公开(公告)号：US10168075B2

公开(公告)日：2019-01-01

申请号：US15907812

申请日：2018-02-28

申请人： International Business Machines Corporation

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： H01L21/311 ,  F24S30/452 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  F24S20/61 ,  E04B1/343 ,  E04B1/346 ,  E04B7/16 ,  F24S30/00

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

公开(公告)号：US20170148730A1

公开(公告)日：2017-05-25

申请号：US15423923

申请日：2017-02-03

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC分类号： F24S30/452 ,  E04B1/34357 ,  E04B1/346 ,  E04B7/163 ,  F24S20/61 ,  F24S2030/18 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  Y02A30/22 ,  Y02B10/20 ,  Y02E10/47

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

公开(公告)号：US09595473B2

公开(公告)日：2017-03-14

申请号：US14727132

申请日：2015-06-01

申请人： International Business Machines Corporation

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： F24S30/452 ,  E04B1/34357 ,  E04B1/346 ,  E04B7/163 ,  F24S20/61 ,  F24S2030/18 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  Y02A30/22 ,  Y02B10/20 ,  Y02E10/47

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

摘要翻译： 制造自对准通孔结构的方法包括在下金属布线层上的ILD层上形成三层掩模，所述三层掩模包括第一绝缘层和第二绝缘层以及绝缘层之间的金属层; 通过所述第一绝缘层和金属层限定沟槽图案，所述沟槽图案具有第一宽度; 在所述沟槽图案上的光刻掩模中限定第一通孔图案，所述第一通孔图案具有大于所述第一宽度的第二宽度; 在沟槽图案的暴露的侧壁上生长金属覆盖层，以将第一宽度减小到限定第二通孔图案的第三宽度; 将沟槽图案转移到ILD层中以形成沟槽; 并且将第二通孔图案通过ILD层转移到金属布线层中以形成通孔。

公开(公告)号：US20180223522A1

公开(公告)日：2018-08-09

申请号：US15907812

申请日：2018-02-28

申请人： International Business Machines Corporation

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： E04B1/344 ,  E04B1/346 ,  E04B7/16 ,  E04B1/343

CPC分类号： F24S30/452 ,  E04B1/34357 ,  E04B1/346 ,  E04B7/163 ,  F24S20/61 ,  F24S2030/18 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  Y02A30/22 ,  Y02B10/20 ,  Y02E10/47

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

公开(公告)号：US09953916B2

公开(公告)日：2018-04-24

申请号：US15423923

申请日：2017-02-03

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： H01L23/522 ,  H01L21/768 ,  H01L23/532

CPC分类号： F24S30/452 ,  E04B1/34357 ,  E04B1/346 ,  E04B7/163 ,  F24S20/61 ,  F24S2030/18 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  Y02A30/22 ,  Y02B10/20 ,  Y02E10/47

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

公开(公告)号：US20160351447A1

公开(公告)日：2016-12-01

申请号：US14727132

申请日：2015-06-01

申请人： International Business Machines Corporation

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC分类号： F24S30/452 ,  E04B1/34357 ,  E04B1/346 ,  E04B7/163 ,  F24S20/61 ,  F24S2030/18 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  Y02A30/22 ,  Y02B10/20 ,  Y02E10/47

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

摘要翻译： 制造自对准通孔结构的方法包括在下金属布线层上的ILD层上形成三层掩模，所述三层掩模包括第一绝缘层和第二绝缘层以及绝缘层之间的金属层; 通过所述第一绝缘层和金属层限定沟槽图案，所述沟槽图案具有第一宽度; 在所述沟槽图案上的光刻掩模中限定第一通孔图案，所述第一通孔图案具有大于所述第一宽度的第二宽度; 在沟槽图案的暴露的侧壁上生长金属覆盖层，以将第一宽度减小到限定第二通孔图案的第三宽度; 将沟槽图案转移到ILD层中以形成沟槽; 并且将第二通孔图案通过ILD层转移到金属布线层中以形成通孔。

公开(公告)号：US09716038B2

公开(公告)日：2017-07-25

申请号：US15086440

申请日：2016-03-31

申请人： International Business Machines Corporation

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： F24S30/452 ,  E04B1/34357 ,  E04B1/346 ,  E04B7/163 ,  F24S20/61 ,  F24S2030/18 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  Y02A30/22 ,  Y02B10/20 ,  Y02E10/47

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

公开(公告)号：US20160351448A1

公开(公告)日：2016-12-01

申请号：US15086440

申请日：2016-03-31

申请人： International Business Machines Corporation

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Juntao Li ,  Chih-Chao Yang ,  Yunpeng Yin

IPC分类号： H01L21/768

CPC分类号： F24S30/452 ,  E04B1/34357 ,  E04B1/346 ,  E04B7/163 ,  F24S20/61 ,  F24S2030/18 ,  H01L21/31144 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76879 ,  H01L21/76883 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/53238 ,  Y02A30/22 ,  Y02B10/20 ,  Y02E10/47

摘要： A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask includes first and second insulating layers and a metal layer in between the insulating layers; defining a trench pattern through the first insulating layer and metal layer, the trench pattern having a first width; defining a first via pattern in a lithographic mask over the trench pattern, the first via pattern having a second width that is larger than the first width; growing a metal capping layer on an exposed sidewall of the trench pattern to decrease the first width to a third width that defines a second via pattern; transferring the trench pattern into the ILD layer to form a trench; and transferring the second via pattern through the ILD layer and into the metal wiring layer to form a via.

公开(公告)号：US08859384B1

公开(公告)日：2014-10-14

申请号：US13957022

申请日：2013-08-01

申请人： International Business Machines Corporation

发明人： Hsueh-Chung H. Chen ,  Hong He ,  Chiahsun Tseng ,  Chun-Chen Yeh ,  Yunpeng Yin

IPC分类号： H01L21/20 ,  H01L49/02

CPC分类号： H01L28/10

摘要： Methods for forming inductors. The methods include forming sidewalls around a mandrel over a conductor layer; removing material from the conductor layer around a region defined by the sidewalls; removing the mandrel; partially etching the conductor layer in a region between the sidewalls; etching the partially etched conductor layer to form separate metal segments; depositing a dielectric material in and around the metal segments; and forming conductive lines between exposed contacts of adjacent metal segments.

摘要翻译： 电感器形成方法。 所述方法包括在导体层上形成围绕心轴的侧壁; 在由侧壁限定的区域周围从导体层去除材料; 去除心轴; 在侧壁之间的区域中部分地蚀刻导体层; 蚀刻部分蚀刻的导体层以形成分离的金属段; 在金属片段内和周围沉积电介质材料; 以及在相邻金属段的暴露的触点之间形成导电线。