公开(公告)号：US10676817B2

公开(公告)日：2020-06-09

申请号：US13569064

申请日：2012-08-07

申请人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

发明人： Qunhua Wang ,  Soo Young Choi ,  Robin L. Tiner ,  John M. White ,  Gaku Furuta ,  Beom Soo Park

IPC分类号： C23C16/04 ,  C23C16/458 ,  C23C14/04

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

公开(公告)号：US09758869B2

公开(公告)日：2017-09-12

申请号：US12779167

申请日：2010-05-13

申请人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L Tiner ,  John M White ,  Shinichi Kurita

发明人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L Tiner ,  John M White ,  Shinichi Kurita

IPC分类号： C23C16/00 ,  H01J37/00 ,  C23C16/455 ,  C23C16/44 ,  C23C16/509 ,  H01J37/32

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

公开(公告)号：US09287137B2

公开(公告)日：2016-03-15

申请号：US13630901

申请日：2012-09-28

申请人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

发明人： Qunhua Wang ,  Weijie Wang ,  Young Jin Choi ,  Seon-Mee Cho ,  Yi Cui ,  Beom Soo Park ,  Soo Young Choi

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L21/316 ,  H01L29/786 ,  H01L21/31 ,  H01L21/02 ,  C23C16/24 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01L29/66 ,  H01L21/77

CPC分类号： H01L21/31 ,  C23C16/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02675 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/7869 ,  H01L2021/775

摘要： Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

摘要翻译： 本公开的实施例通常提供在TFT器件中形成含硅层的方法。 硅可用于在LTPS TFT中形成有源沟道，或者用作栅极介电层，钝化层或甚至蚀刻停止层中的元素。 通过气相沉积工艺沉积含硅层，由此惰性气体如氩气与硅前体一起引入。 惰性气体起到驱除弱的，悬挂的硅 - 氢键或硅 - 硅键的作用，使得强硅硅或硅 - 氧键保留以形成基本上不含氢的含硅层。

公开(公告)号：US08962567B2

公开(公告)日：2015-02-24

申请号：US13985845

申请日：2011-04-06

申请人： Soo Young Choi ,  Dae Won Kim ,  Sung Ho Lee ,  Jinseu Park ,  Won Sik Eum

发明人： Soo Young Choi ,  Dae Won Kim ,  Sung Ho Lee ,  Jinseu Park ,  Won Sik Eum

IPC分类号： A61K38/00 ,  A61P27/02 ,  C12N9/90 ,  A61K38/16 ,  A61K38/52 ,  C07K7/06 ,  C07K14/00

CPC分类号： C12N9/90 ,  A61K38/00 ,  A61K38/16 ,  A61K38/52 ,  C07K7/06 ,  C07K14/001 ,  C07K2319/00 ,  C07K2319/10 ,  C12Y502/01008 ,  Y10S514/914

摘要： Disclosed is a treatment for ophthalmic diseases, more specifically, a pharmaceutical composition for treating ophthalmic diseases including a fusion protein of FK506 binding protein capable of penetrating into the ocular tissue as an active ingredient.

摘要翻译： 本发明涉及一种治疗眼科疾病的方法，更具体地说，涉及一种治疗眼科疾病的药物组合物，包括能够渗入眼组织的FK506结合蛋白的融合蛋白作为有效成分。

公开(公告)号：US08877301B2

公开(公告)日：2014-11-04

申请号：US13153641

申请日：2011-06-06

申请人： Gaku Furuta ,  Soo Young Choi ,  Young-Jin Choi

发明人： Gaku Furuta ,  Soo Young Choi ,  Young-Jin Choi

IPC分类号： C23C16/509 ,  C23C16/458 ,  C23C16/455 ,  H01J37/32

CPC分类号： C23C16/4585 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32623 ,  H01J37/32697

摘要： An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.

摘要翻译： 用于等离子体处理室中的不对称接地的基座，用于化学气相沉积到由基座支撑并接地的大矩形面板上。 多个接地带连接在基座的外围与接地的真空室之间，以缩短RF电子的接地路径。 柔性带允许基座垂直移动。 带子提供对周边不对称的地面电导。 带可以是均匀间隔的，但是具有不同的厚度或不同的形状，或者从可用的接地点去除并因此提供不同的RF电导。 选择不对称性以改善PECVD沉积膜的沉积均匀性和其他质量。

公开(公告)号：US20140251216A1

公开(公告)日：2014-09-11

申请号：US13789188

申请日：2013-03-07

申请人： Qunhua WANG ,  Soo Young CHOI ,  Robin L. TINER ,  John M. WHITE ,  Gaku FURUTA ,  Beom Soo PARK

