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    RAMO4 substrate and method of manufacture thereof, and group III nitride semiconductor
    3.
    发明授权
    RAMO4 substrate and method of manufacture thereof, and group III nitride semiconductor 有权

    公开(公告)号：US11441237B2

    公开(公告)日：2022-09-13

    申请号：US16691542

    申请日：2019-11-21

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Naoya Ryoki ,  Kentaro Miyano ,  Masaki Nobuoka ,  Akihiko Ishibashi

    IPC: H01L29/15 ,  C30B29/26 ,  H01L29/20 ,  H01L29/205 ,  C30B25/18 ,  H01L21/02 ,  C30B15/22 ,  C30B29/40

    Abstract: A RAMO4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

    Light emitting device, manufacturing method therefor, and waveguide structure
    5.
    发明授权
    Light emitting device, manufacturing method therefor, and waveguide structure 有权

    公开(公告)号：US12282199B2

    公开(公告)日：2025-04-22

    申请号：US17807889

    申请日：2022-06-21

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Takehiro Asahi ,  Naoya Ryoki ,  Yukio Nishikawa ,  Yoshio Okayama

    IPC: F21V8/00 ,  G02B6/32 ,  G02B6/42 ,  G02F1/377

    Abstract: A light emitting device includes a light source and a waveguide structure. The light source emits light having a directionality. The waveguide structure includes an optical waveguide and an exterior part. The optical waveguide has an incident end surface and an emission end surface, converts a wavelength of the light incident from the incident end surface, and emits the light from the emission end surface. The exterior part is optically transparent and covers the optical waveguide such that the incident end surface and the emission end surface are exposed from the exterior part. The optical waveguide is elongated in a length direction. The length direction of the optical waveguide is inclined at a predetermined angle with respect to an optical axis of the light in a predetermined plane including the length direction of the optical waveguide and the optical axis of the light. The predetermined angle is set to allow the light to propagate in the optical waveguide with total internal reflection at a boundary surface between the optical waveguide and the exterior part.

    Wavelength converter
    7.
    发明授权
    Wavelength converter 有权

    公开(公告)号：US10989985B2

    公开(公告)日：2021-04-27

    申请号：US16831532

    申请日：2020-03-26

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Kentaro Miyano ,  Naoya Ryoki ,  Akihiko Ishibashi ,  Masaki Nobuoka

    IPC: G02F1/355 ,  G02F1/35 ,  G02F1/37

    Abstract: Provided herein is a wavelength converter capable of producing shorter wavelengths by wavelength conversion than in related art. A wavelength converter of the present disclosure includes: a first layer formed of a single crystal represented by general formula RAMO4; and a second layer formed of a single crystal represented by the general formula RAMO4 and having a direction of polarization reversed 180° from a direction of polarization of the first layer, wherein, in the general formula, R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd.

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