公开(公告)号：US20240429049A1

公开(公告)日：2024-12-26

申请号：US18754435

申请日：2024-06-26

Applicant: Alliance for Sustainable Energy, LLC ,  Colorado School of Mines

Inventor： Aaron Joseph PTAK ,  Anna Katherine BRAUN ,  Corinne Evelyn PACKARD

IPC: H01L21/02 ,  C30B25/02

Abstract: The present disclosure relates to a method for smoothing a surface, where the method includes a first depositing onto a first surface of a first layer, resulting in the forming of a second layer on the first surface, where the first depositing is performed using hydride vapor phase epitaxy (HVPE). The first surface is characterized by a first surface feature height and the second layer has a second surface that is characterized by a second surface feature height that is less than the first surface feature height.

公开(公告)号：US20240379353A1

公开(公告)日：2024-11-14

申请号：US18659368

申请日：2024-05-09

Applicant: ASM IP Holding B.V.

Inventor： Wonjong Kim ,  Rami Khazaka

IPC: H01L21/02 ,  C30B25/02

Abstract: A method for epitaxially forming an epitaxial stack on a substrate is disclosed. Embodiments of the presently described method comprise performing a plurality of deposition cycles to form the epitaxial stack, whereby each of the deposition cycles comprises deposition pulses to form the individual epitaxial layers of the epitaxial stack.

公开(公告)号：US12104279B2

公开(公告)日：2024-10-01

申请号：US17649983

申请日：2022-02-04

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa Horikiri

IPC: C30B29/40 ,  C01B21/06 ,  G01N21/95 ,  H01L21/02 ,  C30B25/02 ,  G01N21/84

CPC classification number: C30B29/406 ,  C01B21/0632 ,  G01N21/95 ,  H01L21/02389 ,  C01P2002/82 ,  C01P2006/40 ,  C30B25/02 ,  G01N2021/8477

Abstract: There is provided a nitride crystal substrate constituted by group-III nitride crystal, containing n-type impurities, with an absorption coefficient α being approximately expressed by equation (1) by a least squares method in a wavelength range of at least 1 μm or more and 3.3 μm or less.








α
=


N
e

⁢
K
⁢

λ
a

⁢


(



where

1.5
×

10

-
19



≤
K
≤

6.
×

10

-
19




,

a
=
3


)



,




(
1
)









here, a wavelength is λ (μm), an absorption coefficient of the nitride crystal substrate at 27° C. is α (cm−1), a carrier concentration in the nitride crystal substrate is Ne (cm−3), and K and a are constants, wherein an error of an actually measured absorption coefficient with respect to the absorption coefficient α obtained from equation (1) at a wavelength of 2 μm is within +0.1α, and in a reflection spectrum measured by irradiating the nitride crystal substrate with infrared light, there is no peak with a peak top within a wavenumber range of 1,200 cm−1 or more and 1,500 cm−1 or less.

公开(公告)号：US12071709B2

公开(公告)日：2024-08-27

申请号：US18362117

申请日：2023-07-31

Applicant: DENSO CORPORATION

Inventor： Isaho Kamata ,  Hidekazu Tsuchida ,  Norihiro Hoshino ,  Yuichiro Tokuda ,  Takeshi Okamoto

IPC: C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/36 ,  C30B33/00

CPC classification number: C30B29/36 ,  C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B33/00

Abstract: A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.

公开(公告)号：US20240283220A1

公开(公告)日：2024-08-22

申请号：US18444796

申请日：2024-02-19

Applicant: SEIKO EPSON CORPORATION

Inventor： Yoshitomo KUMAI ,  Toru NIMURA

IPC: H01S5/18 ,  C30B25/02 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01S5/343

CPC classification number: H01S5/18 ,  C30B25/02 ,  C30B29/40 ,  C30B29/42 ,  C30B29/68 ,  H01S5/34313

Abstract: A method for manufacturing a photonic crystal including forming a first layer, forming a first hole and a second hole, crystal-growing a second layer, to form, at the first hole, a first low refractive index portion, and form, at the second hole, a second low refractive index portion, wherein during formation of the first hole and the second hole, the first hole and the second hole are formed such that a diameter of the first hole is greater than a diameter of the second hole, and during formation of the first low refractive index portion and the second low refractive index portion, the second layer is crystal-grown such that a difference between the diameter of the first hole and a diameter of the first low refractive index portion is greater than a difference between the diameter of the second hole and a diameter of the second low refractive index portion.

