公开(公告)号：US20110142572A1

公开(公告)日：2011-06-16

申请号：US12965791

申请日：2010-12-10

申请人： Wendell Thomas BLONIGAN ,  Masato Toshima ,  Kam S. Law ,  David Eric Berkstresser ,  Steve Kleinke ,  Craig Lyle Stevens

发明人： Wendell Thomas BLONIGAN ,  Masato Toshima ,  Kam S. Law ,  David Eric Berkstresser ,  Steve Kleinke ,  Craig Lyle Stevens

IPC分类号： H01L21/677 ,  H05B6/64

CPC分类号： H01L21/67745 ,  C23C16/45565 ,  G06T7/0004 ,  H01J37/32733 ,  H01L21/67173 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67754 ,  Y10T29/49948

摘要： An apparatus and method for concurrent processing of several substrates. The system employs a novel architecture which, while being linear, may autonomously sequence processing and move substrates in different directions as necessary. The system moves several substrates concurrently; however, unlike the prior art it does not utilize trays.

摘要翻译： 一种并行处理多个基板的装置和方法。 该系统采用一种新颖的架构，其在线性的情况下可以根据需要自主地对处理进行顺序处理和移动基板。 系统同时移动多个基板; 然而，与现有技术不同，它不利用托盘。

公开(公告)号：US20110088847A1

公开(公告)日：2011-04-21

申请号：US12906053

申请日：2010-10-15

申请人： Kam S. LAW ,  Masato Toshima ,  Wendell Thomas Blonigan ,  Linh Can ,  Robin K. F. Law

发明人： Kam S. LAW ,  Masato Toshima ,  Wendell Thomas Blonigan ,  Linh Can ,  Robin K. F. Law

IPC分类号： C23F1/08 ,  C23C16/00 ,  C23C16/455 ,  B23B35/00

CPC分类号： H01J37/32449 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/3244

摘要： A showerhead for a plasma process apparatus for processing substrates, comprising a showerhead body comprising a top plate and a bottom plate defining a cavity in between; a gas inlet formed in the top plate; a perforated plate positioned between the top plate and the bottom plate and dissecting the cavity into an upper gas compartment and a lower gas compartment; and, wherein the bottom plate comprises a plurality of elongated diffusion slots on its lower surface and a plurality of diffusion holes on its upper surface, each of the diffusion holes making fluid connection from the lower gas compartment to more than one of the diffusion slots.

摘要翻译： 一种用于处理基板的等离子体处理装置的喷头，包括：喷头主体，包括顶板和限定其间的空腔的底板; 形成在顶板中的气体入口; 位于顶板和底板之间的多孔板，并将空腔解剖成上部气体隔室和下部气体隔室; 并且其中所述底板在其下表面上包括多个细长的扩散槽，在其上表面上包括多个扩散孔，每个所述扩散孔使得从所述下部气体隔室到所述扩散槽中的多于一个的流体连接。

公开(公告)号：US07056830B2

公开(公告)日：2006-06-06

申请号：US10655231

申请日：2003-09-03

申请人： Walter R. Merry ,  Cecilia Y. Mak ,  Kam S. Law

发明人： Walter R. Merry ,  Cecilia Y. Mak ,  Kam S. Law

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/30655 ,  H01L21/31116

摘要： A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.

摘要翻译： 一种蚀刻在衬底上形成的包括一系列处理循环的电介质层的方法，其中每个循环包括沉积非活性聚合物膜，激活该膜以蚀刻该结构并除去该膜的步骤。 在一个实施方案中，该方法使用碳氟化合物气体来形成聚合物膜和衬底偏压以激活这种膜。

公开(公告)号：US07029529B2

公开(公告)日：2006-04-18

申请号：US10247403

申请日：2002-09-19

申请人： Kam S. Law ,  Robert Z. Bachrach ,  John M. White ,  Quanyuan Shang

发明人： Kam S. Law ,  Robert Z. Bachrach ,  John M. White ,  Quanyuan Shang

IPC分类号： B05C1/02 ,  B05C13/02

CPC分类号： C23C18/1632 ,  B05D1/002 ,  B05D7/142 ,  C23C18/1605 ,  C23C18/1608 ,  H01L21/288 ,  H01L21/76838 ,  H05K3/12 ,  H05K3/182

摘要： A system and method for processing large area substrates. In one embodiment, a system for processing large area substrates includes prep station, a stamping station and a stamp that is automatically moved between the stamping station and the prep station. The stamping station is adapted to retain a large area substrate thereon. The stamp has a patterned bottom surface that is adapted for microcontact printing. The prep station is for applying a precursor to the patterned bottom surface of the stamp. In one embodiment, a method for processing large area substrates includes the steps of disposing a large area substrate on a platen, inking a stamp adapted for microcontact printing, and automatically contacting a bottom of the stamp to the large area substrate supported on a platen.

