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公开(公告)号：US11522126B2
公开(公告)日：2022-12-06
申请号：US16601250
申请日：2019-10-14
Applicant: Applied Materials, Inc.
Inventor： Lin Xue , Jaesoo Ahn , Sahil Patel , Chando Park , Mahendra Pakala
Abstract: A film stack for a magnetic tunnel comprises a substrate, a magnetic reference layer disposed over the substrate, and a tunnel barrier layer disposed over the magnetic reference layer. The film stack further comprises a magnetic storage layer disposed over the tunnel barrier layer, and a capping layer disposed over the magnetic storage layer. Further, the film stack comprises at least one protection layer disposed between the magnetic reference layer and the tunnel barrier layer and disposed between the magnetic storage layer and the capping layer. Additionally, a material forming the at least one protection layer differs from at least one of a material forming the magnetic reference layer and a material forming the magnetic storage layer.
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公开(公告)号：US20210111338A1
公开(公告)日：2021-04-15
申请号：US16601250
申请日：2019-10-14
Applicant: Applied Materials, Inc.
Inventor： Lin XUE , Jaesoo Ahn , Sahil Patel , Chando Park , Mahendra Pakala
Abstract: A film stack for a magnetic tunnel comprises a substrate, a magnetic reference layer disposed over the substrate, and a tunnel barrier layer disposed over the magnetic reference layer. The film stack further comprises a magnetic storage layer disposed over the tunnel barrier layer, and a capping layer disposed over the magnetic storage layer. Further, the film stack comprises at least one protection layer disposed between the magnetic reference layer and the tunnel barrier layer and disposed between the magnetic storage layer and the capping layer. Additionally, a material forming the at least one protection layer differs from at least one of a material forming the magnetic reference layer and a material forming the magnetic storage layer.
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公开(公告)号：US11723283B2
公开(公告)日：2023-08-08
申请号：US16871779
申请日：2020-05-11
Applicant: Applied Materials, Inc.
Inventor： Minrui Yu , Wenhui Wang , Jaesoo Ahn , Jong Mun Kim , Sahil Patel , Lin Xue , Chando Park , Mahendra Pakala , Chentsau Chris Ying , Huixiong Dai , Christopher S. Ngai
CPC classification number: H10N50/10 , G01R33/095 , G01R33/098 , G11C11/161 , H10B61/00 , H10N50/85 , H10N52/01 , H10N52/80
Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.
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公开(公告)号：US12201030B2
公开(公告)日：2025-01-14
申请号：US18231414
申请日：2023-08-08
Applicant: Applied Materials, Inc.
Inventor： Minrui Yu , Wenhui Wang , Jaesoo Ahn , Jong Mun Kim , Sahil Patel , Lin Xue , Chando Park , Mahendra Pakala , Chentsau Chris Ying , Huixiong Dai , Christopher S. Ngai
Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.
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