公开(公告)号：US20240345483A1

公开(公告)日：2024-10-17

申请号：US18601583

申请日：2024-03-11

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Naoki KOBAYASHI ,  Nobuhiro Nagamachi ,  Kenta Ishiwata ,  Daisuke Kori

IPC分类号： G03F7/11 ,  G03F7/075 ,  G03F7/09

CPC分类号： G03F7/11 ,  G03F7/0752 ,  G03F7/094

摘要： The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

公开(公告)号：US20240319598A1

公开(公告)日：2024-09-26

申请号：US18594575

申请日：2024-03-04

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Takehiro SATO ,  Shun Kikuchi ,  Ryo Mitsui ,  Seiichiro Tachibana

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20

CPC分类号： G03F7/0758 ,  G03F7/094 ,  G03F7/167 ,  G03F7/2016 ,  G03F7/2037

摘要： The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.

公开(公告)号：US12099300B2

公开(公告)日：2024-09-24

申请号：US16598264

申请日：2019-10-10

申请人： Rohm and Haas Electronic Materials LLC

发明人： Sheng Liu ,  James F. Cameron ,  Shintaro Yamada ,  Iou-Sheng Ke ,  Keren Zhang ,  Daniel Greene ,  Paul J. LaBeaume ,  Li Cui ,  Suzanne M. Coley

IPC分类号： G03F7/11 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20

CPC分类号： G03F7/11 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/2016

摘要： Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

公开(公告)号：US12074027B2

公开(公告)日：2024-08-27

申请号：US17481680

申请日：2021-09-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jing-Hong Huang ,  Wei-Han Lai ,  Ching-Yu Chang

IPC分类号： H01L21/027 ,  H01L21/3213 ,  G03F7/09 ,  G03F7/11

CPC分类号： H01L21/0276 ,  H01L21/32139 ,  G03F7/091 ,  G03F7/11

摘要： A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.

公开(公告)号：US12071533B2

公开(公告)日：2024-08-27

申请号：US16606570

申请日：2018-04-13

申请人： Ares Materials Inc.

发明人： Radu Reit ,  Adrian Avendano-Bolivar ,  David Arreaga-Salas

IPC分类号： C08G73/10 ,  B05D3/06 ,  B05D3/12 ,  C08L101/12 ,  G02F1/1333 ,  G03F7/09 ,  H01L27/12

CPC分类号： C08L101/12 ,  B05D3/067 ,  B05D3/12 ,  G02F1/133305 ,  G03F7/09 ,  H01L27/1218 ,  H01L27/1262 ,  C08G73/1028 ,  C08L2203/20

摘要： Provided are methods for selecting a polymer for use as a flexible electronics substrate. An example method includes selecting a thermosetting polymer from a plurality of polymers, wherein the thermosetting polymer: undergoes a thermomechanical transition at a transition temperature between room temperature and the highest temperature observed during processing from the glassy to the rubbery regime; wherein the thermosetting polymer has a Young's modulus below 3 GPa in the glassy regime and wherein the thermosetting polymer has a Young's modulus above 0.3 MPa in the rubbery regime. The method further includes producing a flexible electronic substrate from the selected polymer.

公开(公告)号：US20240282274A1

公开(公告)日：2024-08-22

申请号：US18649306

申请日：2024-04-29

申请人： PixelDisplay, Inc.

发明人： David Wyatt

IPC分类号： G09G3/34 ,  B82Y20/00 ,  B82Y40/00 ,  C09K11/00 ,  G02B5/20 ,  G02F1/01 ,  G02F1/167 ,  G02F1/1677 ,  G03F7/09 ,  H01L25/075 ,  H01L27/15 ,  H10K59/35 ,  H10K59/38

CPC分类号： G09G3/3413 ,  C09K11/00 ,  G02B5/208 ,  G02B6/0068 ,  G02F1/01 ,  G03F7/091 ,  H01L25/0753 ,  H01L27/15 ,  H10K59/352 ,  H10K59/353 ,  B82Y20/00 ,  B82Y40/00 ,  G02B6/0073 ,  G02F1/167 ,  G02F1/1677 ,  G02F2202/30 ,  G09G2320/0666 ,  H10K59/38

摘要： Presented herein are methods for creating nanoparticles, which exhibit desirable electro-luminescent and photo-luminescent capabilities, while retaining the robust inorganic nature. And incorporating the nanoparticles in micron and sub-micron scale structures, via a range of patterning techniques, to create highly functional meta-material apparatus. Example embodiments include applications in emissive color elements within displays, Micro-LED devices, and thin-film apparatus; integrating optical, photonic and plasmonic properties, from the combination of patternable nano-scale features, with photo/electro-luminescing material capabilities; performing multiple light processing functions, within the apparatus. The method of construction, materials, electrical drive, color and pixel manipulation as well as system integration are described, such that one of ordinary skill in the art could construct implementations including lighting, displays, panels and other applications.

