公开(公告)号：US11643752B2

公开(公告)日：2023-05-09

申请号：US16739105

申请日：2020-01-09

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro Miyano ,  Naoya Ryoki ,  Akihiko Ishibashi ,  Masaki Nobuoka

IPC: C30B29/22 ,  C30B15/20

CPC classification number: C30B29/22 ,  C30B15/20

Abstract: A ScAlMgO4 monocrystalline substrate that is highly cleavable and that does not easily cause cracking in the GaN film id grown on the substrate and a method for manufacturing such a ScAlMgO4 monocrystalline substrate are provided. The ScAlMgO4 monocrystalline substrate has a crystal oxygen concentration of 57 atom % or less as measured by inductively coupled plasma atomic emission spectroscopy analysis.

公开(公告)号：US10989985B2

公开(公告)日：2021-04-27

申请号：US16831532

申请日：2020-03-26

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Kentaro Miyano ,  Naoya Ryoki ,  Akihiko Ishibashi ,  Masaki Nobuoka

IPC: G02F1/355 ,  G02F1/35 ,  G02F1/37

Abstract: Provided herein is a wavelength converter capable of producing shorter wavelengths by wavelength conversion than in related art. A wavelength converter of the present disclosure includes: a first layer formed of a single crystal represented by general formula RAMO4; and a second layer formed of a single crystal represented by the general formula RAMO4 and having a direction of polarization reversed 180° from a direction of polarization of the first layer, wherein, in the general formula, R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and a lanthanoid element, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd.

公开(公告)号：US11441237B2

公开(公告)日：2022-09-13

申请号：US16691542

申请日：2019-11-21

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Naoya Ryoki ,  Kentaro Miyano ,  Masaki Nobuoka ,  Akihiko Ishibashi

IPC: H01L29/15 ,  C30B29/26 ,  H01L29/20 ,  H01L29/205 ,  C30B25/18 ,  H01L21/02 ,  C30B15/22 ,  C30B29/40

Abstract: A RAMO4 substrate that does not easily crack during or after the formation of group III nitride crystal includes a single crystal represented by general formula RAMO4 (wherein R represents one or more trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or more trivalent elements selected from the group consisting of Fe(III), Ga, and Al, and M represents one or more divalent elements selected from the group consisting of Mg, Mn, Fe(II), Co, Cu, Zn, and Cd). The RAMO4 substrate has a crystal plane with a curvature radius r of 52 m or more, and a square value of correlation coefficient ρ of 0.81 or more. The curvature radius r is calculated as an absolute value from X-ray peak position ωi and measurement position Xi after the measurements of X-ray peak positions ωi at a plurality of positions Xi lying on a straight line passing through the center of the RAMO4 substrate. The correlation coefficient ρ is a measure of correlation between ω and measurement position Xi.

公开(公告)号：US11437773B2

公开(公告)日：2022-09-06

申请号：US16889279

申请日：2020-06-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Naoya Ryoki ,  Kentaro Miyano ,  Hiroshi Ohno ,  Akihiko Ishibashi ,  Masaki Nobuoka

IPC: H01S3/109 ,  H01S3/16 ,  G02F1/355 ,  C30B29/22 ,  C30B15/28 ,  H01S3/0941 ,  C30B15/00

Abstract: A wavelength conversion device including a cavity that includes an RAMO4 crystal having a single crystal represented by a first general formula of RAMO4, a laser crystal, and a mirror, in which in the first general formula, R represents one or a plurality of trivalent elements selected from the group consisting of Sc, In, Y, and lanthanoid elements, A represents one or a plurality of trivalent elements selected from the group consisting of Fe (III), Ga, and Al, and M represents one or a plurality of divalent elements selected from the group consisting of Mg, Mn, Fe (II), Co, Cu, Zn, and Cd.