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公开(公告)号：US12071709B2
公开(公告)日：2024-08-27
申请号：US18362117
申请日：2023-07-31
Applicant: DENSO CORPORATION
Inventor： Isaho Kamata , Hidekazu Tsuchida , Norihiro Hoshino , Yuichiro Tokuda , Takeshi Okamoto
Abstract: A raw material gas is supplied to a space in which a silicon carbide seed crystal is placed. A silicon carbide single crystal is grown on the seed crystal by keeping a monosilane partial pressure at 4 kPa or more and heating the space to a temperature of 2400° C. to 2700° C. The temperature of the space and supply of the raw material gas are controlled such that a temperature gradient of a growth crystal surface of the silicon carbide single crystal in a radial direction is 0.1° C./mm or less, and a radius of curvature of the growth crystal surface is 4.5 m or more, thereby producing a silicon carbide single crystal ingot having a growth length of 3 mm or more and an internal stress of 10 MPa or less. The ingot is then cut into a silicon carbide single crystal wafer.
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公开(公告)号：US10181517B2
公开(公告)日：2019-01-15
申请号：US15748274
申请日：2016-08-25
Applicant: DENSO CORPORATION
Inventor： Takeshi Okamoto , Hiroyuki Kondo , Takashi Kanemura , Shinichiro Miyahara , Yasuhiro Ebihara , Shoichi Onda , Hidekazu Tsuchida , Isaho Kamata , Ryohei Tanuma
IPC: C23C16/32 , C30B29/36 , H01L29/04 , H01L29/16 , H01L21/02 , H01L29/32 , H01L29/66 , H01L29/94 , C30B25/18
Abstract: A silicon carbide single crystal includes: threading dislocations each of which having a dislocation line extending through a C-plane, and a Burgers vector including at least a component in a C-axis direction. In addition, a density of the threading dislocations having angles, each of which is formed by an orientation of the Burgers vector and an orientation of the dislocation line, larger than 0° and within 40° is set to 300 dislocations/cm2 or less. Furthermore, a density of the threading dislocations having the angles larger than 40° is set to 30 dislocations/cm2 or less.
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