发明人： Qunhua WANG ,  Soo Young CHOI ,  Robin L. TINER ,  John M. WHITE ,  Gaku FURUTA ,  Beom Soo PARK

IPC分类号： C23C16/04

CPC分类号： C23C16/042 ,  C23C14/042 ,  C23C16/4585 ,  H01J37/32477 ,  H01J37/32623 ,  H01J37/32715

摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

摘要翻译： 本文描述了用于处理衬底的装置。 用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面， 以及与阴影框体连接的可拆卸唇缘。 可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

公开(公告)号：US08674844B2

公开(公告)日：2014-03-18

申请号：US12661699

申请日：2010-03-19

申请人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

发明人： Beom Soo Park ,  Hong Soon Kim ,  Soo Young Choi ,  James Hoffman ,  Suhail Anwar ,  John M. White

IPC分类号： G08B21/00

CPC分类号： H01J37/32183 ,  H01J37/32935 ,  H01J37/3299

摘要： Malfunction of a component within an RF-powered plasma chamber is detected by observing an operating condition of the plasma chamber and detecting when the operating condition deviates from a previously observed range bounded by lower and upper limits. The lower and upper limits are determined by observing the minimum and maximum values of that operating condition during the processing of workpieces throughout one or more plasma chamber cleaning cycles immediately preceding the most recent cleaning of the plasma chamber.

摘要翻译： 通过观察等离子体室的操作状态并检测何时操作条件偏离由下限和上限限定的先前观察范围，来检测RF供电的等离子体室内部件的故障。 通过在紧邻等离子体室的最近清洁之前的一个或多个等离子体室清洁循环期间观察工件处理期间该操作条件的最小值和最大值来确定下限和上限。

公开(公告)号：US20130330368A1

公开(公告)日：2013-12-12

申请号：US13985845

申请日：2011-04-06

申请人： Soo Young Choi ,  Dae Won Kim ,  Sung Ho Lee ,  Jinseu Park ,  Won Sik Eum

发明人： Soo Young Choi ,  Dae Won Kim ,  Sung Ho Lee ,  Jinseu Park ,  Won Sik Eum

IPC分类号： C12N9/90 ,  C07K14/00 ,  C07K7/06

CPC分类号： C12N9/90 ,  A61K38/00 ,  A61K38/16 ,  A61K38/52 ,  C07K7/06 ,  C07K14/001 ,  C07K2319/00 ,  C07K2319/10 ,  C12Y502/01008 ,  Y10S514/914

摘要： Disclosed is a treatment for ophthalmic diseases, more specifically, a pharmaceutical composition for treating ophthalmic diseases including a fusion protein of FK506 binding protein capable of penetrating into the ocular tissue as an active ingredient.

摘要翻译： 本发明涉及一种治疗眼科疾病的方法，更具体地说，涉及一种治疗眼科疾病的药物组合物，包括能够渗入眼组织的FK506结合蛋白的融合蛋白作为有效成分。

公开(公告)号：US20130302999A1

公开(公告)日：2013-11-14

申请号：US13886175

申请日：2013-05-02

申请人： Tae Kyung WON ,  Seon-Mee CHO ,  Soo Young CHOI ,  Beom Soo PARK ,  Dong-Kil YIM ,  John M. WHITE ,  Jozef KUDELA

发明人： Tae Kyung WON ,  Seon-Mee CHO ,  Soo Young CHOI ,  Beom Soo PARK ,  Dong-Kil YIM ,  John M. WHITE ,  Jozef KUDELA

IPC分类号： H01L21/02

CPC分类号： H01L21/0262 ,  C23C16/401 ,  C23C16/45578 ,  C23C16/511 ,  C23C16/545 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274

摘要： Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

摘要翻译： 本文描述了用于处理衬底的方法。 方法可以包括将基底定位在处理室中，将处理室保持在低于400℃的温度，使包含硅氢化物或硅卤化物的反应气体和氧化前体流入处理室，施加微波功率 以从反应气体中产生微波等离子体，以及在衬底的暴露表面的至少一部分上沉积氧化硅层。

公开(公告)号：US20130140009A1

公开(公告)日：2013-06-06

申请号：US13722637

申请日：2012-12-20

申请人： John M. White ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

发明人： John M. White ,  Soo Young Choi ,  Beom Soo Park ,  Gaku Furuta ,  Young Jin Choi ,  Robin L. Tiner

IPC分类号： F28D7/00

CPC分类号： F28D7/00 ,  C23C16/4405 ,  F28D2021/0078 ,  F28F9/26

摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.