摘要:
The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
摘要:
A method for fabricating a nonvolatile memory device includes forming a stacked structure having a plurality of interlayer dielectric layers and a plurality of sacrificial layers wherein interlayer dielectric layers and sacrificial layers are alternately stacked over a substrate, forming a first hole exposing a part of the substrate by selectively etching the stacked structure, forming a first insulation layer in the first hole, forming a second hole exposing the part of the substrate by selectively etching the first insulation layer, and forming a channel layer in the second hole.
摘要:
A nonvolatile memory device includes a plurality of channel structures formed over a substrate and including a plurality of interlayer dielectric layers alternately stacked with a plurality of channel layers; first and second vertical gates alternately disposed between the channel structures along one direction crossing with the channel structure and adjoining the plurality of channel layers with a memory layer interposed therebetween; and a pair of first and second word lines disposed over or under the channel structures and extending along the one direction in such a way as to overlap with the first and second vertical gates. The first word line is connected with the first vertical gates and the second word line is connected with the second vertical gates.
摘要:
A three-dimensional (3-D) non-volatile memory device includes channel structures each including channel layers stacked over a substrate and extending in a first direction, wherein the channel layers include well regions, respectively, vertical gates located and spaced from each other between the channel structures, and a well pick-up line contacting on the well regions of the channel layers and extending in a second direction crossing the channel structures.
摘要:
A method of preparing transparent or nontransparent silica aerogel granules. The method includes forming a granular wet gel by spraying a silica sol into alcohol, the silica sol being prepared by mixing a water glass solution or an opacifier-containing water glass solution with an inorganic acid solution, forming a granular alcohol gel through gelation aging and solvent substitution of the granular wet gel in alcohol, hydrophobically modifying the surface of the granular alcohol gel using an organic silane compound, and drying the surface modified gel at ambient pressure or in a vacuum. The method may prepare silica aerogel granules in a short period of time through heat treatment at a relatively low temperature and at ambient pressure or in a vacuum, thereby ensuring excellent economic feasibility, continuity and reliability, suited for mass production.
摘要:
The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
摘要:
The present disclosure provides a method and apparatus for manufacturing a silicon substrate using inert gas blowing during continuous casting to provide excellent productivity and surface quality. The apparatus includes a raw silicon feeder through which raw silicon is fed, a silicon melting unit disposed under the raw silicon feeder and melting the raw silicon to form molten silicon, a molten silicon storage unit storing the molten silicon supplied from the silicon melting unit and tapping the molten silicon to provide a silicon melt having a constant thickness, a transfer unit transferring the silicon melt tapped from the molten silicon storage unit, and a cooling unit cooling the silicon melt transferred by the transfer unit. Here, the cooling unit cools the silicon melt by blowing inert gas at a rate of 0.1˜2.5 Nm3/h.
摘要:
Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.
摘要:
A polarizer integrated with a transparent conductive film for a liquid crystal display includes a lower film an optical film and a transparent conductive film. A touch panel integrated with the polarizer is formed by attaching an upper sheet to the upper surface of the polarizer integrated with a transparent conductive film. A flat panel display with an integral type touch panel includes a touch panel integrated with the flat panel display having a lower polarizer, a liquid crystal display and an upper polarizer.
摘要:
An improved touch panel with polarizer, a flat panel display with touch panel, and a laminating method. The improvement having an adhesive layer, provided on an upper base of the polarizer in order to manufacture a laminate structure; or dot spacers formed between transparent conductive films are formed so that substrates can be laminated to each other. The touch panel with polarizer includes: dot spacers between transparent conductive films so that substrates can be laminated to each other; the polarizer bonded to a lower sheet has an adhesive layer bonded to the touch panel causing the polarizer to be integrated with the panel, and another adhesive layer causing the polarizer to be bonded to the liquid crystal display; and the other polarizer is bonded to the liquid crystal display. A touch panel is bonded together, and a polarizer is bonded to the panel, and the liquid crystal display is bonded to an adhesive layer on the polarizer. Lightness and thinness of the touch panel with the polarizer, and the flat panel display with the touch panel is obtained. Also, loss of light transmissivity is reduced, and defects resulting from deformation of the touch panel is removed. High yield and reliability can be obtained in the laminating method.