OPTICAL PHASE MEASUREMENT SYSTEM AND METHOD

    公开(公告)号:US20230130231A1

    公开(公告)日:2023-04-27

    申请号:US17935930

    申请日:2022-09-27

    Applicant: NOVA LTD.

    Abstract: A method for use in optical measurements on patterned structures, the method including performing a number of optical measurements on a structure with a measurement spot configured to provide detection of light reflected from an illuminating spot at least partially covering at least two different regions of the structure, the measurements including detecting light reflected from the at least part of the at least two different regions within the measurement spot, the detected light including interference of at least two complex electric fields reflected from the at least part of the at least two different regions, and being therefore indicative of a phase response of the structure, carrying information about properties of the structure.

    METHOD AND SYSTEM FOR OPTICAL CHARACTERIZATION OF PATTERNED SAMPLES

    公开(公告)号:US20240337590A1

    公开(公告)日:2024-10-10

    申请号:US18426319

    申请日:2024-01-29

    Applicant: NOVA LTD.

    Abstract: A method and system are presented for use in measuring on patterned samples, aimed at determining asymmetry in the pattern. A set of at least first and second measurements on a patterned region of a sample is performed, where each of the measurements comprises: directing illuminating light onto the patterned region along an illumination channel and collecting light reflected from the illuminated region propagating along a collection channel to be detected, such that detected light from the same patterned region has different polarization states which are different from polarization of the illuminating light, and generating a measured data piece indicative of the light detected in the measurement. Thus, at least first and second measured data pieces are generated for the at least first and second measurements on the same patterned region. The at least first and second measured data pieces are analyzed and output data is generated being indicative of a condition of asymmetry in the patterned region.

    METROLOGY TECHNIQUE FOR SEMICONDUCTOR DEVICES

    公开(公告)号:US20240271926A1

    公开(公告)日:2024-08-15

    申请号:US18566919

    申请日:2022-06-03

    Applicant: NOVA LTD.

    CPC classification number: G01B11/06

    Abstract: A method for semiconductor device metrology. The method may include creating a time-domain representation of wavelength-domain measurement data of light reflected by a three dimensional (3D) patterned structure of a semiconductor device; selecting one or more relevant peaks of the time-domain representation and at least one irrelevant portion of the time-domain representation. One or more relevant peaks occur during one or more relevant time periods; and are associated with corresponding relevant reference peaks that are associated with different versions of a reference 3D patterned structure.

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