公开(公告)号：US11990335B2

公开(公告)日：2024-05-21

申请号：US17415921

申请日：2019-12-18

Applicant: IVWORKS CO., LTD.

Inventor： Bernard Beaumont ,  Jean-Pierre Faurie ,  Vincent Gelly ,  Nabil Nahas ,  Florian Tendille

IPC: H01L29/15 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  H01L31/0256

CPC classification number: H01L21/02389 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0254 ,  H01L29/2003

Abstract: A process for fabricating a single-crystal semiconductor material of group 13 nitride, in particular GaN, including the steps of:



deposition of at least one single-crystal layer by three-dimensional epitaxial growth on a starting substrate, the layer including areas resulting from the growth of basal facets, and areas resulting from the growth of facets of different orientations, called non-basal facets;
supply of an n-dopant gas including a first chemical element selected from the chemical elements of group 16 of the periodic table, and at least one second chemical element selected from the chemical elements of group 14 of the periodic table, such that the concentration of the second element in the areas resulting from the growth of the basal facets is higher than 1.0×1017/cm3, and the concentration of the first element in the areas resulting from the growth of the non-basal facets is lower than 2.0×1018/cm3.

公开(公告)号：US11982016B2

公开(公告)日：2024-05-14

申请号：US17471395

申请日：2021-09-10

Applicant: TAMURA CORPORATION ,  NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY

Inventor： Ken Goto ,  Kohei Sasaki ,  Akinori Koukitu ,  Yoshinao Kumagai ,  Hisashi Murakami

IPC: C30B25/16 ,  C23C16/40 ,  C23C16/448 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24

CPC classification number: C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

Abstract: As one embodiment, the present invention provides a method for growing a β-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.

公开(公告)号：US11952676B2

公开(公告)日：2024-04-09

申请号：US17072973

申请日：2020-10-16

Applicant: GlobalWafers Co., Ltd.

Inventor： Ching-Shan Lin ,  Jian-Hsin Lu ,  Chien-Cheng Liou ,  Man-Hsuan Lin

IPC: H01L29/16 ,  C30B23/00 ,  C30B23/02 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02 ,  H01L29/32 ,  H01L29/36

CPC classification number: C30B23/025 ,  C30B23/005 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/1608 ,  H01L29/32 ,  H01L29/36

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

公开(公告)号：US11948858B2

公开(公告)日：2024-04-02

申请号：US16967362

申请日：2019-02-01

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Yongjie Hu ,  Joon Sang Kang

IPC: H01L23/373 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20

CPC classification number: H01L23/3738 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02392 ,  H01L21/02546 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/20

Abstract: A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.

公开(公告)号：US11948795B2

公开(公告)日：2024-04-02

申请号：US17052889

申请日：2019-12-09

Applicant: IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)

Inventor： Myung Mo Sung ,  Lynn Lee ,  Jin Won Jung ,  Jong Chan Kim

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  C30B25/02 ,  C30B29/16 ,  H01L21/30 ,  H01L29/04 ,  H01L29/20 ,  H01L29/22 ,  H01L29/786 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32

CPC classification number: H01L21/0262 ,  C23C16/407 ,  C23C16/45525 ,  C30B25/02 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02554 ,  H01L21/02609 ,  H01L21/30 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/78696 ,  H01L33/12 ,  H01L33/16 ,  H01L33/28 ,  H01L33/32

Abstract: Provided are a method for manufacturing a single-crystal semiconductor layer. The method of manufacturing the single crystalline semiconductor layer includes performing a unit cycle multiple times, wherein the unit cycle includes a metal precursor pressurized dosing operation in which a metal precursor is adsorbed on a surface of a single crystalline substrate by supplying the metal precursor onto the single crystalline substrate while an outlet of a chamber in which the single crystalline substrate is loaded is closed such that a reaction pressure in the chamber is increased; a metal precursor purge operation; a reactive gas supplying operation in which a reactive gas is supplied into the chamber to cause a reaction of the reactive gas with the metal precursor adsorbed on the single crystalline substrate after the metal precursor purge operation; and a reactive gas purge operation.