公开(公告)号：US11362110B2

公开(公告)日：2022-06-14

申请号：US16927740

申请日：2020-07-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Pochun Wang ,  Guo-Huei Wu ,  Hui-Zhong Zhuang ,  Chih-Liang Chen ,  Li-Chun Tien

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L23/522 ,  H01L23/528 ,  H01L21/74 ,  H01L21/768 ,  H01L21/822 ,  H01L21/423 ,  H01L29/786 ,  H01L27/06

摘要： A semiconductor structure includes a first transistor, a second transistor, a first dummy source/drain, a third transistor, a fourth transistor, and a second dummy source/drain. The first transistor and a second transistor adjacent to the first transistor are at a first elevation. The first dummy source/drain is disposed at the first elevation. The third transistor and a fourth transistor adjacent to the third transistor, are at a second elevation different from the first elevation. The second dummy source/drain is disposed at the second elevation. The second transistor is vertically aligned with the third transistor. The first dummy source/drain is vertically aligned with a source/drain of the fourth transistor. The second dummy source/drain is vertically aligned with a source/drain of the first transistor. The gate structure between the second dummy source/drain and a source/drain of the third transistor is absent. A method for manufacturing a semiconductor structure is also provided.

公开(公告)号：US20210082965A1

公开(公告)日：2021-03-18

申请号：US16756934

申请日：2020-03-23

申请人： CHENGDU CEC PANDA DISPLAY TECHNOLOGY CO., LTD.

发明人： Shuaiyi WANG ,  Hui TANG ,  Peng GAO ,  Ke ZENG ,  Xiangfeng LI

IPC分类号： H01L27/12 ,  H01L21/423

摘要： The present disclosure provides a method for manufacturing a thin film transistor, a thin film transistor, and a display apparatus. The method for manufacturing a thin film transistor includes: forming a gate layer on a substrate; forming a gate insulating layer on the gate layer; forming an active layer on the gate insulating layer; forming a source/drain layer on the active layer; and performing a plasma bombardment treatment on a surface of the active layer on which the source/drain layer is formed, and controlling the plasma bombardment treatment to be performed at a gas flow rate of 4K sccm to 70K sccm, at a pressure of 600 mTorr to 1200 mTorr, at a power of 4 KW to 12 KW for a treatment time of 10 s to 60 s.

公开(公告)号：US10468498B2

公开(公告)日：2019-11-05

申请号：US16100317

申请日：2018-08-10

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Seyoung Kim ,  Choonghyun Lee ,  Injo Ok ,  Soon-Cheon Seo

IPC分类号： H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/324 ,  H01L29/165 ,  H01L21/02 ,  H01L29/737 ,  H01L29/10 ,  H01L29/732 ,  H01L29/417 ,  H01L21/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423

摘要： A method of manufacturing a bipolar junction transistor (BJT) structure is provided. Pattern etching through a second semiconductor layer and recessing a silicon germanium layer are performed to form a plurality of vertical fins each including a silicon germanium pattern, a second semiconductor pattern and a hard mask pattern sequentially stacked on a first semiconductor layer above a substrate. First spacers are formed on sidewalls of the plurality of vertical fins. Exposed silicon germanium layer above the first semiconductor layer is directionally etched away. A germanium oxide layer is conformally coated to cover all exposed top and sidewall surfaces. Condensation annealing followed by silicon oxide strip is performed. The first spacers, remaining germanium oxide layer and the hard mask pattern are removed. A dielectric material is deposited to isolate the plurality of vertical fins. An emitter, a base and a collector contacts are formed to connect to the second semiconductor pattern, the silicon germanium pattern and the first semiconductor layer, respectively. The BJT structures manufactured are also provided.

公开(公告)号：US07790587B2

公开(公告)日：2010-09-07

申请号：US11594301

申请日：2006-11-07

申请人： Jack Hwang ,  Sridhar Govindaraju ,  Seok-Hee Lee ,  Patrick H. Keys ,  Chad D. Lindfors

发明人： Jack Hwang ,  Sridhar Govindaraju ,  Seok-Hee Lee ,  Patrick H. Keys ,  Chad D. Lindfors

IPC分类号： H01L21/423

CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L29/66575 ,  H01L29/6659

摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include creating an amorphous region in source/drain regions of a substrate by ion implantation with an electrically neutral dopant, annealing with a first anneal that removes defects without completely re-crystallizing the amophous region, ion implantation of electrically active dopant to a depth shallower than the remaining amorphous region, followed by a second anneal.

