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公开(公告)号：US20240365676A1
公开(公告)日：2024-10-31
申请号：US18770678
申请日：2024-07-12
发明人： YA-LING LEE , TSANN LIN , HAN-JONG CHIA
CPC分类号： H10N50/10 , G01R33/093 , G01R33/098 , G11C11/161 , H10B61/00 , H10N50/01 , H10N50/80 , H10N50/85
摘要： A magnetic tunnel junction (MTJ) element is provided. The MTJ element includes a hard bias layer, a reference layer disposed over the hard bias layer, a tunnel barrier layer disposed over the reference layer, a free layer disposed over the tunnel barrier layer, and a diffusion barrier layer disposed over the free layer wherein the diffusion barrier layer comprises an amorphous and nonmagnetic film of a form X-Z, where X is Fe or Co and Z is Hf, Y, or Zr. The MTJ element in accordance with the present disclosure exhibits a low resistance desired for a low-power write operation, and a high TMR coefficient desired for a low bit-error-rate (BER) read operation.
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公开(公告)号：US12123926B2
公开(公告)日：2024-10-22
申请号：US17814883
申请日：2022-07-26
发明人： Sebastian Maerz
CPC分类号： G01R33/093 , G01R33/0005 , G01R33/0094 , G01R33/098
摘要： The present disclosure relates to a redundant current sensor (100), comprising, in a common chip package (20), a first integrated magnetoresistive sensor circuit (110A) and a second integrated magnetoresistive sensor circuit (110B).
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公开(公告)号：US20240345187A1
公开(公告)日：2024-10-17
申请号：US18751629
申请日：2024-06-24
申请人： TDK CORPORATION
IPC分类号： G01R33/09
CPC分类号： G01R33/09
摘要： A magnetic sensor includes an insulating layer, a coil element disposed on the insulating layer, and a first insulating film. The insulating layer includes a first inclined surface and a second inclined surface. The coil element includes a first side surface and a second side surface. The first side surface includes a first portion and a second portion, the second portion being disposed at a position farther from a top surface of a substrate than a position where the first portion is disposed. The first portion is inclined so as to intersect with the first and second inclined surfaces, and is also inclined so as to be closer to the second side surface at positions closer to the top surface of the substrate. The first insulating film covers the first portion.
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公开(公告)号：US20240334057A1
公开(公告)日：2024-10-03
申请号：US18028161
申请日：2021-10-05
申请人： LG INNOTEK CO., LTD.
发明人： Sang Ok PARK , Sang Jun MIN
CPC分类号： H04N23/6812 , G01R33/072 , G01R33/091 , H04N23/687 , G01R33/098
摘要： One embodiment comprises: a fixing part; a moving part including a substrate part arranged to be spaced from the fixing part, and an image sensor arranged on the substrate part; a shape memory alloy member which is coupled to the fixing part and the moving part, and which is electrically connected to the substrate part; a location sensing unit including first, second and third sensors arranged on the substrate part; and a control unit which supplies a driving signal to the shape memory alloy member, and which moves the moving part in the direction that is perpendicular to the optical axis or rotates the moving part around the optical axis by means of the shape memory alloy member.
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公开(公告)号：US12106790B2
公开(公告)日：2024-10-01
申请号：US17656306
申请日：2022-03-24
发明人： Alan Kalitsov , Derek Stewart , Ananth Kaushik , Gerardo Bertero
CPC分类号： G11C11/161 , G01R33/093 , G11C11/1673 , G11C11/1675 , H01F10/3286 , H10B61/00 , H10N50/10 , H10N50/80 , H10N50/85
摘要： A magnetoresistive memory cell includes a magnetoresistive layer stack containing a reference layer, a nonmagnetic spacer layer, and a free layer. A ferroelectric material layer having two stable ferroelectric states is coupled to a strain-modulated ferromagnetic layer to alter a sign of magnetic exchange coupling between the strain-modulated ferromagnetic layer and the free layer. The strain-modulated ferromagnetic layer may be the reference layer or a perpendicular magnetic anisotropy layer that is located proximate to the ferroelectric material layer. The magnetoresistive memory cell may be configured as a three-terminal device or as a two-terminal device, and may be configured as a tunneling magnetoresistance (TMR) device or as a giant magnetoresistance (GMR) device.
