公开(公告)号：US20250011916A1

公开(公告)日：2025-01-09

申请号：US18887099

申请日：2024-09-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Masashi TSUBUKU

IPC: C23C14/08 ,  C23C14/34 ,  C30B23/00 ,  C30B23/02 ,  C30B29/22 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

Abstract: A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided. A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part.

公开(公告)号：US20240417275A1

公开(公告)日：2024-12-19

申请号：US18723511

申请日：2022-07-29

Applicant: GEM (WUXI) ENERGY MATERIALS CO., LTD.

Inventor： Kaihua XU ,  Wei LI ,  Dechong LIU ,  Jun XIE ,  Ningjing LIAO ,  Yang SHI ,  Xiaoyan ZHOU ,  Yujun CHEN ,  Shiguo XU

IPC: C01G53/00 ,  C30B29/22 ,  H01M4/02 ,  H01M4/36 ,  H01M4/525 ,  H01M4/62 ,  H01M10/42

Abstract: A method of preparing lithium nickel manganese cobalt oxide high-nickel single-crystal positive electrode material comprises the following steps: mixing and ball milling nickel cobalt manganese hydroxide with a lithium source, zirconium oxide, tungsten oxide, and sodium carbonate, then performing primary sintering, pulverizing, and then obtaining an lithium nickel manganese cobalt oxide high-nickel single-crystal positive electrode material intermediate, the temperature of the primary sintering being 50-150° C. higher than a normal sintering temperature; and evenly mixing the lithium nickel manganese cobalt oxide high-nickel single-crystal positive electrode material intermediate and a coating agent, and then performing secondary sintering to obtain the lithium nickel manganese cobalt oxide high-nickel single-crystal positive electrode material.

公开(公告)号：US20240280878A1

公开(公告)日：2024-08-22

申请号：US18583583

申请日：2024-02-21

Applicant: GAMDAN Optics, Inc.

Inventor： William M. Grossman ,  Dennis J. Garrity ,  Hui Cai

IPC: G02F1/355 ,  C30B29/22 ,  C30B33/06 ,  G02F1/37

CPC classification number: G02F1/3551 ,  C30B29/22 ,  C30B33/06 ,  G02F1/37

Abstract: In one embodiment, the present disclosure includes a method of making an optical component. Planes of optical materials are diffusion bonded to make a single larger nonlinear optical device. The bond plane may be configured at an angle to an input wave passing through the diffusion bonded structure. In one embodiment, the optical material is Lithium triborate (LBO). In some embodiments, a plurality of optical materials are diffusion bonded in one or more dimensions to produce a larger optical device. In some embodiments, the larger optical device is used in a laser system. In one embodiment, the present disclosure includes a fusion reactor including a laser system comprising diffusion bonded nonlinear optical materials.

公开(公告)号：US20240229296A9

公开(公告)日：2024-07-11

申请号：US18279458

申请日：2022-02-17

Applicant: Mitsui Mining & Smelting Co., Ltd.

Inventor： Sakiko YABU ,  Tokiharu OYAMA ,  Haruki MATSUO ,  Kentaro SOMA ,  Yasunori TABIRA ,  Shingo IDE

IPC: C30B29/22 ,  C30B23/08 ,  G01N27/407

CPC classification number: C30B29/22 ,  C30B23/08 ,  G01N27/4073 ,  H01M8/1246

Abstract: A layered body includes: a substrate; and an oxide portion positioned on the substrate. An oxide that constitutes the oxide portion contains at least two or more rare-earth elements: silicon; and oxygen. The oxide that is contained in the oxide portion exhibits a diffraction peak derived from a (004) plane at a position of 2θ=51.9°±0.9° in an X-ray diffraction pattern, and has an apatite crystal structure. The ratio of linear expansion coefficient of the oxide that constitutes the oxide portion in an a-axis direction relative to linear expansion coefficient of the substrate is 0.15 or more and 1.45 or less.

公开(公告)号：US11868022B2

公开(公告)日：2024-01-09

申请号：US17415211

申请日：2019-12-16

Applicant: IPG PHOTONICS CORPORATION

Inventor： Dan Perlov ,  Alexander Zaytsev ,  Anatolii Zamkov ,  Nikita Radionov ,  Aleksandr Cherepakhin ,  Nikolay Evtikhiev ,  Andrey Sadovskiy

IPC: G02F1/355 ,  G02F1/35 ,  C30B29/22 ,  C30B33/00 ,  H01S3/109

CPC classification number: G02F1/3551 ,  C30B29/22 ,  C30B33/00 ,  G02F1/354 ,  G02F1/3548 ,  H01S3/109

Abstract: An SrB4O7 or PbB4O7 crystal is configured with a plurality of domains with respective periodically alternating polarity of the crystal axis so that the disclosed crystal is capable of quasi-phasematching (QPM). The disclosed crystal is manufactured by a method including patterning a surface of a crystal block of SrB4O7 or PbB4O7, thereby providing patterned uniformly dimensioned regions with a uniform polarity sign on the surface. The method further includes generating a disturbance on the patterned surface, thereby inverting a sign of crystal polarity of every other region to form the SrB4O7 or SrB4O7 crystal with a plurality of domains with alternating polarity enabling a QPM mechanism.

