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1.
公开(公告)号:US12102011B2
公开(公告)日:2024-09-24
申请号:US17999578
申请日:2021-05-27
摘要: A magnetic sensor including a plurality of magnetoresistive elements; each magnetoresistive element including a ferromagnetic layer having a magnetization that is orientable at or above a threshold temperature; the magnetic sensor further includes a plasmonic structure destined to be irradiated by electromagnetic radiation and including a spatially periodic plasmonic array of metallic structures. The period of the plasmonic array and the lateral dimension of the metallic structures are adjusted to obtain plasmon resonance of the plasmonic structure for a given wavelength of the electromagnetic radiation. The plasmonic array is arranged in the magnetic sensor such as to heat the first ferromagnetic layer at or above the threshold temperature, from the enhanced absorption of the electromagnetic radiation by plasmon resonance. The present disclosure further concerns a system including the sensor and an emitting device configured to emit electromagnetic radiation.
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公开(公告)号:US20240210498A1
公开(公告)日:2024-06-27
申请号:US18555075
申请日:2022-04-04
CPC分类号: G01R33/093 , G01R33/098 , G01R33/1284 , H01F10/3268 , H10N50/10 , G11C11/161
摘要: A method to calculate performance of a magnetic element including a reference bilayer including a ferromagnetic reference layer having a reference magnetization and an antiferromagnetic layer pining the reference magnetization by exchange-bias, the antiferromagnetic layer including a metallic polycrystalline material having a grain volume distribution; the method comprising: measuring an exchange-bias field (Hex) of the antiferromagnetic layer as a function of temperature; fitting a grain volume distribution function to the measured exchange-bias fields (Hex) to determine parameters characterizing the volume distribution function; calculating a variation in the direction of the reference magnetization as a function of a direction of an exposure magnetic field (H); and calculating the exchange bias field (Hex) for any value of the in-plane exposure magnetic field (H).
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