公开(公告)号：US20250060429A1

公开(公告)日：2025-02-20

申请号：US18782481

申请日：2024-07-24

Applicant: Infineon Technologies AG

Inventor： Manuel GILLINGER

IPC: G01R33/09 ,  G01R3/00

Abstract: A magnetoresistive sensor contains a bridge circuit having at least one magnetoresistive resistor, wherein the bridge circuit is configured to provide a first differential analog output voltage. The magnetoresistive sensor also contains an amplifier circuit connected downstream of the bridge circuit, wherein the amplifier circuit is configured to provide a second differential analog output voltage based on the first differential analog output voltage provided by the bridge circuit. The second differential analog output voltage has a value of zero at a specified magnetic field strength not equal to zero. A common-mode voltage associated with the second differential analog output voltage corresponds to a specified percentage of a supply voltage of the bridge circuit.

公开(公告)号：US20250060428A1

公开(公告)日：2025-02-20

申请号：US18932913

申请日：2024-10-31

Applicant: TDK Corporation

Inventor： Keisuke TAKASUGI ,  Kenzo MAKINO ,  Hiraku HIRABAYASHI ,  Masanori SAKAI

IPC: G01R33/09 ,  G01R15/14 ,  H10N50/80

Abstract: A magnetic sensor includes a first insulating layer, a second insulating layer, a third insulating layer, a lower coil element located on an opposite side of the first insulating layer from the second insulating layer, and a second MR element. The second MR element includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer are located on an opposite side of the third insulating layer from the second insulating layer. The first and third insulating layers each contain a first insulating material. The second insulating layer contains a second insulating material.

公开(公告)号：US12228621B2

公开(公告)日：2025-02-18

申请号：US17947654

申请日：2022-09-19

Applicant: TDK CORPORATION

Inventor： Kenkichi Anagawa ,  Shinichirou Mochizuki ,  Homare Tokida

IPC: G01R33/09 ,  G01R33/02

Abstract: A magnetic sensor includes at least one sensor main body; a detection circuit provided on the at least one sensor main body, the detection circuit including a magnetic detection element; and a plurality of sensor terminals provided on the at least one sensor main body. The plurality of sensor terminals include a plurality of signal terminals and a plurality of power supply terminals. The plurality of signal terminals are all disposed on a side of one end of the at least one sensor main body. The plurality of power supply terminals include at least one first terminal disposed on the side of the one end of the at least one sensor main body, and a plurality of second terminals disposed on a side of another end of the at least one sensor main body.

公开(公告)号：US20250052838A1

公开(公告)日：2025-02-13

申请号：US18366737

申请日：2023-08-08

Applicant: Allegro MicroSystems, LLC

Inventor： Paolo Campiglio ,  Noémie Belin ,  Pierrick Charlier

IPC: G01R33/09

Abstract: In one aspect, a bridge includes at least eight sets of sub-arrays. Each one of the at least eight sets of sub-arrays forms a corresponding one magnetoresistance element. Each one of the at least eight sets of sub-arrays has a reference direction. The at least eight sets of sub-arrays are arranged in a matrix on a die. A reference direction of each one of the at least eight sets of sub-arrays is different from a reference direction of at least one other of the at least eight sets of sub-arrays.

公开(公告)号：US12222409B2

公开(公告)日：2025-02-11

申请号：US17981838

申请日：2022-11-07

Applicant: TDK CORPORATION

Inventor： Kazuya Watanabe ,  Hiraku Hirabayashi

IPC: G01R33/00 ,  G01B7/14 ,  G01B7/30 ,  G01R15/20 ,  G01R19/00 ,  G01R33/09

Abstract: An inspection apparatus includes a stage having a placing surface, a first magnetic field generator, and a second magnetic field generator. The first magnetic field generator is configured to be changeable in orientation and to singly generate a first magnetic field. The second magnetic field generator is configured to be changeable in orientation and to singly generate a second magnetic field. The first and second magnetic field generators are configured to cooperatively generate a composite magnetic field in cooperation.