公开(公告)号：US20230217832A1

公开(公告)日：2023-07-06

申请号：US18179071

申请日：2023-03-06

Applicant: Soitec

Inventor： Bruno Ghyselen ,  Ionut Radu ,  Jean-Marc Bethoux

IPC: H10N30/853 ,  C30B25/18 ,  C30B29/22 ,  H10N30/20 ,  H10N30/072 ,  H10N30/079 ,  H10N30/085 ,  H10N30/00 ,  H03H3/02 ,  H03H3/08 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64

CPC classification number: H10N30/8542 ,  C30B25/186 ,  C30B29/22 ,  H10N30/20 ,  H10N30/072 ,  H10N30/079 ,  H10N30/085 ,  H10N30/10516 ,  H03H3/02 ,  H03H3/08 ,  H03H9/25 ,  H03H9/54 ,  H03H9/64 ,  C30B29/30

Abstract: A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.

公开(公告)号：US11661674B1

公开(公告)日：2023-05-30

申请号：US16890084

申请日：2020-06-02

Applicant: Government of the United States, as represented by the Secretary of the Air Force

Inventor： James M. Mann ,  Thomas A. Bowen ,  Eric M. Hunt

IPC: C30B29/00 ,  C30B29/22 ,  C30B7/10 ,  C01F17/32 ,  C01G43/01

CPC classification number: C30B29/22 ,  C01F17/32 ,  C30B7/10 ,  C01G43/01

Abstract: The present invention relates to single crystalline RbUO3, hydrothermal growth processes of making such single crystals and methods of using such single crystals. In particular, Applicants disclose single crystalline RbUO3 single crystalline RbUO3 in the Pm-3m space group. Unlike other powdered RbUO3, Applicants' single crystalline RbUO3 has a sufficient crystal size to be characterized and used in the fields of neutron detection, radiation-hardened electronics, nuclear forensics, nuclear engineering photovoltaics, lasers, light-emitting diodes, photoelectrolysis and magnetic applications.

公开(公告)号：US11651881B2

公开(公告)日：2023-05-16

申请号：US16650647

申请日：2018-09-27

Applicant: POWDERTECH CO., LTD.

Inventor： Takashi Kojima ,  Kazutaka Ishii ,  Takao Sugiura ,  Tetsuya Igarashi ,  Koji Aga

IPC: H01F1/34 ,  H01F1/33 ,  H01F1/37 ,  H01F27/255 ,  C01G49/00 ,  C30B29/22

CPC classification number: H01F1/344 ,  C01G49/009 ,  C01G49/0072 ,  C30B29/22 ,  H01F1/33 ,  H01F1/37 ,  C01P2004/04 ,  C01P2004/32 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2004/64 ,  C01P2006/42 ,  H01F27/255 ,  Y10T428/32

Abstract: Mn—Zn ferrite particles according to the present invention contain 44-60% by mass of Fe, 10-16% by mass of Mn and 1-11% by mass of Zn. The ferrite particles are single crystal bodies having an average particle diameter of 1-2,000 nm, and have polyhedral particle shapes, while having an average sphericity of 0.85 or more but less than 0.95.

公开(公告)号：US11643752B2

公开(公告)日：2023-05-09

申请号：US16739105

申请日：2020-01-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro Miyano ,  Naoya Ryoki ,  Akihiko Ishibashi ,  Masaki Nobuoka

IPC: C30B29/22 ,  C30B15/20

CPC classification number: C30B29/22 ,  C30B15/20

Abstract: A ScAlMgO4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO4 monocrystalline substrate are provided. The ScAlMgO4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.

公开(公告)号：US11637015B2

公开(公告)日：2023-04-25

申请号：US17491637

申请日：2021-10-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara

IPC: H01L21/02 ,  C30B23/08 ,  C23C14/08 ,  C01G15/00 ,  B82Y30/00 ,  C23C14/34 ,  C30B29/22 ,  H01J37/34 ,  C30B1/04 ,  C30B28/02 ,  C30B29/68 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

Abstract: A method for manufacturing a sputtering target with which an oxide semiconductor film with a small amount of defects can be formed is provided. Alternatively, an oxide semiconductor film with a small amount of defects is formed. A method for manufacturing a sputtering target is provided, which includes the steps of: forming a polycrystalline In-M-Zn oxide (M represents a metal chosen among aluminum, titanium, gallium, yttrium, zirconium, lanthanum, cesium, neodymium, and hafnium) powder by mixing, sintering, and grinding indium oxide, an oxide of the metal, and zinc oxide; forming a mixture by mixing the polycrystalline In-M-Zn oxide powder and a zinc oxide powder; forming a compact by compacting the mixture; and sintering the compact.