magnetoresistive effect element in one or more embodiments of the present invention is provided with a memory layer with a variable magnetization direction having a magnetic anisotropy in a direction perpendicular to a film surface, a reference layer with an invariable magnetization direction having the magnetic anisotropy in a direction perpendicular to the film surface, and a tunnel barrier layer formed between the memory layer and the reference layer. The tunnel barrier layer has a first portion at the central part in the film surface and a second portion at a peripheral part. The second portion contains at least boron and oxygen.

摘要翻译： 在本发明的一个或多个实施例中的磁阻效应元件设置有具有在垂直于膜表面的方向上具有磁各向异性的可变磁化方向的存储层，具有磁性各向异性的不变磁化方向的参考层 垂直于膜表面的方向，以及形成在存储层和参考层之间的隧道势垒层。 隧道势垒层在膜表面的中心部分具有第一部分，在周边部分具有第二部分。 第二部分至少含有硼和氧。

公开(公告)号：US20230064865A1

公开(公告)日：2023-03-02

申请号：US17816772

申请日：2022-08-02

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Shigeto FUKATSU ,  Yukio NAKABAYASHI ,  Tatsuo SHIMIZU ,  Ryosuke IIJIMA

IPC分类号： H01L29/51 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66

摘要： According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include preparing a structure body, the structure body including a silicon carbide member and a first film stacked with the silicon carbide member. The first film includes silicon and oxygen. The method can include performing a first treatment of heat-treating the structure body in a first atmosphere including hydrogen. The method can include, after the first treatment, performing a second treatment of heat-treating the structure body in a second atmosphere including nitrogen and oxygen. An oxygen concentration in the second atmosphere is not less than 5 ppm and not more than 1000 ppm.

公开(公告)号：US20190296146A1

公开(公告)日：2019-09-26

申请号：US16113304

申请日：2018-08-27

申请人： Kabushiki Kaisha Toshiba

发明人： Tatsuo SHIMIZU ,  Ryosuke IIJIMA ,  Toshihide ITO ,  Shunsuke ASABA ,  Yukio NAKABAYASHI ,  Shigeto FUKATSU

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66 ,  H01L21/04 ,  H01L29/739 ,  B66B11/04

摘要： A semiconductor device of an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer disposed between the silicon carbide layer and the gate electrode; a first region disposed in the silicon carbide layer and containing nitrogen (N); and a second region disposed between the first region and the gate insulating layer, and containing at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), hydrogen (H), deuterium (D), and fluorine (F).

公开(公告)号：US20160284831A1

公开(公告)日：2016-09-29

申请号：US15056013

申请日：2016-02-29

申请人： Kabushiki Kaisha Toshiba

发明人： Aya SHINDOME ,  Masahiko KURAGUCHI ,  Hisashi SAITO ,  Shigeto FUKATSU ,  Miki YUMOTO ,  Yosuke KAJIWARA

IPC分类号： H01L29/778 ,  H01L29/205 ,  H01L29/423 ,  H01L21/265 ,  H01L21/266 ,  H01L21/76 ,  H01L29/66 ,  H01L29/20 ,  H01L29/06

CPC分类号： H01L21/2654 ,  H01L21/7605 ,  H01L29/2003 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/7786

摘要： A semiconductor device of an embodiment includes a first GaN-based semiconductor layer, a second GaN-based semiconductor layer provided on the first GaN-based semiconductor layer and having a larger bandgap than the first GaN-based semiconductor layer, a source electrode provided on the second GaN-based semiconductor layer, a drain electrode provided on the second GaN-based semiconductor layer, a recess provided between the source electrode and the drain electrode in the second GaN-based semiconductor layer, a gate insulating film provided on a surface of the recess, and a gate electrode provided on the gate insulating film and having an end portion in a gate width direction, located in the recess.

摘要翻译： 实施例的半导体器件包括第一GaN基半导体层，设置在第一GaN基半导体层上并具有比第一GaN基半导体层更大的带隙的第二GaN基半导体层，设置在第一GaN基半导体层上的源电极 第二GaN基半导体层，设置在第二GaN基半导体层上的漏电极，设置在第二GaN基半导体层中的源极和漏电极之间的凹部，设置在第二GaN基半导体层的表面上的栅极绝缘膜 所述凹部和设置在所述栅极绝缘膜上并且具有位于所述凹部中的栅极宽度方向上的端部的栅电极。

公开(公告)号：US20230084127A1

公开(公告)日：2023-03-16

申请号：US17653688

申请日：2022-03-07

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Toshihide ITO ,  Chiharu OTA ,  Shigeto FUKATSU ,  Johji NISHIO ,  Ryosuke IIJIMA

IPC分类号： H01L21/02 ,  H01L21/04

摘要： A semiconductor device manufacturing method of embodiments includes: forming a silicon oxide film on a surface of a silicon carbide layer; performing a first heat treatment in an atmosphere containing nitrogen gas at a temperature equal to or more than 1200° C. and equal to or less than 1600° C.; and performing a second heat treatment in an atmosphere containing nitrogen oxide gas at a temperature equal to or more than 750° C. and equal to or less than 1050° C.

公开(公告)号：US20180330949A1

公开(公告)日：2018-11-15

申请号：US15893950

申请日：2018-02-12

申请人： Kabushiki Kaisha Toshiba

发明人： Shunsuke ASABA ,  Ryosuke IIJIMA ,  Yukio NAKABAYASHI ,  Shigeto FUKATSU ,  Toshihide ITO

IPC分类号： H01L21/04 ,  H01L21/02 ,  H01L29/16 ,  H01L29/66

摘要： According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include performing a first heat treatment of a first film at a first temperature not less than 500° C. and not more than 900° C. in a first atmosphere including oxygen. The first film includes silicon and oxygen and is deposited on a semiconductor member including silicon carbide. The method can include performing, after the first heat treatment, a second heat treatment of the first film at a second temperature not less than 1200° C. but less than 1400° C. in a second atmosphere including nitrogen.