公开(公告)号：US12210075B2

公开(公告)日：2025-01-28

申请号：US18180600

申请日：2023-03-08

Applicant: Infineon Technologies AG

Inventor： Bernhard Endres

IPC: G01R33/09 ,  H01F1/00 ,  H01F10/32

Abstract: A tunnel magnetoresistance (TMR) sensing element includes a layer stack having a tantalum-nitride (TaN) layer; a reference layer system; a magnetic free layer having a magnetically free magnetization; and a tunnel barrier layer arranged between the reference layer system and the magnetic free layer. The reference layer system includes a pinned layer having a fixed pinned magnetization; a reference layer having a having a fixed reference magnetization; a coupling interlayer arranged between the pinned layer and the reference layer; and a natural antiferromagnetic (NAF) layer comprising iridium-manganese (IrMn), wherein the NAF layer is formed in direct contact with the TaN layer, wherein the NAF layer is configured to hold the fixed pinned magnetization in a first magnetic orientation and hold the fixed reference magnetization in a second magnetic orientation, and wherein the direct contact of the NAF layer with the TaN layer increases a blocking temperature of the NAF layer.

公开(公告)号：US20250024689A1

公开(公告)日：2025-01-16

申请号：US18767862

申请日：2024-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  The Board of Trustees of the Leland Stanford Junior University

Inventor： William San-Hsi HWANG ,  Shan Xiang WANG ,  Fen Xue ,  Wilman TSAI ,  Harsono SIMKA

IPC: H10B61/00 ,  G01R33/07 ,  G01R33/09 ,  H10N50/10 ,  H10N50/20

Abstract: An magnetoresistive random access memory (MRAM) device includes a magnetic tunnel junction, and a spin-orbit torque material. Based on a current applied to the spin-orbit torque material, the spin-orbit torque material generates spin polarization along one or multiple axes.

公开(公告)号：US12201030B2

公开(公告)日：2025-01-14

申请号：US18231414

申请日：2023-08-08

Applicant: Applied Materials, Inc.

Inventor： Minrui Yu ,  Wenhui Wang ,  Jaesoo Ahn ,  Jong Mun Kim ,  Sahil Patel ,  Lin Xue ,  Chando Park ,  Mahendra Pakala ,  Chentsau Chris Ying ,  Huixiong Dai ,  Christopher S. Ngai

IPC: H10N50/10 ,  G01R33/09 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

公开(公告)号：US12196825B2

公开(公告)日：2025-01-14

申请号：US18056490

申请日：2022-11-17

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Rainer Markus Schaller

IPC: G01R33/07 ,  G01R33/02 ,  G01R33/09

Abstract: A sensor device contains a first magnetic field sensor chip having a first sensor element. The first magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the first sensor element. The sensor device contains a second magnetic field sensor chip having a second sensor element. The second magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the second sensor element. The sensor device contains a current conductor configured to carry a measurement current that induces a magnetic field at the locations of the sensor elements. The magnetic field sensor chips and the current conductor are arranged relative to one another in such a way that an influence of a homogeneous magnetic stray field on the first components is compensated for upon difference formation or summation applied to the first components.

公开(公告)号：US20250004073A1

公开(公告)日：2025-01-02

申请号：US18709631

申请日：2022-12-02

Applicant: Allegro MicroSystems, LLC

Inventor： Nikita Strelkov ,  Andrey Timopheev ,  Léa Cuchet

IPC: G01R33/09

Abstract: The present disclosure concerns a magnetoresistive element comprising a reference layer having a reference magnetization oriented out-of-plane; a sense layer having a sense magnetization comprising a vortex configuration stable under the presence of an external magnetic field and reversibly movable in a direction out-of-plane relative to the reference magnetization when the external magnetic field varies in a direction out-of-plane; and a tunnel barrier layer between the reference layer and the sense layer. The sense layer has a thickness smaller than 200 nm. The sense layer comprises a ferromagnetic material configured such that the sense magnetization is between 300 and 1400 emu/cm3 and such that the sense layer has a perpendicular magnetic anisotropy field that is greater than 1 kOe (79.6×103 A/m). The present disclosure further concerns a magnetoresistive sensor comprising a plurality of the magnetoresistive element.