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    LIGHTING APPARATUS OF ADJUSTABLE COLOR TEMPERATURE AND A METHOD FOR ADJUSTING COLOR TEMPERATURE THEREOF
    2.
    发明申请
    LIGHTING APPARATUS OF ADJUSTABLE COLOR TEMPERATURE AND A METHOD FOR ADJUSTING COLOR TEMPERATURE THEREOF 有权
    可调节颜色温度的照明设备和调节其色温的方法

    公开(公告)号：US20160381761A1

    公开(公告)日：2016-12-29

    申请号：US14956413

    申请日：2015-12-02

    Applicant: Industrial Technology Research Institute

    Inventor： Pei-Ling Tseng ,  Tsai-Kan Chien ,  Sue-Chen Liao

    IPC: H05B33/08 ,  H05B37/02

    CPC classification number: H05B33/0896 ,  H05B33/083 ,  H05B33/0863 ,  H05B33/0869 ,  H05B37/0218 ,  H05B37/0227 ,  Y02B20/46

    Abstract: A lighting apparatus of adjustable color temperature including a luminescent source, a controller and a detector is proposed. The luminescent source is configured to provide an illumination source. The controller is coupled to the luminescent source. The controller is configured to adjust a color temperature of the illumination source according to at least one of global and local color temperatures. The detector is coupled to the controller. The detector is configured to detect a color temperature of a location of the lighting apparatus of adjustable color temperature, so as to provide the local color temperature to the controller. The controller performs a weighting operation for the global and local color temperatures to obtain an operation result for adjusting the color temperature of the illumination source. A method for adjusting color temperature of a lighting apparatus of adjustable color temperature is also proposed.

    Abstract translation: 提出了包括发光源，控制器和检测器的可调色温的照明装置。 发光源被配置为提供照明源。 控制器耦合到发光源。 控制器被配置为根据全局和局部色温中的至少一个来调节照明源的色温。 检测器耦合到控制器。 检测器被配置为检测可调色温的照明装置的位置的色温，以便向控制器提供局部色温。 控制器执行全局和局部色温的加权操作，以获得调节照明源的色温的操作结果。 还提出了一种用于调节可调色温的照明装置的色温的方法。

    THROUGH SILICON VIA BIDIRECTIONAL REPAIR CIRCUIT OF SEMICONDUCTOR APPARATUS
    3.
    发明申请
    THROUGH SILICON VIA BIDIRECTIONAL REPAIR CIRCUIT OF SEMICONDUCTOR APPARATUS 有权
    通过半导体装置的双向维修电路通过硅

    公开(公告)号：US20140185174A1

    公开(公告)日：2014-07-03

    申请号：US13900546

    申请日：2013-05-23

    Applicant: Industrial Technology Research Institute

    Inventor： Pei-Ling Tseng ,  Keng-Li Su

    IPC: H02H3/20

    CPC classification number: H02H3/20 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2924/0002 ,  H03K19/018521 ,  H01L2924/00 ,  H01L2924/00011

    Abstract: A TSV bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules. The first and the second bidirectional switches determine whether to transmit an input signal of a first chip or a second chip to each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether short-circuit on the corresponding TSV and a silicon substrate is present according to the input signal and the corresponding TSV to produce a short-circuit detection output signal.

    Abstract translation: 提供半导体装置的TSV双向修复电路。 双向修复电路包括第一和第二双向开关和至少两个传输路径模块。 第一和第二双向开关根据开关信号确定是否向每个传输路径模块发送第一芯片或第二芯片的输入信号。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路根据输入信号和对应的TSV检测是否存在对应的TSV和硅衬底的短路以产生短路检测输出信号。

    Through silicon via repair circuit
    5.
    发明授权
    Through silicon via repair circuit 有权
    通过硅经修复电路

    公开(公告)号：US09136250B2

    公开(公告)日：2015-09-15

    申请号：US13902988

    申请日：2013-05-28

    Applicant: Industrial Technology Research Institute

    Inventor： Pei-Ling Tseng ,  Keng-Li Su

    IPC: H03K19/003 ,  H01L25/065

    CPC classification number: H01L25/0657 ,  H01L2225/06544 ,  H01L2225/06596 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A through silicon via (TSV) repair circuit is provided. The TSV repair circuit includes at least two transmission control switches and at least two transmission path modules. Two transmission control switches transmit an input signal of a first chip or a second chip to one of two terminals in each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether to detect whether short-circuit on the TSV and a silicon substrate is present and generate a short-circuit detection output signal. The leakage current cancellation circuit to avoid a leakage current generated by a first level voltage to flow into the silicon substrate according to the short-circuit detection output signal.

