发明申请
- 专利标题： MAGNETORESISTIVE EFFECT ELEMENT
- 专利标题（中）： 磁感应效应元件
-
申请号： US13777643申请日： 2013-02-26
-
公开(公告)号： US20140070343A1公开(公告)日： 2014-03-13
- 发明人: Shigeto FUKATSU , Tatsuya KISHI , Masahiko NAKAYAMA , Akiyuki MURAYAMA
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JP2012-197826 20120907
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/12
摘要：
A magnetoresistive effect element in one or more embodiments of the present invention is provided with a memory layer with a variable magnetization direction having a magnetic anisotropy in a direction perpendicular to a film surface, a reference layer with an invariable magnetization direction having the magnetic anisotropy in a direction perpendicular to the film surface, and a tunnel barrier layer formed between the memory layer and the reference layer. The tunnel barrier layer has a first portion at the central part in the film surface and a second portion at a peripheral part. The second portion contains at least boron and oxygen.
公开/授权文献
- US09196822B2 Magnetoresistive effect element 公开/授权日：2015-11-24
信息查询
IPC分类:
