Invention Grant
- Patent Title: Method for growing beta-Ga
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Application No.: US17471395Application Date: 2021-09-10
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Publication No.: US11982016B2Publication Date: 2024-05-14
- Inventor: Ken Goto , Kohei Sasaki , Akinori Koukitu , Yoshinao Kumagai , Hisashi Murakami
- Applicant: TAMURA CORPORATION , NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY
- Applicant Address: JP Tokyo
- Assignee: Tamura Corporation,National University Corporation Tokyo University of Agriculture and Technology
- Current Assignee: Tamura Corporation,National University Corporation Tokyo University of Agriculture and Technology
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Scully, Scott, Murphy & Presser, PC
- Priority: JP 13203198 2013.09.30 JP 14088589 2014.04.22
- Main IPC: C30B25/16
- IPC: C30B25/16 ; C23C16/40 ; C23C16/448 ; C30B25/02 ; C30B29/16 ; H01L21/02 ; H01L29/04 ; H01L29/24
Abstract:
As one embodiment, the present invention provides a method for growing a β-Ga2O3-based single crystal film by using HYPE method. The method includes a step of exposing a Ga2O3-based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga2O3-based single crystal film on a principal surface of the Ga2O3-based substrate at a growth temperature of not lower than 900° C.
Public/Granted literature
- US20210404086A1 METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE Public/Granted day:2021-12-30
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