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    Wavelength converter
    1.
    发明授权
    Wavelength converter 有权

    公开(公告)号：US10989985B2

    公开(公告)日：2021-04-27

    申请号：US16831532

    申请日：2020-03-26

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Kentaro Miyano ,  Naoya Ryoki ,  Akihiko Ishibashi ,  Masaki Nobuoka

    IPC: G02F1/355 ,  G02F1/35 ,  G02F1/37

    Abstract: Provided herein is a wavelength converter capable of producing shorter wavelengths by wavelength conversion than in related art. A wavelength converter of the present disclosure includes: a first layer formed of a single crystal represented by general formula RAMO4; and a second layer formed of a single crystal represented by the general formula RAMO4 and having a direction of polarization reversed 180° from a direction of polarization of the first layer, wherein, in the general formula, R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd.

    RAMO4 substrate and method of manufacture thereof, and group III nitride semiconductor
    2.
    发明授权
    RAMO4 substrate and method of manufacture thereof, and group III nitride semiconductor 有权

    公开(公告)号：US11441237B2

    公开(公告)日：2022-09-13

    申请号：US16691542

    申请日：2019-11-21

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Naoya Ryoki ,  Kentaro Miyano ,  Masaki Nobuoka ,  Akihiko Ishibashi

    IPC: H01L29/15 ,  C30B29/26 ,  H01L29/20 ,  H01L29/205 ,  C30B25/18 ,  H01L21/02 ,  C30B15/22 ,  C30B29/40

    Abstract: A RAMO4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

    RAMO4 monocrystalline substrate
    7.
    发明授权
    RAMO4 monocrystalline substrate 有权

    公开(公告)号：US10304740B2

    公开(公告)日：2019-05-28

    申请号：US15825035

    申请日：2017-11-28

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Shinsuke Komatsu ,  Yoshio Okayama ,  Masaki Nobuoka

    IPC: H01L33/00 ,  H01L21/02 ,  C30B29/22 ,  H01L21/78 ,  C30B29/40 ,  C30B25/18 ,  C01F17/00 ,  H01S5/02

    Abstract: An RAMO4 substrate that includes an RAMO4 monocrystalline substrate formed of a single crystal represented by general formula RAMO4, wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd. The RAMO4 monocrystalline substrate has a principal surface with a plurality of grooves. The principal surface has an off-angle θ with respect to a cleaving surface of the single crystal. The RAMO4 monocrystalline substrate satisfies tan θ≤Wy/Wx, where Wx is the width at the top surface of a raised portion between the grooves, and Wy is the height of the raised portion.

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