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公开(公告)号:CN1359157A
公开(公告)日:2002-07-17
申请号:CN01125517.X
申请日:2001-08-10
Applicant: 三菱电机株式会社 , 菱电半导体系统工程株式会社
IPC: H01L27/10 , H01L27/108
CPC classification number: H01L28/55 , H01L21/76838 , H01L28/75
Abstract: 一种具有电容元件的半导体器件及其制造方法,在下层电极9A上形成电容元件用电介质层10。在该下部电极层9A和电容元件用电介质层10上形成层间绝缘层11,在该层间绝缘层11上形成到达电容元件用电介质层10的插塞孔11a。形成上层电极12A,13A使得充填该插塞孔11a的内部,而且把电容元件用电介质层10夹在中间与下层电极9A相对。电容元件用电介质层10在插塞孔11a的正下方区以及插塞孔11a的周壁的外周的区域与下层电极9A接触。由此,可以得到能够防止下层电极9A的金属原子的扩散的同时具有大容量的电容元件的半导体器件及其制造方法。
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公开(公告)号:CN1307363A
公开(公告)日:2001-08-08
申请号:CN01110846.0
申请日:2001-01-12
Applicant: 三菱电机株式会社
IPC: H01L23/50 , H01L23/522 , H01L21/768 , H01L21/60
CPC classification number: H01L24/48 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/85 , H01L2224/02166 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05073 , H01L2224/05093 , H01L2224/05124 , H01L2224/05647 , H01L2224/05669 , H01L2224/16 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48463 , H01L2224/48647 , H01L2224/48669 , H01L2224/48747 , H01L2224/48769 , H01L2224/48799 , H01L2224/48847 , H01L2224/48869 , H01L2224/7865 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85375 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01045 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19042 , H01L2924/19043 , H01L2224/78 , H01L2924/00 , H01L2924/00015
Abstract: 提供防止高集成化的半导体器件的焊盘电极的表面氧化,与外部端子的连接强度高的半导体器件。一种半导体器件,配有用于连接外部电极的焊盘电极和与该焊盘电极连接的多层布线结构,覆盖该焊盘电极、在该焊盘电极上有开口部并使该焊盘电极的表面露出的绝缘膜的单面与贵金属和从以该贵金属为主要成分的金属中选择的一种贵金属材料组成的金属面连接。
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公开(公告)号:CN1416170A
公开(公告)日:2003-05-07
申请号:CN02141160.3
申请日:2002-07-08
Applicant: 三菱电机株式会社
IPC: H01L23/522 , H01L21/768 , H01L21/60
CPC classification number: H01L24/05 , H01L23/5226 , H01L23/53214 , H01L23/53228 , H01L24/03 , H01L24/45 , H01L24/48 , H01L2224/02166 , H01L2224/04042 , H01L2224/05006 , H01L2224/05073 , H01L2224/05093 , H01L2224/05166 , H01L2224/05184 , H01L2224/05187 , H01L2224/05546 , H01L2224/05624 , H01L2224/05644 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2224/48799 , H01L2224/48824 , H01L2224/48844 , H01L2224/85201 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01029 , H01L2924/01039 , H01L2924/0105 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/13091 , H01L2924/181 , H01L2924/19043 , H01L2924/00014 , H01L2924/00 , H01L2924/00015 , H01L2924/01004
Abstract: 本发明的课题在于在备有使用铜布线的多层布线结构的半导体装置中,获得将键合引线键合在键合区上时能提高连接的可靠性及稳定性的半导体装置及其制造方法。在第二层间绝缘膜14上局部地形成都是由铝合金构成的第三层布线17及键合区71。在第三层间绝缘膜63、第四层间绝缘膜67、保护绝缘膜72、以及缓冲被覆膜73内局部地形成具有由键合区71规定的底面的开孔部74。在开孔部74内插入键合引线75,键合引线75被键合在键合区71上。
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