    Abstract translation: 提供了硅通孔（TSV）修复电路。 TSV修复电路包括至少两个传输控制开关和至少两个传输路径模块。 两个传输控制开关根据开关信号将第一芯片或第二芯片的输入信号发送到每个传输路径模块中的两个终端中的一个终端。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路检测是否检测出TSV上的短路和硅衬底是否存在，并产生短路检测输出信号。 泄漏电流消除电路，以避免由第一电平电压产生的漏电流根据短路检测输出信号流入硅衬底。

    Through silicon via bidirectional repair circuit of semiconductor apparatus
    6.
    发明授权
    Through silicon via bidirectional repair circuit of semiconductor apparatus 有权
    通过半导体器件的双向修复电路

    公开(公告)号：US09059586B2

    公开(公告)日：2015-06-16

    申请号：US13900546

    申请日：2013-05-23

    Applicant: Industrial Technology Research Institute

    Inventor： Pei-Ling Tseng ,  Keng-Li Su

    IPC: H02H3/00 ,  H02H3/20

    CPC classification number: H02H3/20 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2924/0002 ,  H03K19/018521 ,  H01L2924/00 ,  H01L2924/00011

    Abstract: A TSV bidirectional repair circuit of a semiconductor apparatus is provided. The bidirectional repair circuit includes a first and a second bidirectional switches and at least two transmission path modules. The first and the second bidirectional switches determine whether to transmit an input signal of a first chip or a second chip to each of the transmission path modules according to a switch signal. Each transmission path module includes at least two data path circuits and corresponding TSVs. Each data path circuit includes an input driving circuit, a short-circuit detection circuit and a leakage current cancellation circuit. The short-circuit detection circuit detects whether short-circuit on the corresponding TSV and a silicon substrate is present according to the input signal and the corresponding TSV to produce a short-circuit detection output signal.

    Abstract translation: 提供半导体装置的TSV双向修复电路。 双向修复电路包括第一和第二双向开关和至少两个传输路径模块。 第一和第二双向开关根据开关信号确定是否向每个传输路径模块发送第一芯片或第二芯片的输入信号。 每个传输路径模块包括至少两个数据路径电路和相应的TSV。 每个数据路径电路包括输入驱动电路，短路检测电路和泄漏电流消除电路。 短路检测电路根据输入信号和对应的TSV检测是否存在对应的TSV和硅衬底的短路以产生短路检测输出信号。

    THROUGH SILICON VIA REPAIR CIRCUIT OF SEMICONDUCTOR APPARATUS
    7.
    发明申请
    THROUGH SILICON VIA REPAIR CIRCUIT OF SEMICONDUCTOR APPARATUS 有权
    通过半导体装置的修复电路的硅

    公开(公告)号：US20140145753A1

    公开(公告)日：2014-05-29

    申请号：US13867122

    申请日：2013-04-21

    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    Inventor： Pei-Ling Tseng ,  Keng-Li Su

    IPC: H03K19/003

    CPC classification number: H03K19/003 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A through silicon via (TSV) repair circuit of a semiconductor apparatus is provided. The TSV repair circuit includes a first chip, at least one second chip, at least two TSVs, at least two data path circuits, and an output logic circuit. Each data path circuit includes an input driving circuit, a short-circuit detection circuit, a bias circuit, and a leakage current cancellation circuit. The input driving circuit transforms an input signal into a pending signal and transmits the pending signal to a first terminal of the corresponding TSV. The short-circuit detection circuit detects a short circuit between the corresponding TSV and a silicon substrate according to the input signal and the first terminal of the TSV and generates a short-circuit detection output signal. The leakage current cancellation circuit prevents a leakage current produced by a first level voltage from entering the silicon substrate according to the short-circuit detection output signal.

    Abstract translation: 提供半导体装置的硅通孔（TSV）修复电路。 TSV修复电路包括第一芯片，至少一个第二芯片，至少两个TSV，至少两个数据路径电路和输出逻辑电路。 每个数据路径电路包括输入驱动电路，短路检测电路，偏置电路和泄漏电流消除电路。 输入驱动电路将输入信号变换为未决信号，并将未决信号发送到相应TSV的第一终端。 短路检测电路根据输入信号和TSV的第一端检测相应的TSV与硅衬底之间的短路，并产生短路检测输出信号。 泄漏电流消除电路防止由第一电平电压产生的漏电流根据短路检测输出信号进入硅衬底。

    RESISTIVE MEMORY SYSTEM, DRIVER CIRCUIT THEREOF AND METHOD FOR SETTING RESISTANCE THEREOF
    8.
    发明申请
    RESISTIVE MEMORY SYSTEM, DRIVER CIRCUIT THEREOF AND METHOD FOR SETTING RESISTANCE THEREOF 有权
    电阻记忆系统及其驱动电路及其电阻设定方法

    公开(公告)号：US20160118120A1

    公开(公告)日：2016-04-28

    申请号：US14749651

    申请日：2015-06-25

    Applicant: Industrial Technology Research Institute

    Inventor： Pei-Ling Tseng ,  Chia-Chen Kuo ,  Shyh-Shyuan Sheu ,  Meng-Fan Chang

    IPC: G11C13/00

    CPC classification number: G11C13/0097 ,  G11C13/0023 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2213/79

    Abstract: A resistive memory system, a driver circuit thereof and a method for setting resistances thereof are provided. The resistive memory system includes a memory array, a row selection circuit, a first control circuit and a second control circuit. The memory array has a plurality of resistive memory cells. The row selection circuit is used for activating the resistive memory cells. The first control circuit and the second control circuit are coupled to the resistive memory cells. When each of resistive memory cells is set, the first control circuit and the second control circuit respectively provide a set voltage and a ground voltage to the each of resistive memory cells to form a set current, and the set current is clamped by at least one of the first control circuit and the second control circuit.