摘要翻译： 描述形成微电子器件的方法和相关结构。 这些方法可以包括通过用电中性掺杂剂的离子注入在衬底的源极/漏极区域中产生非晶区域，用第一退火进行退火，其中消除缺陷而不完全重新结晶小檗碱区域，将电活性掺杂剂离子注入到 深度比剩余的非晶区浅，随后进行第二次退火。

公开(公告)号：US5937282A

公开(公告)日：1999-08-10

申请号：US893550

申请日：1997-07-11

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Naoto Kusumoto ,  Satoshi Teramoto

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L21/423 ,  H01L21/00

CPC分类号： H01L21/2026 ,  H01L21/423 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S148/093

摘要： In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.

公开(公告)号：US4806497A

公开(公告)日：1989-02-21

申请号：US95118

申请日：1987-09-11

申请人： Bruno Adam ,  Andre Jaecklin ,  Thomas Vlasak

发明人： Bruno Adam ,  Andre Jaecklin ,  Thomas Vlasak

IPC分类号： C30B31/22 ,  H01L21/261 ,  H01L21/263 ,  H01L21/265 ,  H01L21/322 ,  H01L29/10 ,  H01L29/74 ,  H01L29/744 ,  H01L21/423 ,  H01L21/425 ,  H01L21/428

CPC分类号： H01L29/1012 ,  H01L21/261 ,  H01L21/263 ,  H01L21/26513 ,  H01L29/744 ,  Y10S438/904

摘要： A method for producing large-area power semiconductor components, wherein at least two irradiation processes (neutron irridiation, ion implantation electron, .gamma.or proton irradiation) are used to produce the basic doping, to introduce deep pn junctions and to introduce recombination centers. It is precisely for the critical process steps (p-base, n-type stop layer) that the improved homogeneity of the layers signifies a higher yield and improved limit data for the finished components.

摘要翻译： 一种制造大面积功率半导体元件的方法，其中使用至少两个照射过程（中子注入，离子注入电子，γ或质子照射）来产生基本掺杂，以引入深pn结并引入复合中心。 正是关键的工艺步骤（p型，n型停止层），这些层的改进的均匀性意味着较高的产量和改进的成品部件的限制数据。

公开(公告)号：US08304033B2

公开(公告)日：2012-11-06

申请号：US12428973

申请日：2009-04-23

申请人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

发明人： Martin D. Tabat ,  Matthew C. Gwinn ,  Robert K. Becker ,  Avrum Freytsis ,  Michael Graf

IPC分类号： C23C14/10 ,  C23C14/48 ,  C23C14/14 ,  B05D3/06 ,  H01L21/263 ,  C23C14/08 ,  H01L21/423 ,  H01L21/425 ,  H01L21/265

CPC分类号： H01J37/08 ,  H01J37/317 ,  H01J2237/061 ,  H01J2237/0812 ,  H01J2237/0825 ,  H01J2237/0827

摘要： Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.

摘要翻译： 公开了使用多喷嘴和撇渣器组件在基底上生长，改性，沉积或掺杂层的操作方法，用于在气体簇离子束（GCIB）系统中引入工艺气体混合物或多种工艺气体混合物 。 还公开了一种在衬底上形成浅沟槽隔离（STI）结构的方法，例如使用具有两个单独气体供应的多喷嘴系统的SiO 2 STI结构，例如提供含硅气体和含氧气体， 含气。

公开(公告)号：US20100144089A1

公开(公告)日：2010-06-10

申请号：US12708601

申请日：2010-02-19

申请人： NOBUYUKI KAJI ,  HISATO YABUTA

发明人： NOBUYUKI KAJI ,  HISATO YABUTA

IPC分类号： H01L21/423

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02675 ,  H01L21/02689 ,  H01L21/3105 ,  H01L21/3115 ,  H01L21/428

摘要： A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.

