公开(公告)号：US20170221962A1

公开(公告)日：2017-08-03

申请号：US15500974

申请日：2015-07-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Jumpei TAJIMA ,  Hiroshi ONO ,  Toshihide ITO ,  Kenjiro UESUGI ,  Shinya NUNOUE

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/08 ,  H01L33/22

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/62

Abstract: According to one embodiment, a semiconductor light emitting element (110) includes a metal layer (40), a first to a fourth semiconductor layers (10a, 20a, 10b, 20b), a first and a second light emitting layers (30a, 30b), a first to a sixth electrodes (e1-e6), and a first inter-element interconnect section (12). The first semiconductor layer (10a) includes a first to a third regions (r1-r3). The second semiconductor layer (20a) is provided between the first region (r1) and the metal layer (40) and between the second region (r2) and the metal layer (40). The third semiconductor layer (10b) includes a fourth to a sixth regions (r4-r6). The fourth semiconductor layer (20b) is provided between the fourth region (r4) and the metal layer (40) and between the fifth region (r5) and the metal layer (40). The first inter-element interconnect section (12) is provided between the second electrode (e2) and the metal layer (40) and between the sixth electrode (e6) and the metal layer (40).

公开(公告)号：US20160190393A1

公开(公告)日：2016-06-30

申请号：US14976848

申请日：2015-12-21

Applicant: Kabushiki Kaisha Toshiba

Inventor： Toshihide ITO ,  Shinya NUNOUE

IPC: H01L33/40 ,  H01L33/00

CPC classification number: H01L33/405 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L2933/0016

Abstract: According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type including first and second semiconductor regions, a third semiconductor layer provided between the first and second semiconductor layers, a first electrode layer electrically connected to the first semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer. The second and third semiconductor layers are disposed between the second electrode layer and the first semiconductor layer. The second electrode layer includes a first metal region contacting the first semiconductor region and including silver, a second metal region contacting the second semiconductor region and including silver, and a third metal region contacting the first metal region and including silver. The first metal region is disposed between the third metal region and the first semiconductor region.

Abstract translation: 根据一个实施例，半导体发光元件包括第一导电类型的第一半导体层，包括第一和第二半导体区域的第二导电类型的第二半导体层，设置在第一和第二半导体层之间的第三半导体层， 电连接到第一半导体层的第一电极层和与第二半导体层电连接的第二电极层。 第二和第三半导体层设置在第二电极层和第一半导体层之间。 第二电极层包括与第一半导体区域接触并包括银的第一金属区域，与第二半导体区域接触并包括银的第二金属区域和与第一金属区域接触并包括银的第三金属区域。 第一金属区域设置在第三金属区域和第一半导体区域之间。

公开(公告)号：US20150280061A1

公开(公告)日：2015-10-01

申请号：US14741214

申请日：2015-06-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toshihide ITO ,  Toshiyuki OKA ,  Shinya NUNOUE

IPC: H01L33/16 ,  H01L33/42

CPC classification number: H01L33/40 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L33/42

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second conductive layers, a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting part. The second semiconductor layer is provided between the first conductive layer and the first semiconductor layer. The light emitting part is provided between the first and second semiconductor layers. The second conductive layer is in contact with the second semiconductor layer and the first conductive layer between the second semiconductor layer and the first conductive layer. The first and second conductive layers are transmittable to light emitted from the light emitting part. The first conductive layer includes a polycrystal having a first average grain diameter. The second conductive layer includes a polycrystal having a second average grain diameter of 150 nanometers or less and smaller than the first average grain diameter.

Abstract translation: 根据一个实施例，半导体发光器件包括第一和第二导电层，第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。 第二半导体层设置在第一导电层和第一半导体层之间。 发光部分设置在第一和第二半导体层之间。 第二导电层与第二半导体层和第二导电层在第二半导体层和第一导电层之间接触。 第一和第二导电层可透射从发光部分发射的光。 第一导电层包括具有第一平均晶粒直径的多晶体。 第二导电层包括第二平均粒径为150纳米以下且小于第一平均粒径的多晶体。

公开(公告)号：US20130248921A1

公开(公告)日：2013-09-26

申请号：US13893012

申请日：2013-05-13

Applicant: Kabushiki Kaisha Toshiba

Inventor： Shigeya KIMURA ,  Taisuke SATO ,  Toshihide ITO ,  Toshiyuki OKA ,  Shinya NUNOUE

IPC: H01L33/36

CPC classification number: H01L33/36 ,  H01L33/38

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.

Abstract translation: 根据一个实施例，半导体发光器件包括层叠结构体，第一电极和第二电极。 层叠结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和发光部分。 层叠结构体在第二半导体层的一侧具有第一主表面。 第一电极设置在第一半导体上。 第二电极设置在第二半导体层上。 第一电极包括第一焊盘部分和从第一焊盘部分沿着第一延伸方向延伸的第一延伸部分。 第一延伸部分包括第一宽度增加部分。 第一宽度增加部分沿着与第一延伸方向正交的方向的宽度从第一焊盘部分朝向第一延伸部分的端部增加。

公开(公告)号：US20150214436A1

公开(公告)日：2015-07-30

申请号：US14685165

申请日：2015-04-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toshihide ITO ,  Hiroshi Katsuno ,  Shinya Nunoue

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/0075 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.

