公开(公告)号：US20240271926A1

公开(公告)日：2024-08-15

申请号：US18566919

申请日：2022-06-03

Applicant: NOVA LTD.

Inventor： Dror SHAFIR ,  Zvi Gorohovsky ,  Jacob Ofek ,  Daphna Peimer ,  Tal Heilpern ,  Dana Szafranek ,  Gilad BARAK ,  Smadar Ferber

IPC: G01B11/06

CPC classification number: G01B11/06

Abstract: A method for semiconductor device metrology. The method may include creating a time-domain representation of wavelength-domain measurement data of light reflected by a three dimensional (3D) patterned structure of a semiconductor device; selecting one or more relevant peaks of the time-domain representation and at least one irrelevant portion of the time-domain representation. One or more relevant peaks occur during one or more relevant time periods; and are associated with corresponding relevant reference peaks that are associated with different versions of a reference 3D patterned structure.

公开(公告)号：US11366398B2

公开(公告)日：2022-06-21

申请号：US17254357

申请日：2019-07-18

Applicant: NOVA LTD.

Inventor： Gilad Barak ,  Michael Chemama ,  Smadar Ferber ,  Yanir Hainick ,  Boris Levant ,  Ze'Ev Lindenfeld ,  Dror Shafir ,  Yuri Shirman ,  Elad Schleifer

IPC: G03F7/20 ,  G01B11/06

Abstract: Semiconductor device metrology including creating a time-domain representation of wavelength-domain measurement data of light reflected by a patterned structure of a semiconductor device, selecting an earlier-in-time portion of the time-domain representation that excludes a later-in-time portion of the time-domain representation, and determining one or more measurements of one or more parameters of interest of the patterned structure by performing model-based processing using the earlier-in-time portion of the time-domain representation.