公开(公告)号：US10350725B2

公开(公告)日：2019-07-16

申请号：US15424529

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshifumi Takasu ,  Yoshio Okayama ,  Akihiko Ishibashi ,  Isao Tashiro ,  Akio Ueta ,  Masaki Nobuoka ,  Naoya Ryoki

IPC: C30B33/00 ,  C30B29/26 ,  C30B29/22 ,  H01L33/00 ,  C01F17/00 ,  B28D5/00 ,  B24B7/22 ,  B24B37/04

Abstract: A RAMO4 substrate is formed from single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected form a group consisting of Hg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on at least one surface of the RAMO4 substrate. The epitaxially-grown surface includes a plurality of cleavage surfaces which are regularly distributed, and are separated from each other.

公开(公告)号：US09899564B2

公开(公告)日：2018-02-20

申请号：US15431721

申请日：2017-02-13

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Akihiko Ishibashi ,  Akio Ueta

IPC: H01L21/02 ,  H01L29/20 ,  H01L33/00 ,  H01L31/18

CPC classification number: H01L33/007 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L31/1852

Abstract: A Group III nitride semiconductor containing: a RAMO4 substrate containing a single crystal represented by the general formula RAMO4 (wherein R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or a plurality of trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd), and a Group III nitride crystal disposed above the RAMO4 substrate, having therebetween a dissimilar film that contains a material different from the RAMO4 substrate, and has plural openings.

公开(公告)号：US11370076B2

公开(公告)日：2022-06-28

申请号：US15424244

申请日：2017-02-03

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshifumi Takasu ,  Yoshio Okayama ,  Akihiko Ishibashi ,  Isao Tashiro ,  Akio Ueta ,  Masaki Nobuoka ,  Naoya Ryoki

IPC: C30B29/22 ,  B24B7/22 ,  C30B33/00

Abstract: A RAMO4 substrate includes a single crystal represented by a formula of RAMO4 (in the formula, R indicates one or a plurality of trivalent elements selected from a group consisting of Sc, In, Y, and a lanthanoid element, A indicates one or a plurality of trivalent elements selected from a group consisting of Fe(III), Ga, and Al, and M indicates one or a plurality of bivalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). An epitaxially-grown surface is provided on one surface of the RAMO4 substrate, a satin-finish surface is provided on another surface. The satin-finish surface has surface roughness which is larger than that of the epitaxially-grown surface.