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6.发明公开公开(公告)号：US20240310459A1
公开(公告)日：2024-09-19
申请号：US18350584
申请日：2023-07-11
发明人： Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Rohan Babu NAGABHIRAVA , Kuok San HO , Hisashi TAKANO , Son T. LE , Nam Hai PHAM , Huy H. HO
CPC分类号： G01R33/075 , G01R33/0052 , G01R33/093
摘要： The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.
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公开(公告)号：US12088201B2
公开(公告)日：2024-09-10
申请号：US18159659
申请日：2023-01-25
申请人： Dexcom, Inc.
发明人： Nicholas Kalfas , Gary Thomas Neel
IPC分类号： H02M3/158 , A61B5/00 , G01R19/165 , G01R33/09 , A61B5/145
CPC分类号： H02M3/158 , A61B5/6833 , G01R19/16576 , G01R33/098 , A61B5/14546 , A61B2560/0209
摘要： Aspects of the present disclosure provide a power activation module for powering one or more wearable electronic components. The power activation module includes a switch configured to provide a path for current flow between a battery associated with the power activation module, the one or more wearable electronic components, and a ground terminal. The power activation module also includes a sensor configured to detect whether a signal is applied to the sensor and, based on the detection, output a first digital output signal for controlling, at least in part, the switch to control the current flow from the battery to the one or more wearable electronic components. The power activation module also includes a lock pin configured to receive a lock signal, wherein when the lock signal is received, the switch is locked to allow current flow from the battery to the one or more wearable electronic components.
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公开(公告)号：US12081176B2
公开(公告)日：2024-09-03
申请号：US17904515
申请日：2021-02-09
发明人： Zhimin Zhou , James Geza Deak
CPC分类号： H03F1/34 , G01R33/0094 , G01R33/091
摘要： A gain-controllable magnetoresistive analog amplifier includes a substrate in an X-Y plane, an output signal magnetoresistive sensor on the substrate, and an input signal coil and a gain adjustment coil. The input signal coil and the gain adjustment coil are respectively on two side surfaces of the sensor. The gain adjustment coil is used to input a gain signal by the generation of a gain magnetic field, in order to set the gain the magnetic field is applied along a magnetization direction of a free layer of the output signal magnetoresistive sensor. The input signal coil is used for inputting a current signal to generate an input magnetic field, in order to apply the input magnetic field to a magnetization direction of a pinned layer of the output signal magnetoresistive sensor. This amplifier provides isolation between input signals, output signals, and controllable gain signals.
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9.发明授权公开(公告)号：US12072398B2
公开(公告)日：2024-08-27
申请号：US18336133
申请日：2023-06-16
申请人： TDK Corporation
发明人： Yongfu Cai
CPC分类号： G01R33/098 , G01D5/145
摘要： A magnetic sensor device includes a magnetic field converter that receives an input magnetic field input along a first direction and outputs an output magnetic field along a second direction, which is orthogonal to the first direction. A magnetic field detector is provided at a position where the output magnetic field is applied. A magnetic shield shields external magnetic fields along a third direction, which is orthogonal to both the first direction and the second direction. When viewed along the first direction, the magnetic field converter has a shape such that the length in the third direction is greater than the length in the second direction. When viewed along the first direction, the magnetic shield is provided at a position overlapping the magnetic field converter and the magnetic field detector, and the magnetic field transmittance of the external magnetic field is 1˜30%.
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公开(公告)号：US20240280651A1
公开(公告)日：2024-08-22
申请号：US18649207
申请日：2024-04-29
申请人： TDK CORPORATION
CPC分类号： G01R33/093 , G01R33/0047
摘要： A magnetic sensor includes an insulating layer, a first MR element, and a second MR element. The insulating layer includes a protruding surface including first and second inclined surfaces. Each of the first and second MR elements includes a magnetization pinned layer and a free layer. The magnetization pinned layer and the free layer of the first MR element are disposed on the first inclined surface. The magnetization pinned layer and the free layer of the second MR element are disposed on the second inclined surface. The dimension of the protruding surface in a direction parallel to the Z direction is in the range of 1.4 μm to 3.0 μm.
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