Invention Grant
- Patent Title: Method for plasma etching a dielectric layer
- Patent Title (中): 等离子体蚀刻电介质层的方法
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Application No.: US10655231Application Date: 2003-09-03
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Publication No.: US07056830B2Publication Date: 2006-06-06
- Inventor: Walter R. Merry , Cecilia Y. Mak , Kam S. Law
- Applicant: Walter R. Merry , Cecilia Y. Mak , Kam S. Law
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan LLP
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method of etching a dielectric layer formed on a substrate including a sequence of processing cycles, wherein each cycle comprises steps of depositing an inactive polymeric film, activating the film to etch the structure, and removing the film is disclosed. In one embodiment, the method uses a fluorocarbon gas to form the polymeric film and a substrate bias to activate such film.
Public/Granted literature
- US20050048789A1 Method for plasma etching a dielectric layer Public/Granted day:2005-03-03
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