摘要翻译： 一种用于处理大面积基板的系统和方法。 在一个实施例中，用于处理大面积基板的系统包括准备台，冲压站和在冲压站和准备站之间自动移动的印模。 冲压站适于在其上保持大面积的基板。 印模具有适于微接触印刷的图案底面。 准备站用于将前体施加到印模的图案化底表面。 在一个实施例中，一种用于处理大面积衬底的方法包括以下步骤：将大面积衬底设置在压板上，上墨适用于微接触印刷，以及自动地将印模底部接触到支撑在压板上的大面积衬底。

公开(公告)号：US06825134B2

公开(公告)日：2004-11-30

申请号：US10254627

申请日：2002-09-24

申请人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

发明人： Kam S. Law ,  Quanyuan Shang ,  William R. Harshbarger ,  Dan Maydan ,  Soo Young Choi ,  Beom Soo Park ,  Sanjay Yadav ,  John M. White

IPC分类号： H01L21471

CPC分类号： C23C16/45542 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/31683 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/32105 ,  H01L21/3211 ,  H01L29/66765

摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.

摘要翻译： 描述了膜层沉积的方法。 使用循环沉积工艺沉积膜层。 循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

公开(公告)号：US06500356B2

公开(公告)日：2002-12-31

申请号：US09535420

申请日：2000-03-27

申请人： Haruhiro Harry Goto ,  William R. Harshbarger ,  Kam S. Law

发明人： Haruhiro Harry Goto ,  William R. Harshbarger ,  Kam S. Law

IPC分类号： H01L2100

CPC分类号： H01L21/32135

摘要： A process for selectively etching silicon from a workpiece without etching silicon oxide or silicon nitride. The principal etchant gas is molecular fluorine gas (F2) that is not excited to a plasma state.

摘要翻译： 用于在不蚀刻氧化硅或氮化硅的情况下从工件选择性地蚀刻硅的工艺。 主蚀刻剂气体是不被等离子体激发的分子氟气（F 2）。

公开(公告)号：US5843277A

公开(公告)日：1998-12-01

申请号：US577645

申请日：1995-12-22

申请人： Haruhiro Harry Goto ,  Yuh-Jia Su ,  Yuen-Kui Wong ,  Kam S. Law

发明人： Haruhiro Harry Goto ,  Yuh-Jia Su ,  Yuen-Kui Wong ,  Kam S. Law

IPC分类号： H05H1/46 ,  C23F4/00 ,  G02F1/1343 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L31/18 ,  H01L21/306

CPC分类号： H01L21/31122 ,  H01L31/1884 ,  G02F1/13439 ,  Y02E10/50

摘要： An RIE method and apparatus for etching through the material layer of a transparent-electrode (ITO) in a single continuous step at a rate better than 100 .ANG./min and with a selectivity better than 20 to 1 is disclosed. Chamber pressure is maintained at least as low as 60 mTorr. A reactive gas that includes ethyl iodide C.sub.2 H.sub.5 I) is used alone or in combination with another gas such as O.sub.2. Plasma-induced light emissions of reaction products and/or the reactants are monitored to determine the time point of effective etch-through.

摘要翻译： 公开了一种RIE方法和装置，用于以单一连续步骤以高于100安培/分钟的速率并且具有优于20比1的选择性蚀刻透明电极（ITO）的材料层。 室压力至少保持在60mTorr以下。 包括乙基碘C2H5I的反应性气体）单独使用或与另一种气体如O 2组合使用。 监测反应产物和/或反应物的等离子体诱导的光发射，以确定有效蚀刻的时间点。

公开(公告)号：US5753133A

公开(公告)日：1998-05-19

申请号：US273382

申请日：1994-07-11

申请人： Jerry Wong ,  Masato M. Toshima ,  Kam S. Law ,  Dan Maydan ,  Norman L. Turner

发明人： Jerry Wong ,  Masato M. Toshima ,  Kam S. Law ,  Dan Maydan ,  Norman L. Turner

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H05H1/00

CPC分类号： H01L21/68742 ,  H01L21/68778 ,  Y10S414/136 ,  Y10S414/139 ,  Y10S414/141

摘要： A chamber for processing substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member. The clamping and lifting apparatus is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting assembly and the support member, and in a retracted position to clamp the substrate to the support member. A clamp actuator is disposed on the chamber wall to move the clamping and lifting assembly between the extended and retracted positions.

