-
公开(公告)号：US12130243B2
公开(公告)日：2024-10-29
申请号：US17685679
申请日：2022-03-03
IPC分类号： G01N21/958 , G01N21/21 , G01N21/84 , G01N21/88 , G01N21/896 , G02B26/10
CPC分类号： G01N21/958 , G01N21/21 , G01N21/8422 , G01N21/8806 , G02B26/101 , G01N2021/215 , G01N2021/8848 , G01N2021/8965
摘要： An angle independent optical surface inspector capable of generating a light beam, directing the light beam to a sample, and de-scanning a reflected light beam that is reflected from the sample, thereby generating a first de-scanned light beam. The de-scanning is performed at approximately one focal length of a de-scanning lens from an irradiation location where the light beam irradiates the sample. The optical inspector also capable of focusing the first de-scanned light beam, thereby generating a focused light beam, and measuring the location of the focused light beam. The measuring of the location is performed at approximately one focal length of a focusing lens from the focusing lens. The incident angle of the light beam is within ten degrees of Brewster's angle. The focusing is performed by an achromatic lens.
-
公开(公告)号：US20240337590A1
公开(公告)日：2024-10-10
申请号：US18426319
申请日：2024-01-29
申请人： NOVA LTD.
发明人： Dror SHAFIR , Gilad BARAK , Shay WOLFLING , Michal Haim YACHINI , Matthew SENDELBACH , Cornel BOZDOG
CPC分类号： G01N21/21 , G01N21/211 , G01N2021/4792 , G01N2201/061 , G01N2201/0683
摘要： A method and system are presented for use in measuring on patterned samples, aimed at determining asymmetry in the pattern. A set of at least first and second measurements on a patterned region of a sample is performed, where each of the measurements comprises: directing illuminating light onto the patterned region along an illumination channel and collecting light reflected from the illuminated region propagating along a collection channel to be detected, such that detected light from the same patterned region has different polarization states which are different from polarization of the illuminating light, and generating a measured data piece indicative of the light detected in the measurement. Thus, at least first and second measured data pieces are generated for the at least first and second measurements on the same patterned region. The at least first and second measured data pieces are analyzed and output data is generated being indicative of a condition of asymmetry in the patterned region.
-
公开(公告)号：US12105431B2
公开(公告)日：2024-10-01
申请号：US17584335
申请日：2022-01-25
申请人： KLA Corporation
发明人： Itay Gdor , Yuval Lubashevsky , Alon Alexander Volfman , Daria Negri , Yevgeniy Men , Elad Farchi
CPC分类号： G03F7/70633 , G01N21/211 , G03F7/706849 , H01L22/12
摘要： Metrology is performed on a semiconductor wafer using a system with an apodizer. A spot is formed on the semiconductor wafer with a diameter from 2 nm to 5 nm. The associated beam of light has a wavelength from 400 nm to 800 nm. Small target measurement can be performed at a range of optical wavelengths.
-
4.发明授权公开(公告)号：US12105018B2
公开(公告)日：2024-10-01
申请号：US17632035
申请日：2020-07-30
发明人： Takashi Uchida
CPC分类号： G01N21/211 , C08G65/336 , G01B21/08 , G01J4/04 , G01N21/41 , G01Q60/24
摘要： Provided is a method capable of precisely, reproducibly and directly measuring, by an ellipsometry method, optical constants (refractive index n, extinction coefficient κ) of a fluorine-containing organosilicon compound thin film having a homogeneous surface with a small surface roughness and haze value. The method for measuring the optical constants of the thin film of the fluorine-containing organosilicon compound, includes:
a step of forming the thin film of the fluorine-containing organosilicon compound on a base material, the thin film having, as surface roughnesses, an arithmetic mean roughness of smaller than 1.0 nm and a root mean square roughness of smaller than 2.0 nm, a haze value of smaller than 0.3 and a film thickness of 3 to 10 nm; and
a step of measuring the optical constants of the thin film formed on the base material by the ellipsometry method.-
公开(公告)号：US20240219302A1
公开(公告)日：2024-07-04
申请号：US18289130
申请日：2022-05-03
申请人： Bar-Ilan University
发明人： Amos DANIELLI , Shmuel BURG
CPC分类号： G01N21/6428 , G01N21/274 , G01N21/645 , G01N2021/218
摘要： An assay method for target molecules in a sample using optical emission from magnetic beads, comprising:
a) preparing the magnetic beads so, if excited, they produce optical emission as a consequence of contact between the beads, reporter molecules and target molecules in the sample;
b) providing the prepared magnetic beads in a solution in a container, with one or more magnets producing a magnetic field inside the container that causes the beads to aggregate into a clump inside the container in less than 30 seconds;
c) exciting the optical emission from the magnetic beads in the clump; and
d) measuring the optical emission from the magnetic beads in the clump.-
6.发明公开公开(公告)号：US20240201073A1
公开(公告)日：2024-06-20
申请号：US18231688
申请日：2023-08-08
申请人： KLA Corporation
发明人： Shankar Krishnan , Kaichun Yang , Xi Chen
IPC分类号： G01N21/21 , G01N21/956 , G01N21/958
CPC分类号： G01N21/211 , G01N21/956 , G01N21/958 , G01N2021/213
摘要： Methods and systems for performing spectroscopic ellipsometry (SE) measurements of surface structures of optical elements fabricated on transparent substrates are presented herein. The SE measurement system is configured to detect light from the measured structures without contamination from light reflected from the backside surface of the transparent substrate. Surface structures of optical elements include film structures and grating structures fabricated on thin transparent substrates. The SE based measurement system is configured with a relatively large illumination Numerical Aperture (NA) and relatively high demagnification from the illumination source to the measurement spot on the optically transparent substrate. This configuration results in a relatively small measurement spot size and small depth of focus that minimizes the amount of light reflected from the backside of the optically transparent substrate. In addition, a relatively small collection aperture size further minimizes backside reflected light from reaching the detector.