    Abstract translation: 提供了一种电阻式存储器系统，其驱动电路及其电阻设定方法。 电阻式存储器系统包括存储器阵列，行选择电路，第一控制电路和第二控制电路。 存储器阵列具有多个电阻存储单元。 行选择电路用于激活电阻式存储单元。 第一控制电路和第二控制电路耦合到电阻存储器单元。 当每个电阻性存储器单元被设置时，第一控制电路和第二控制电路分别向每个电阻存储器单元提供一个设定电压和一个接地电压以形成一个设定电流，并且将该设定电流钳位在至少一个 的第一控制电路和第二控制电路。

    Through silicon via repair circuit of semiconductor device
    9.
    发明授权
    Through silicon via repair circuit of semiconductor device 有权
    通过半导体器件的硅经修复电路

    公开(公告)号：US09136843B2

    公开(公告)日：2015-09-15

    申请号：US14447531

    申请日：2014-07-30

    Applicant: Industrial Technology Research Institute

    Inventor： Pei-Ling Tseng ,  Keng-Li Su ,  Chih-Sheng Lin ,  Shyh-Shyuan Sheu

    IPC: H03K19/00 ,  H03K19/003 ,  G01R31/28 ,  H01L21/66

    CPC classification number: H03K19/003 ,  G01R31/28 ,  H01L22/22 ,  H01L23/481 ,  H01L25/0657 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/0002 ,  H03K19/0008 ,  H01L2924/00

    Abstract: TSV repair circuit of a semiconductor device includes a first chip, a second chip, at least two TSV, at least two data path circuits and an output logic circuit. Each data path circuit comprises an input driving circuit, a TSV detection circuit, a memory device, a protection circuit and a power control circuit. The TSV detection circuit detects a TSV status, the memory device keeps the TSV status, the protection circuit determines whether to pull a first end of the TSV to a ground voltage according to the TSV status, and the power control circuit prevents a leakage current of a power voltage from flowing through a substrate.

    Abstract translation: 半导体器件的TSV修复电路包括第一芯片，第二芯片，至少两个TSV，至少两个数据路径电路和输出逻辑电路。 每个数据路径电路包括输入驱动电路，TSV检测电路，存储器件，保护电路和功率控制电路。 TSV检测电路检测TSV状态，存储器件保持TSV状态，保护电路根据TSV状态确定是否将TSV的第一端拉至接地电压，并且功率控制电路防止漏电流 来自基板的电源电压。

    DRIVING POWER GENERATING CIRCUIT AND A METHOD FOR GENERATING A DRIVING POWER
    10.
    发明申请
    DRIVING POWER GENERATING CIRCUIT AND A METHOD FOR GENERATING A DRIVING POWER 有权
    驱动发电电路和产生驱动力的方法

    公开(公告)号：US20170070133A1

    公开(公告)日：2017-03-09

    申请号：US14944243

    申请日：2015-11-18

    Applicant: Industrial Technology Research Institute

    Inventor： Chih-Ping Cheng ,  Pei-Ling Tseng ,  Szu-Chieh Liu ,  Sue-Chen Liao

    IPC: H02M1/32 ,  H05B33/08

    CPC classification number: H02M1/32 ,  H02M3/156 ,  H02M2001/327 ,  H03K17/0822 ,  H03K17/18 ,  H05B33/0818 ,  H05B33/089

    Abstract: A driving power generating circuit configured to generate a driving power to drive a load is provided. The driving power generating circuit includes a signal generating circuit, a power converter circuit, and a sampling control circuit. The signal generating circuit is configured to output a control signal according to a feedback signal and a lock signal. The power converter circuit is electrically connected to the signal generating circuit. The power converter circuit is configured to generate the driving power according to the control signal, so as to drive the load. The sampling control circuit is electrically connected to the signal generating circuit. The sampling control circuit is configured to sample the control signal and output the lock signal according to a sampling result. A method for generating a driving power is also provided.

    Abstract translation: 提供了一种被配置为产生用于驱动负载的驱动力的驱动发电电路。 驱动电力产生电路包括信号发生电路，功率转换电路和采样控制电路。 信号发生电路被配置为根据反馈信号和锁定信号输出控制信号。 电力转换器电路电连接到信号发生电路。 功率转换器电路被配置为根据控制信号产生驱动电力，以驱动负载。 采样控制电路电连接到信号发生电路。 采样控制电路被配置为根据采样结果对控制信号进行采样并输出锁定信号。 还提供了一种产生驱动力的方法。

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