公开(公告)号：US20240274637A1

公开(公告)日：2024-08-15

申请号：US18643860

申请日：2024-04-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Wei-Chao CHIU ,  Chun-Wei CHANG ,  Ching-Sen KUO ,  Feng-Jia SHIU

IPC分类号： H01L27/146 ,  G03F7/09

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14685 ,  H01L27/14687 ,  G03F7/094

摘要： A method includes performing a first lithography process using a first pattern of a first photomask to form a first photoresist pattern on a front side of a device substrate; performing a first implantation process using the first pattern as a mask to form first isolation regions in the device substrate; after performing the first implantation process, performing a second lithography process using a second pattern of a second photomask to form a second photoresist pattern on the front side of the device substrate, the second pattern being shifted from the first pattern by a distance less than the first pitch and in the first direction; performing a second implantation process using the second photoresist pattern as a mask to form second isolation regions in the device substrate and spaced apart from the first isolation regions; and forming pixels between the first and second isolation regions.

公开(公告)号：US12032292B2

公开(公告)日：2024-07-09

申请号：US17055264

申请日：2019-05-09

申请人： Showa Denko Materials Co., Ltd. ,  KIMOTO CO., LTD.

发明人： Hideki Etori ,  Keiko Kitamura ,  Yoshiaki Fuse ,  Nobuhito Komuro

IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/30 ,  H05K3/00

CPC分类号： G03F7/092 ,  G03F7/30 ,  H05K3/0076

摘要： A photosensitive film of the present invention includes a carrier film having a first surface whose surface roughness is 0.1 to 0.4 μm, and a photosensitive layer formed on the first surface, in which a haze of the carrier film is 30 to 65%, and a spectral haze at a wavelength of 405 nm of the carrier film, as measured by providing a transparent resin layer in which a difference between a refractive index of the transparent resin layer and a refractive index of the photosensitive layer is within ±0.02 on the first surface, is 0.1 to 9.0%.

公开(公告)号：US12032286B2

公开(公告)日：2024-07-09

申请号：US16902962

申请日：2020-06-16

申请人： ASAHI KASEI KABUSHIKI KAISHA ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Hidenori Nagai ,  Shunsuke Furutani ,  Kanako Mizumura ,  Yuzo Kotani

IPC分类号： G03F7/00 ,  B01L3/00 ,  B81C1/00 ,  G03F7/09 ,  G03F7/32

CPC分类号： G03F7/0035 ,  B01L3/502707 ,  B81C1/00071 ,  G03F7/094 ,  G03F7/32 ,  B81C2201/0159

摘要： Provided is a method for producing a multi-layered microchannel device by using a photosensitive resin laminate, which is highly-defined and excellent in dimension accuracy and enables channels to be partially hydrophilized or hydrophobilized, wherein the method comprises step (i) of sequentially carrying out (i-a) forming a first photosensitive resin layer on a substrate, (i-b) light-exposing the first photosensitive resin layer, and (i-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a first channel pattern layer; and step (ii) of sequentially carrying out (ii-a) laminating a second photosensitive resin laminate on the first channel pattern layer formed in the step (i), (ii-b) light-exposing a photosensitive layer of the second photosensitive resin laminate, and (ii-c) developing the light-exposed photosensitive layer and forming a channel pattern layer, to form a second channel pattern layer.

公开(公告)号：US20240198675A1

公开(公告)日：2024-06-20

申请号：US18593420

申请日：2024-03-01

申请人： Funai Electric Co., Ltd.

发明人： Sean T. Weaver

IPC分类号： B41J2/14 ,  B41J2/16 ,  G03F7/004 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  G03F7/40

CPC分类号： B41J2/1433 ,  B41J2/1603 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/164 ,  G03F7/004 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/094 ,  G03F7/11 ,  G03F7/40 ,  B41J2202/03

摘要： A composite photoresist material and method of making the composite photoresist material. The composite photoresist material includes: a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin.