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公开(公告)号：US09330965B2
公开(公告)日：2016-05-03
申请号：US14837827
申请日：2015-08-27
发明人： Hsueh-Chung Chen , Yongan Xu , Yunpeng Yin , Ailian Zhao
IPC分类号： H01L21/768 , H01L21/033 , H01L21/311
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L21/76897 , H01L21/76898
摘要： A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.
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公开(公告)号：US09219007B2
公开(公告)日：2015-12-22
申请号：US13913823
申请日：2013-06-10
发明人： Hsueh-Chung Chen , Yongan Xu , Yunpeng Yin , Ailian Zhao
IPC分类号： H01L21/768 , H01L21/033 , H01L21/311
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L21/76897 , H01L21/76898
摘要： A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.
摘要翻译： 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。
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公开(公告)号：US09257334B2
公开(公告)日：2016-02-09
申请号：US14837865
申请日：2015-08-27
发明人： Hsueh-Chung Chen , Yongan Xu , Yunpeng Yin , Ailian Zhao
IPC分类号： H01L21/4763 , H01L21/768 , H01L21/033 , H01L21/311
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L21/76897 , H01L21/76898
摘要： A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.
摘要翻译： 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。
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公开(公告)号：US20140363969A1
公开(公告)日：2014-12-11
申请号：US13913823
申请日：2013-06-10
发明人： Hsueh-Chung Chen , Yongan Xu , Yunpeng Yin , Ailian Zhao
IPC分类号： H01L21/768
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L21/76897 , H01L21/76898
摘要： A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.
摘要翻译： 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔打开通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。
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公开(公告)号：US20150371896A1
公开(公告)日：2015-12-24
申请号：US14837827
申请日：2015-08-27
发明人： Hsueh-Chung Chen , Yongan Xu , Yunpeng Yin , Ailian Zhao
IPC分类号： H01L21/768
CPC分类号： H01L21/76802 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/76811 , H01L21/76816 , H01L21/76897 , H01L21/76898
摘要： A method including forming a penta-layer hardmask above a substrate, the penta-layer hardmask comprising a first hardmask layer above a second hardmask layer; forming a trench pattern in the first hardmask layer; transferring a first via bar pattern from a first photo-resist layer above the penta-layer hardmask into the second hardmask layer resulting in a first via pattern, the first via pattern in the second hardmask layer overlapping the trench pattern and being self-aligned on two sides by the trench pattern in the first hardmask layer; and transferring the first via pattern from the second hardmask layer into the substrate resulting in a self-aligned via opening, the self-aligned via opening being self-aligned on all sides by the first via pattern in the second hardmask layer.
摘要翻译： 一种包括在衬底上形成五层硬掩模的方法，所述五层硬掩模包括在第二硬掩模层上方的第一硬掩模层; 在第一硬掩模层中形成沟槽图案; 将第一通孔条图案从五层硬掩模上方的第一光致抗蚀剂层转移到第二硬掩模层中，产生第一通孔图案，第二硬掩模层中的第一通孔图案与沟槽图案重叠并且在 双面通过第一个硬掩模层中的沟槽图案; 以及将所述第一通孔图案从所述第二硬掩模层转移到所述衬底中，从而产生自对准的通孔，所述自对准通孔开口通过所述第二硬掩模层中的所述第一通孔图案在所有侧面上自对准。
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公开(公告)号：US20190206864A1
公开(公告)日：2019-07-04
申请号：US16272844
申请日：2019-02-11
发明人： Hong He , Siva Kanakasabapathy , Yunpeng Yin , Chiahsun Tseng , Junli Wang
IPC分类号： H01L27/088 , H01L21/265 , H01L21/8234
CPC分类号： H01L27/0886 , H01L21/26513 , H01L21/26586 , H01L21/3065 , H01L21/3086 , H01L21/823431 , H01L21/823481 , H01L29/66795
摘要： A process for etching a bulk integrated circuit substrate to form features on the substrate, such as fins, having substantially vertical walls comprises forming an etch stop layer beneath the surface of the substrate by ion implantation, e.g., carbon, oxygen, or boron ions or combinations thereof, masking the surface with a patterned etching mask that defines the features by openings in the mask to produce a masked substrate and etching the masked substrate to a level of the etch stop layer to form the features. In silicon substrates, ion implantation takes place along a silicon crystalline lattice beneath the surface of the substrate. The etchant comprises a halogen material that etches undoped silicon faster than the implants-rich silicon layer. This produces a circuit where the fins do not taper away from the vertical where they meet the substrate, and corresponding products and articles of manufacture having these features.
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公开(公告)号：US10170327B2
公开(公告)日：2019-01-01
申请号：US15613774
申请日：2017-06-05
发明人： Hong He , Chiahsun Tseng , Chun-Chen Yeh , Yunpeng Yin
IPC分类号： H01L21/00 , H01L21/308 , H01L29/66 , H01L21/033 , H01L21/3065 , H01L21/3213
摘要： Methods and structures for fabricating fins for multigate devices are disclosed. In accordance with one method, a plurality of sidewalls are formed in or on a plurality of mandrels over a semiconductor substrate such that each of the mandrels includes a first sidewall composed of a first material and a second sidewall composed of a second material that is different from the first material. The first sidewall of a first mandrel of the plurality of mandrels is selectively removed. In addition, a pattern composed of remaining sidewalls of the plurality of sidewalls is transferred onto an underlying layer to form a hard mask in the underlying layer. Further, the fins are formed by employing the hard mask and etching semiconducting material in the substrate.
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公开(公告)号：US20180223522A1
公开(公告)日：2018-08-09
申请号：US15907812
申请日：2018-02-28
发明人： Hsueh-Chung H. Chen , Hong He , Juntao Li , Chih-Chao Yang , Yunpeng Yin
CPC分类号： F24S30/452 , E04B1/34357 , E04B1/346 , E04B7/163 , F24S20/61 , F24S2030/18 , H01L21/31144 , H01L21/76805 , H01L21/76807 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76832 , H01L21/76834 , H01L21/7684 , H01L21/76879 , H01L21/76883 , H01L21/76897 , H01L23/5226 , H01L23/53238 , Y02A30/22 , Y02B10/20 , Y02E10/47
摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.
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公开(公告)号：US09953916B2
公开(公告)日：2018-04-24
申请号：US15423923
申请日：2017-02-03
发明人： Hsueh-Chung H. Chen , Hong He , Juntao Li , Chih-Chao Yang , Yunpeng Yin
IPC分类号： H01L23/522 , H01L21/768 , H01L23/532
CPC分类号： F24S30/452 , E04B1/34357 , E04B1/346 , E04B7/163 , F24S20/61 , F24S2030/18 , H01L21/31144 , H01L21/76805 , H01L21/76807 , H01L21/76811 , H01L21/76813 , H01L21/76816 , H01L21/76832 , H01L21/76834 , H01L21/7684 , H01L21/76879 , H01L21/76883 , H01L21/76897 , H01L23/5226 , H01L23/53238 , Y02A30/22 , Y02B10/20 , Y02E10/47
摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.
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公开(公告)号：US20170194463A1
公开(公告)日：2017-07-06
申请号：US15464495
申请日：2017-03-21
发明人： Kangguo Cheng , Bruce B. Doris , Hong He , Ali Khakifirooz , Yunpeng Yin
IPC分类号： H01L29/66 , H01L21/306 , H01L21/8234 , H01L29/78 , H01L21/02 , H01L21/324 , H01L21/225 , H01L29/06
CPC分类号： H01L29/66795 , H01L21/02532 , H01L21/2254 , H01L21/30604 , H01L21/324 , H01L21/823431 , H01L29/0649 , H01L29/66545 , H01L29/785 , H01L29/7851
摘要： A method of forming a semiconductor device that includes forming a silicon including fin structure and forming a germanium including layer on the silicon including fin structure. Germanium is then diffused from the germanium including layer into the silicon including fin structure to convert the silicon including fin structure to silicon germanium including fin structure.
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