摘要翻译： 一种使用氧化物半导体的器件的制造方法，包括在衬底上形成氧化物半导体的工艺以及通过用能量射线照射其预定区域来改变氧化物半导体的导电性的工艺。

公开(公告)号：US4376659A

公开(公告)日：1983-03-15

申请号：US292755

申请日：1981-08-13

申请人： Carlos A. Castro

发明人： Carlos A. Castro

IPC分类号： C30B1/10 ,  C30B33/00 ,  H01L31/18 ,  H01L21/42 ,  H01L21/36 ,  H01L21/423

CPC分类号： C30B33/00 ,  C30B1/10 ,  C30B29/40 ,  H01L31/1832 ,  H01L31/1844 ,  Y02E10/544 ,  Y10S148/084

摘要： An epitaxial layer of a narrow-gap semiconductor is deposited on a substrate comprising a wider-gap semiconductor. The opposite surface of the substrate is then illuminated with light pulses at a wavelength corresponding to the desired bandgap of the resulting material. Each pulse causes localized heating where it first encounters a material having a sufficiently narrow bandgap to be an absorber at the wavelength of illumination. This localized heating will then cause interdiffusion, producing a layer of semiconductor alloy having a bandgap intermediate between the bandgaps of the two starting materials. Repetition of this step will have the effect of moving the region of localized absorption away from the original location, and toward the film/air interface. Since the desired end product composition will be transparent to the illumination applied, the process is inherently self-limiting. By appropriately selecting the wavelength of illumination applied, variously proportioned semiconductor compositions may be obtained, so that the bandgap of the resulting material may be arbitrarily selected to have any desired value between the bandgaps of the two starting materials. No surface damage is caused by this technique.

摘要翻译： 将窄间隙半导体的外延层沉积在包括较宽间隙半导体的衬底上。 然后用对应于所得材料的期望带隙的波长的光脉冲照射衬底的相对表面。 每个脉冲引起局部加热，其中首先遇到具有足够窄带隙的材料成为在照明波长处的吸收体。 这种局部加热将导致相互扩散，从而产生一层半导体合金，其中两个起始材料的带隙之间具有带隙中间。 重复这一步将具有将局部吸收区域从原始位置移动到电影/空中界面的效果。 由于所需的最终产品组合对所施加的照明是透明的，所以该过程本质上是自限制的。 通过适当选择施加的照明波长，可以获得不同比例的半导体组合物，从而可以任意选择所得材料的带隙以在两个起始材料的带隙之间具有任何期望的值。 这种技术不会造成表面损伤。

公开(公告)号：US4374678A

公开(公告)日：1983-02-22

申请号：US269292

申请日：1981-06-01

申请人： Carlos A. Castro

发明人： Carlos A. Castro

IPC分类号： H01L31/10 ,  C30B1/10 ,  C30B29/48 ,  C30B33/00 ,  H01L21/208 ,  H01L21/36 ,  H01L21/363 ,  H01L21/42 ,  H01L31/18 ,  H01L21/423

CPC分类号： C30B33/00 ,  C30B1/10 ,  C30B29/48 ,  H01L31/1832 ,  H01L31/1844 ,  Y02E10/544 ,  Y10S117/904 ,  Y10S148/084

摘要： A HgCdTe film is produced on a CdTe substrate, by depositing HgTe on a CdTe substrate, and then illuminating the substrate from the underside with infrared light at a wavelength longer than the desired operating wavelength (band-gap-equivalent wavelength) of the device. Since CdTe is transparent in the infrared, the light will reach the HgTe/CdTe interface. Since HgTe is an absorber in the infrared, most of the infrared radiation will be absorbed near the interface, which will cause intense localized heating and thus accelerate the interdiffusion of HgTe and CdTe. This interdiffusion will have the effect of moving the interface away from the original location, and toward the film/air interface. Since the desired end-product HgCdTe composition will be transparent to the infrared radiation applied, the process is inherently self-limiting. By appropriately selecting the infrared wavelength applied, variously proportioned HgCdTe compositions may be obtained, so that the effective band gap of the device can be selected at will. Moreover, no surface damage is caused by this technique.

摘要翻译： 通过在CdTe衬底上沉积HgTe，然后用比器件的期望工作波长（带隙等效波长）长的红外光从底面照射衬底，在CdTe衬底上产生HgCdTe膜。 由于CdTe在红外线中是透明的，所以光将到达HgTe / CdTe界面。 由于HgTe是红外线中的吸收剂，大部分红外辐射将被吸附在界面附近，这将导致强烈的局部加热，从而加速HgTe和CdTe的相互扩散。 这种相互扩散将具有将接口从原始位置移动到电影/空中接口的效果。 由于所需的最终产物HgCdTe组合物对于所应用的红外辐射将是透明的，因此该过程本质上是自限制的。 通过适当选择应用的红外波长，可以获得不同比例的HgCdTe组合物，从而可以随意选择器件的有效带隙。 此外，这种技术不会造成表面损伤。