摘要翻译： 用于处理衬底的室包括其中从室的侧壁悬挂的支撑构件。 支撑构件包括用于在其上接收衬底的多个平面，并且可围绕水平轴线旋转，以将多个平面位置定位在水平位置，以将衬底放置在平面上或从平面上移除衬底，并且第二位置 以将基板放置在非水平位置进行处理。 夹持和提升装置设置在支撑构件上。 夹紧和提升装置相对于支撑构件可定位在延伸位置，以允许基板定位在夹紧和提升组件和支撑构件之间，并且在缩回位置将基板夹持到支撑构件 。 夹紧致动器设置在室壁上以使夹紧和提升组件在延伸位置和缩回位置之间移动。

公开(公告)号：US5567476A

公开(公告)日：1996-10-22

申请号：US427772

申请日：1995-04-25

申请人： Kam S. Law ,  Robert Robertson ,  Michael Kollrack ,  Angela T. Lee ,  Takako Takehara ,  Guofu J. Feng ,  Dan Maydan

发明人： Kam S. Law ,  Robert Robertson ,  Michael Kollrack ,  Angela T. Lee ,  Takako Takehara ,  Guofu J. Feng ,  Dan Maydan

IPC分类号： H01L21/205 ,  C23C16/24 ,  C23C16/34 ,  H01L21/31 ,  H01L21/318 ,  H01L21/336 ,  H01L29/786 ,  C23C16/00

CPC分类号： H01L29/66765 ,  C23C16/24 ,  C23C16/345

摘要： A multi-step CVD method for thin film transistor is disclosed. The method can be carried out by depositing a high quality g-SiN.sub.x at a low deposition rate on top of an average quality gate nitride deposited at a high deposition rate and then depositing an amorphous silicon layer. It also applies in a process where high quality amorphous silicon is first deposited at a low deposition rate on a gate nitride layer to form an interface, and then average quality amorphous silicon is deposited at a high deposition rate to complete the silicon layer. The unique process can be applied whenever an interface exists with an active semiconductor layer of amorphous silicon. The process is applicable to either the back channel etched TFT device or the etch stopped TFT device.

摘要翻译： 公开了薄膜晶体管的多步CVD方法。 该方法可以通过在以高沉积速率沉积的平均质量的氮化镓的顶部上以低沉积速率沉积高质量的g-SiNx，然后沉积非晶硅层来进行。 它也适用于首先在栅极氮化物层上以低沉积速率沉积高品质非晶硅以形成界面的过程，然后以高沉积速率淀积平均质量的非晶硅以完成硅层。 每当与非晶硅的有源半导体层存在界面时，可以应用独特的工艺。 该工艺适用于后沟道蚀刻TFT器件或蚀刻停止的TFT器件。

公开(公告)号：US20110315081A1

公开(公告)日：2011-12-29

申请号：US13149828

申请日：2011-05-31

申请人： Kam S. Law ,  Daisheng Mao ,  Robin K. F. Law ,  Michael Allen Renta

发明人： Kam S. Law ,  Daisheng Mao ,  Robin K. F. Law ,  Michael Allen Renta

IPC分类号： C23C16/511 ,  B05C13/00

CPC分类号： H01L21/68757 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50

摘要： A susceptor for a plasma process apparatus, the susceptor having a graphite main body with a top surface for supporting at least one substrate, the top surface having a plasma sprayed aluminum oxide coating. A vacuum processing chamber, has a main chamber body, a showerhead provided at the ceiling of the chamber body, a pedestal provided inside the chamber body, and a susceptor coupled to the pedestal, the susceptor is made of a graphite main body having a top surface for supporting at least one substrate, the top surface having a dielectric coating such as, e.g., plasma sprayed aluminum oxide coating.

摘要翻译： 一种用于等离子体处理装置的基座，所述基座具有石墨主体，所述石墨主体具有用于支撑至少一个基板的顶表面，所述顶表面具有等离子体喷涂的氧化铝涂层。 真空处理室具有主室主体，设置在室主体顶部的喷头，设置在室主体内部的基座和与基座耦合的基座，基座由具有顶部的石墨主体 用于支撑至少一个基板的表面，所述顶表面具有介电涂层，例如等离子喷涂的氧化铝涂层。