Abstract translation: 根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。 第一半导体层是第一导电类型。 发光单元设置在第一半导体层上。 第二半导体层设置在发光单元上并且是第二导电类型。 反射电极设置在第二半导体层上并且包括Ag。 氧化物层设置在反射电极上。 氧化物层是绝缘的并且具有第一开口。 含氧层设置在氧化物层上。 含氮层是绝缘的，并且具有与第一开口连通的第二开口。

公开(公告)号：US20140077248A1

公开(公告)日：2014-03-20

申请号：US13780486

申请日：2013-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Toshihide ITO ,  Hiroshi KATSUNO ,  Shinya NUNOUE

IPC: H01L33/62

CPC classification number: H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.

Abstract translation: 根据一个实施例，半导体器件包括n型的第一半导体层，包括氮化物半导体，第一金属层，含有Al和Au的合金和第二金属层。 第一金属层与第一半导体层相接触。 第二金属层与第一金属层接触。 第二金属层包括不同于Al的金属。 第一金属层设置在第二金属层和第一半导体层之间。

公开(公告)号：US20230387216A1

公开(公告)日：2023-11-30

申请号：US18363214

申请日：2023-08-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Johji NISHIO ,  Chiharu OTA ,  Toshihide ITO

IPC: H01L29/16 ,  C23C16/453 ,  H01L29/20

CPC classification number: H01L29/1608 ,  H01L29/517 ,  H01L29/2003 ,  C23C16/453

Abstract: A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×1021 cm−3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×1018 cm−3, and a carbon concentration at the position is equal to or less than 1×1018 cm−3.

公开(公告)号：US20220416030A1

公开(公告)日：2022-12-29

申请号：US17902074

申请日：2022-09-02

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Johji NISHIO ,  Chiharu OTA ,  Toshihide ITO

IPC: H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  B66B11/04 ,  B60K1/00 ,  B61C17/00 ,  H02P27/06 ,  B61C3/00 ,  B60L53/20

Abstract: This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×1021 cm−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z1/2 in a portion is not more than 1×1011 cm−3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×1018 cm−3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×1018 cm−3.

公开(公告)号：US20160013359A1

公开(公告)日：2016-01-14

申请号：US14863687

申请日：2015-09-24

Applicant: Kabushiki Kaisha Toshiba

Inventor： Toshihide ITO ,  Hiroshi KATSUNO ,  Shinya NUNOUE

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/40

CPC classification number: H01L33/0075 ,  H01L33/0095 ,  H01L33/32 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.

Abstract translation: 根据一个实施例，半导体器件包括n型的第一半导体层，包括氮化物半导体，第一金属层，含有Al和Au的合金和第二金属层。 第一金属层与第一半导体层接触。 第二金属层与第一金属层接触。 第二金属层包括不同于Al的金属。 第一金属层设置在第二金属层和第一半导体层之间。

公开(公告)号：US20160005927A1

公开(公告)日：2016-01-07

申请号：US14693980

申请日：2015-04-23

Applicant: Kabushiki Kaisha Toshiba

Inventor： Kenjiro UESUGI ,  Jumpei TAJIMA ,  Hiroshi ONO ,  Toshihide ITO ,  Shigeya KIMURA ,  Shinya NUNOUE

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/40 ,  H01L33/22

CPC classification number: H01L33/382 ,  H01L33/405 ,  H01L33/44

Abstract: A semiconductor light emitting element includes a metal layer, a first semiconductor layer of a first conductivity type, a light emitting layer, a second semiconductor layer of a second conductivity type, a first electrode, a second electrode, and an insulating layer. The first semiconductor layer is separated from the metal layer in a first direction. The first semiconductor layer includes a first region, a second region, and a third region. The light emitting layer has a first side surface intersecting a second direction. The second semiconductor layer has a second side surface intersecting the second direction. The first electrode is electrically connected to the first region and the metal layer. The second electrode includes a first portion, and a second portion being continuous with the first portion. The insulating layer includes a first insulating portion and a second insulating portion.

Abstract translation: 半导体发光元件包括金属层，第一导电类型的第一半导体层，发光层，第二导电类型的第二半导体层，第一电极，第二电极和绝缘层。 第一半导体层在第一方向与金属层分离。 第一半导体层包括第一区域，第二区域和第三区域。 发光层具有与第二方向相交的第一侧面。 第二半导体层具有与第二方向交叉的第二侧面。 第一电极电连接到第一区域和金属层。 第二电极包括第一部分和与第一部分连续的第二部分。 绝缘层包括第一绝缘部分和第二绝缘部分。