公开(公告)号：US20230064865A1

公开(公告)日：2023-03-02

申请号：US17816772

申请日：2022-08-02

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Shigeto FUKATSU ,  Yukio NAKABAYASHI ,  Tatsuo SHIMIZU ,  Ryosuke IIJIMA

IPC分类号： H01L29/51 ,  H01L29/16 ,  H01L29/78 ,  H01L29/66

摘要： According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include preparing a structure body, the structure body including a silicon carbide member and a first film stacked with the silicon carbide member. The first film includes silicon and oxygen. The method can include performing a first treatment of heat-treating the structure body in a first atmosphere including hydrogen. The method can include, after the first treatment, performing a second treatment of heat-treating the structure body in a second atmosphere including nitrogen and oxygen. An oxygen concentration in the second atmosphere is not less than 5 ppm and not more than 1000 ppm.

公开(公告)号：US20230387216A1

公开(公告)日：2023-11-30

申请号：US18363214

申请日：2023-08-01

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Johji NISHIO ,  Chiharu OTA ,  Toshihide ITO

IPC分类号： H01L29/16 ,  C23C16/453 ,  H01L29/20

CPC分类号： H01L29/1608 ,  H01L29/517 ,  H01L29/2003 ,  C23C16/453

摘要： A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1×1021 cm−3. Nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1×1018 cm−3, and a carbon concentration at the position is equal to or less than 1×1018 cm−3.

公开(公告)号：US20220416030A1

公开(公告)日：2022-12-29

申请号：US17902074

申请日：2022-09-02

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Johji NISHIO ,  Chiharu OTA ,  Toshihide ITO

IPC分类号： H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66 ,  B66B11/04 ,  B60K1/00 ,  B61C17/00 ,  H02P27/06 ,  B61C3/00 ,  B60L53/20

摘要： This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×1021 cm−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z1/2 in a portion is not more than 1×1011 cm−3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×1018 cm−3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×1018 cm−3.

公开(公告)号：US20150084067A1

公开(公告)日：2015-03-26

申请号：US14458584

申请日：2014-08-13

申请人： Kabushiki Kaisha Toshiba

发明人： Ryosuke IIJIMA ,  Yukio NAKABAYASHI ,  Tatsuo SHIMIZU

IPC分类号： H01L29/66 ,  H01L29/36 ,  H01L21/02 ,  H01L29/16

CPC分类号： H01L29/66477 ,  H01L21/02238 ,  H01L21/049 ,  H01L21/28229 ,  H01L21/28255 ,  H01L21/302 ,  H01L21/32105 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/36 ,  H01L29/66053 ,  H01L29/66068 ,  H01L29/66613 ,  H01L29/66621 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

摘要： The semiconductor device of this embodiment includes: a first region of a first conductivity type SiC; a second region of a first conductivity type SiC, impurity concentration of first conductivity type of the second region being lower than impurity concentration of first conductivity type of the first region; a third region of a second conductivity type SiC provided between the first region and the second region; a Si layer provided on surfaces of the first, second, and third regions, a thickness of-the Si layer on the third region being thicker than a thickness of the Si layer on the second region; a gate insulating film provided on the Si layer; and a date electrode provided on the gate insulating film.

摘要翻译： 该实施例的半导体器件包括：第一导电类型SiC的第一区域; 第一导电型SiC的第二区域，第二区域的第一导电类型的杂质浓度低于第一区域的第一导电类型的杂质浓度; 设置在所述第一区域和所述第二区域之间的第二导电型SiC的第三区域; 设置在所述第一，第二和第三区域的表面上的Si层，所述第三区域上的所述Si层的厚度比所述第二区域上的所述Si层的厚度厚; 设置在所述Si层上的栅极绝缘膜; 以及设置在栅极绝缘膜上的日期电极。

公开(公告)号：US20230207321A1

公开(公告)日：2023-06-29

申请号：US18111923

申请日：2023-02-21

申请人： Kabushiki Kaisha Toshiba

发明人： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Johji NISHIO ,  Chiharu OTA ,  Toshihide ITO

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L21/045 ,  H01L21/046 ,  H01L21/049 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02236 ,  H01L21/02271 ,  H01L29/51 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/66068 ,  B60L2210/42 ,  H02P27/06

摘要： A semiconductor device according to an embodiment includes: a silicon carbide layer; a silicon oxide layer; and a region disposed between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration equal to or more than 1 × 1021 cm-3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region have a peak in the region, a nitrogen concentration at a first position 1 nm away from the peak to the side of the silicon oxide layer is equal to or less than 1 × 1018 cm-3 and a carbon concentration at the first position is equal to or less than 1 × 1018 cm-3, and a nitrogen concentration at a second position 1 nm away from the peak to the side of the silicon carbide layer is equal to or less than 1 × 1018 cm-3.

