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    RAMO4 monocrystalline substrate
    1.
    发明授权
    RAMO4 monocrystalline substrate 有权

    公开(公告)号：US10304740B2

    公开(公告)日：2019-05-28

    申请号：US15825035

    申请日：2017-11-28

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Shinsuke Komatsu ,  Yoshio Okayama ,  Masaki Nobuoka

    IPC: H01L33/00 ,  H01L21/02 ,  C30B29/22 ,  H01L21/78 ,  C30B29/40 ,  C30B25/18 ,  C01F17/00 ,  H01S5/02

    Abstract: An RAMO4 substrate that includes an RAMO4 monocrystalline substrate formed of a single crystal represented by general formula RAMO4, wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd. The RAMO4 monocrystalline substrate has a principal surface with a plurality of grooves. The principal surface has an off-angle θ with respect to a cleaving surface of the single crystal. The RAMO4 monocrystalline substrate satisfies tan θ≤Wy/Wx, where Wx is the width at the top surface of a raised portion between the grooves, and Wy is the height of the raised portion.

    RAMO4 substrate
    2.
    发明授权
    RAMO4 substrate 有权

    公开(公告)号：US10246796B2

    公开(公告)日：2019-04-02

    申请号：US15429164

    申请日：2017-02-10

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Isao Tashiro ,  Hidenao Kataoka ,  Yoshio Okayama ,  Nobuyuki Yokoyama ,  Yoshifumi Takasu

    IPC: C01F17/00 ,  C30B29/22

    Abstract: A RAMO4 substrate containing an RAMO4 base material part containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from a group of elements including: Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from a group of elements including: Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from a group of elements including: Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), the RAMO4 base material part having a beveled portion at an edge portion thereof.

    Method for producing group III nitride crystal
    3.
    发明授权
    Method for producing group III nitride crystal 有权

    公开(公告)号：US10059590B2

    公开(公告)日：2018-08-28

    申请号：US14847176

    申请日：2015-09-08

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Yusuke Mori ,  Mamoru Imade ,  Tomio Yamashita ,  Ryo Kuwabara ,  Yoshio Okayama

    IPC: C01B21/06

    CPC classification number: C01B21/0632

    Abstract: A method and apparatus for producing a Group III nitride in which the thermal decomposition of the nitrogen element-containing gas is suppressed to enhance the productivity. The method for producing a Group III nitride crystal, comprising: reacting an oxide or a metal of a Group III element under a heated atmosphere to form a compound gas of the Group III element; mixing a nitrogen element-containing gas at a temperature that is lower than that of the compound gas, with the compound gas; and reacting the nitrogen element-containing gas with the compound gas to form a Group III nitride crystal.

    Light emitting device, manufacturing method therefor, and waveguide structure
    4.
    发明授权
    Light emitting device, manufacturing method therefor, and waveguide structure 有权

    公开(公告)号：US12282199B2

    公开(公告)日：2025-04-22

    申请号：US17807889

    申请日：2022-06-21

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Takehiro Asahi ,  Naoya Ryoki ,  Yukio Nishikawa ,  Yoshio Okayama

    IPC: F21V8/00 ,  G02B6/32 ,  G02B6/42 ,  G02F1/377

    Abstract: A light emitting device includes a light source and a waveguide structure. The light source emits light having a directionality. The waveguide structure includes an optical waveguide and an exterior part. The optical waveguide has an incident end surface and an emission end surface, converts a wavelength of the light incident from the incident end surface, and emits the light from the emission end surface. The exterior part is optically transparent and covers the optical waveguide such that the incident end surface and the emission end surface are exposed from the exterior part. The optical waveguide is elongated in a length direction. The length direction of the optical waveguide is inclined at a predetermined angle with respect to an optical axis of the light in a predetermined plane including the length direction of the optical waveguide and the optical axis of the light. The predetermined angle is set to allow the light to propagate in the optical waveguide with total internal reflection at a boundary surface between the optical waveguide and the exterior part.

    Method of manufacture of group III nitride semiconductor
    6.
    发明授权
    Method of manufacture of group III nitride semiconductor 有权

    公开(公告)号：US11056389B2

    公开(公告)日：2021-07-06

    申请号：US16831321

    申请日：2020-03-26

    Applicant: Panasonic Intellectual Property Management Co., Ltd.

    Inventor： Ayako Iwasawa ,  Yoshio Okayama ,  Takatoshi Okamoto

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/02

    Abstract: A method for manufacturing a group III nitride semiconductor without causing adverse effects on device characteristics includes: preparing a group III nitride substrate having a first group III nitride layer and a second group III nitride layer laminated in this order from a back-surface side to a front-surface side, the first group III nitride layer being a layer having a transmittance of 60% or more for a predetermined wavelength of 400 nm to 700 nm, the second group III nitride layer being a layer provided on the first group III nitride layer and containing impurity oxygen in a concentration of 1×1020 cm−3 or more and having a transmittance of 0.1% or less for the predetermined wavelength; forming a device structure on the front-surface side of the group III nitride substrate; and forming an internal altered layer in the first group III nitride layer by multiphoton absorption using a laser beam applied from the first group III nitride layer side on the back-surface side of the group III nitride substrate with a focal point set in front of the second group III nitride layer, and dividing the group III nitride substrate at the internal altered layer serving as a boundary.

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