-
公开(公告)号：US20240201071A1
公开(公告)日：2024-06-20
申请号：US18286602
申请日：2022-01-25
申请人： Park Systems GmbH
CPC分类号： G01N21/21 , G01N21/255 , G01N2201/0691
摘要： A polarization measuring device is operated by passing light having a predetermined input polarization state to a sample for a potentially polarization changing interaction and from the sample through a polarization selective analyzer and to an intensity detector. The method proceeds by varying an angle between the output polarization state of the light emanating from the sample and the analyzer. The wavelength of the light reaching the intensity detector is varied, and a plurality of intensity measurements are performed successively at different constellations of polarization. Spectral modulation states and corresponding intensity values are stored together with polarization and spectral values representing the corresponding constellation. The polarization modulation and the spectral modulation are performed simultaneously and continuously, and during a single, monotonic variation of the polarization modulation state, the spectral modulation state is varied plural times and during each spectral modulation period (τλ) plural successive intensity measurements are performed.
-
公开(公告)号：US20240159656A1
公开(公告)日：2024-05-16
申请号：US18503783
申请日：2023-11-07
申请人： Onto Innovation Inc.
IPC分类号： G01N21/21
CPC分类号： G01N21/211
摘要： Complex three-dimensional structures in semiconductor devices are measured using Mueller matrix paired off-diagonal elements to generate machine learning predictions of asymmetric parameters of the device and determine dimensional parameters based on one or more Mueller matrix elements and the asymmetric parameters. The measurements of the device may be performed at different azimuth angles selected based on sensitivity to the asymmetric parameters and the dimensional parameters. Additionally, the Mueller matrix elements may be generated based on measurements performed at azimuth angles that are 180° apart to eliminate asymmetric noise from the measurement tool. One or more models of the device may be used with the Mueller matrix elements to generate dimensional parameter information and optionally preliminary asymmetrical parameters. The determined asymmetric parameters may be fed forward to the one or more models for determining the dimensional parameters to suppress a correlation between dimensional parameters and asymmetric parameters of the device.
-
9.发明公开公开(公告)号：US20240142758A1
公开(公告)日：2024-05-02
申请号：US18407012
申请日：2024-01-08
CPC分类号： G02B21/0092 , G01J4/04 , G01N21/21 , G01N2021/8477 , G02B21/0068
摘要： A polarimeter and a method of analyzing and imaging microstructural material orientation of a polished reflective sample are disclosed. The polarimeter, which is a partial Mueller-matrix polarimeter (pMMP), accesses multiple independent polarization channels by employing two independent polarization modulators configured to switch serially among multiple independent settings, wherein the combination of the settings of the first and second polarization modulators defines an independent polarization channel, and wherein an imaging detector produces a set of polarization images that are synchronized with the channels formed by the polarization modulators; and wherein a processor connected with a memory executes a classification algorithm stored in the memory that maps the set of polarization images to one or more material orientation images by mapping the set of values for each detector pixel corresponding to the set of polarization images to a value of material orientation at each pixel coordinate using a model. The invention can thereby create material microstructural orientation images of diverse anisotropic materials, for instance polymer domains, fiber bundles or plys, and crystalline grains.
-
公开(公告)号：US11972986B2
公开(公告)日：2024-04-30
申请号：US16981048
申请日：2019-03-13
申请人： SILTRONIC AG
发明人： Michael Boy , Christina Kruegler
CPC分类号： H01L22/20 , C30B33/08 , G01N21/21 , G01N21/9505 , H01L21/324 , H01L21/67288
摘要： Semiconductor wafers are produced by a process wherein a single-crystal ingot of semiconductor material is pulled and at least one wafer is removed from the ingot, wherein the wafer is subjected to a thermal treatment comprising a heat treatment step in which a radial temperature gradient acts on the wafer, wherein an analysis of the wafer of semiconductor material with respect to the formation of defects in the crystal lattice, so-called stress fields, is carried out.
-
-
-
-
-
-
-
-
-
搜索结果
2201 条记录 (耗时 0.033 秒)
