公开(公告)号：US11509119B2

公开(公告)日：2022-11-22

申请号：US17126196

申请日：2020-12-18

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroshi Ohno

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/14 ,  H01S5/32 ,  H01S5/323

Abstract: In a WBC system of the present disclosure, an LD bar array constituted by a plurality of LD bars is configured such that a main axis direction of an off-angle of at least one LD bar is reversed with respect to a main axis direction of an off-angle of the other LD bar. By doing so, even in the LD bar in which a wavelength distribution in a wafer exists, a difference between a designed lock wavelength and a gain peak wavelength can be kept within a range where an LD oscillation due to an external resonance is possible for all emitters in the LD bar, thereby an output in the WBC system can be maximized.

公开(公告)号：US10763395B2

公开(公告)日：2020-09-01

申请号：US16295115

申请日：2019-03-07

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroshi Ohno ,  Kenya Yamashita

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/32

Abstract: A flip-chip light emitting diode element capable of reducing lateral resistance. The flip-chip light emitting diode element includes a stacked body structure configured by sequentially stacking a first n-type group III nitride semiconductor layer having a carrier concentration that is at least 1×1019 cm−3 but less than 3×1020 cm−3, a second n-type group III nitride semiconductor layer having a carrier concentration that is at least 5×1017 cm−3 but less than 1×1019 cm−3, a light-emitting layer formed by a group III nitride semiconductor, and a p-type group III nitride semiconductor layer. A height of unevenness on an interface between the first n-type group III nitride semiconductor layer and the second n-type group III nitride semiconductor layer is greater than that of unevenness of an interface between the second n-type group III nitride semiconductor layer and the light emitting layer.

公开(公告)号：US09547225B2

公开(公告)日：2017-01-17

申请号：US14744093

申请日：2015-06-19

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroshi Ohno ,  Kazuhiko Yamanaka

IPC: G03B21/20 ,  G02B26/10 ,  G09G3/02 ,  H04N9/31 ,  F21V9/16 ,  F21V13/14 ,  G02B27/48

CPC classification number: G03B21/204 ,  F21V13/14 ,  G02B26/10 ,  G02B26/101 ,  G02B27/48 ,  G09G3/02 ,  H04N9/3129 ,  H04N9/3138

Abstract: An image display device which reduces speckles in an image display device using a laser source includes: a laser source which emits excitation light; a collecting lens which collects the excitation light; a deflecting element which scans the excitation light collected by the collecting lens; and a light conversion panel which converts a wavelength of the excitation light scanned by the deflecting element and emits fluorescence, wherein the light conversion panel includes a plurality of phosphor layers which are planarly disposed, absorb the excitation light, and emit the fluorescence.

Abstract translation: 使用激光源减少图像显示装置中的斑点的图像显示装置包括：发射激发光的激光源; 收集激发光的收集透镜; 偏转元件，其对由收集透镜收集的激发光进行扫描; 以及光转换面板，其转换由偏转元件扫描的激发光的波长并发射荧光，其中，所述光转换面板包括平面布置的多个荧光体层，吸收激发光并发射荧光。

公开(公告)号：US11757260B1

公开(公告)日：2023-09-12

申请号：US17950645

申请日：2022-09-22

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Hiroshi Ohno

IPC: H01S5/00 ,  H01S5/40 ,  H01S5/14 ,  H01S5/32 ,  H01S5/323

CPC classification number: H01S5/4087 ,  H01S5/143 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4062 ,  H01S5/14 ,  H01S5/3202 ,  H01S5/32341 ,  H01S5/4075

Abstract: In a WBC system of the present disclosure, an LD bar array constituted by a plurality of LD bars is configured such that a main axis direction of an off-angle of at least one LD bar is reversed with respect to a main axis direction of an off-angle of the other LD bar. By doing so, even in the LD bar in which a wavelength distribution in a wafer exists, a difference between a designed lock wavelength and a gain peak wavelength can be kept within a range where an LD oscillation due to an external resonance is possible for all emitters in the LD bar, thereby an output in the WBC system can be maximized.

公开(公告)号：US11437773B2

公开(公告)日：2022-09-06

申请号：US16889279

申请日：2020-06-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Naoya Ryoki ,  Kentaro Miyano ,  Hiroshi Ohno ,  Akihiko Ishibashi ,  Masaki Nobuoka

IPC: H01S3/109 ,  H01S3/16 ,  G02F1/355 ,  C30B29/22 ,  C30B15/28 ,  H01S3/0941 ,  C30B15/00

Abstract: A wavelength conversion device including a cavity that includes an RAMO4 crystal having a single crystal represented by a first general formula of RAMO4, a laser crystal, and a mirror, in which in the first general formula, R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn, and Cd.