公开(公告)号：US20220005925A1

公开(公告)日：2022-01-06

申请号：US17176525

申请日：2021-02-16

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Johji NISHIO ,  Chiharu OTA ,  Toshihide ITO

IPC分类号： H01L29/10 ,  H01L29/16 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

摘要： This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×1021cm−3. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Z1/2 in a portion is not more than 1×1011cm−3. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×1018cm−3, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×1018cm−3.

公开(公告)号：US20210367040A1

公开(公告)日：2021-11-25

申请号：US17158110

申请日：2021-01-26

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yukio NAKABAYASHI ,  Tatsuo SHIMIZU ,  Toshihide ITO ,  Chiharu OTA ,  Johji NISHIO

IPC分类号： H01L29/16

摘要： According to one embodiment, a semiconductor device includes a silicon carbide member, first, second, and third electrodes, and a first insulating member. The silicon carbide member includes first, second, and third silicon carbide regions. The first silicon carbide region includes first, second, third, and fourth partial regions. The third partial region is between the first and second partial regions. The fourth partial region is between the third partial region and the first electrode. The second silicon carbide region includes first and second semiconductor regions. The third silicon carbide region includes third and fourth semiconductor regions. The first insulating member includes first, second, and third insulating regions. The second electrode is electrically connected to the first silicon carbide region. The third and fourth partial regions are between the second and first electrodes. The third electrode is electrically connected to the second silicon carbide region.

公开(公告)号：US20190296146A1

公开(公告)日：2019-09-26

申请号：US16113304

申请日：2018-08-27

申请人： Kabushiki Kaisha Toshiba

发明人： Tatsuo SHIMIZU ,  Ryosuke IIJIMA ,  Toshihide ITO ,  Shunsuke ASABA ,  Yukio NAKABAYASHI ,  Shigeto FUKATSU

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66 ,  H01L21/04 ,  H01L29/739 ,  B66B11/04

摘要： A semiconductor device of an embodiment includes a silicon carbide layer; a gate electrode; a gate insulating layer disposed between the silicon carbide layer and the gate electrode; a first region disposed in the silicon carbide layer and containing nitrogen (N); and a second region disposed between the first region and the gate insulating layer, and containing at least one element selected from the group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), scandium (Sc), yttrium (Y), lanthanum (La), lanthanoids (Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu), hydrogen (H), deuterium (D), and fluorine (F).

公开(公告)号：US20240072119A1

公开(公告)日：2024-02-29

申请号：US18170156

申请日：2023-02-16

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yukio NAKABAYASHI ,  Tatsuo SHIMIZU ,  Toshihide ITO ,  Chiharu OTA ,  Johji NISHIO

IPC分类号： H01L29/16 ,  H01L29/04 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/1608 ,  H01L29/045 ,  H01L29/66068 ,  H01L29/7802

摘要： According to one embodiment, a semiconductor device includes a silicon carbide member, a first member, a first layer, and a second layer. The silicon carbide member includes a first region. The first member includes silicon and oxygen. The first layer is provided between the first region and the first member. The first layer includes a bond between silicon and nitrogen. The second layer is provided between the first layer and the first member. The second layer includes a bond between silicon and oxygen and a bond between silicon and nitrogen.

公开(公告)号：US20230197790A1

公开(公告)日：2023-06-22

申请号：US17823096

申请日：2022-08-30

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Tatsuo SHIMIZU ,  Yukio NAKABAYASHI ,  Toshihide ITO ,  Chiharu OTA ,  Johji NISHIO

IPC分类号： H01L29/16 ,  H01L29/08 ,  H02P27/06 ,  H01L29/10

CPC分类号： H01L29/1608 ,  H01L29/0878 ,  H02P27/06 ,  H01L29/1095

摘要： A method for manufacturing a semiconductor device of an embodiment includes performing first ion implantation of implanting aluminum (Al) into a silicon carbide layer in a first projected range and a first dose amount, performing second ion implantation of implanting carbon (C) into the silicon carbide layer in a second projected range and a second dose amount which is a dose amount equal to or more than 10 times the first dose amount, performing a first heat treatment of 1600° C. or more, performing an oxidation treatment of oxidizing the silicon carbide layer, performing an etching process of etching the silicon carbide layer in an atmosphere containing a hydrogen gas, forming a silicon oxide film on the silicon carbide layer, and forming a gate electrode on the silicon oxide film.