公开(公告)号：US12131909B2

公开(公告)日：2024-10-29

申请号：US18485749

申请日：2023-10-12

申请人： Lam Research Corporation

发明人： Kashish Sharma ,  Taeseung Kim ,  Samantha S. H. Tan ,  Dennis M. Hausmann

IPC分类号： H01L21/285 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/06 ,  C23C16/45534 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/52 ,  H01L21/0212 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/0228

摘要： Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.

公开(公告)号：US12125698B2

公开(公告)日：2024-10-22

申请号：US17516326

申请日：2021-11-01

申请人： Applied Materials, Inc.

发明人： Lara Hawrylchak ,  Schubert S. Chu ,  Tushar Mandrekar ,  Errol C. Sanchez ,  Kin Pong Lo

IPC分类号： H01L21/02 ,  B08B7/00 ,  C23C16/02 ,  C23C16/24 ,  C23C16/30 ,  C23C16/455 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/687

CPC分类号： H01L21/02049 ,  B08B7/0035 ,  C23C16/0209 ,  C23C16/0245 ,  C23C16/24 ,  C23C16/30 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/54 ,  C30B25/02 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32513 ,  H01J37/32522 ,  H01J37/32899 ,  H01L21/02046 ,  H01L21/02315 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/32136 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67184 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/68742 ,  H01J2237/334 ,  H01J2237/335

摘要： Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

公开(公告)号：US12119223B2

公开(公告)日：2024-10-15

申请号：US17624009

申请日：2021-12-21

申请人： Applied Materials, Inc.

发明人： Bo Xie ,  Ruitong Xiong ,  Sure K. Ngo ,  Kang Sub Yim ,  Yijun Liu ,  Li-Qun Xia

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

CPC分类号： H01L21/02348 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02274

摘要： Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.

公开(公告)号：US12106958B2

公开(公告)日：2024-10-01

申请号：US18342296

申请日：2023-06-27

申请人： Applied Materials, Inc.

发明人： Anup Kumar Singh ,  Rick Kustra ,  Vinayak Vishwanath Hassan ,  Bhaskar Kumar ,  Krishna Nittala ,  Pramit Manna ,  Kaushik Alayavalli ,  Ganesh Balasubramanian

IPC分类号： H01L21/02 ,  B08B7/00 ,  C23C16/26 ,  C23C16/44 ,  C23C16/505 ,  H01J37/32 ,  H01L21/033

CPC分类号： H01L21/02274 ,  B08B7/0035 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/02115 ,  H01L21/0332

摘要： Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

公开(公告)号：US12087562B2

公开(公告)日：2024-09-10

申请号：US17586002

申请日：2022-01-27

申请人： Tokyo Electron Limited

发明人： Kazushi Hikawa ,  Katsuhito Hirose

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/505 ,  H05H1/46

CPC分类号： H01J37/32935 ,  C23C16/45536 ,  C23C16/505 ,  H01J37/32082 ,  H05H1/4645

摘要： A substrate processing apparatus includes a radio-frequency power supply part configured to supply radio-frequency power for plasma generation to a processing container, and a monitoring part configured to detect an abnormality in the supply of the radio-frequency power to the processing container, wherein the monitoring part is configured to detect the abnormality in the supply of the radio-frequency power to the processing container based on a signal data obtained by sampling a signal propagating between the radio-frequency power supply part and the processing container at a sampling frequency higher than a frequency of the radio-frequency power.

公开(公告)号：US12074011B2

公开(公告)日：2024-08-27

申请号：US17356998

申请日：2021-06-24

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Jiye Kim ,  In Cheol Song ,  Woongpil Jeon ,  Daihong Kim ,  Jaebeom Park ,  Byungho Chun

IPC分类号： H01J37/32 ,  C23C16/505 ,  H05K9/00

CPC分类号： H01J37/32449 ,  C23C16/505 ,  H01J37/32082 ,  H05K9/0081 ,  H01J2237/3321

摘要： An apparatus for manufacturing a semiconductor device includes a chamber including a lower housing and an upper housing, heater chucks in the lower housing, shower heads on the heater chucks, the shower heads being between the lower housing and the upper housing, power supplies connected to the shower heads to provide radio-frequency powers to the shower heads, power straps in the upper housing to connect the shower heads to the power supplies, and shielding members in the upper housing, the shielding members enclosing the power straps and the shower heads, respectively, the shielding members to prevent electromagnetic interference of the radio-frequency powers between the power straps and between the shower heads.

公开(公告)号：US12054827B2

公开(公告)日：2024-08-06

申请号：US17041403

申请日：2019-04-01

申请人： Applied Materials, Inc.

发明人： Shishi Jiang ,  Pramit Manna ,  Abhijit Basu Mallick ,  Suresh Chand Seth ,  Srinivas D. Nemani

IPC分类号： C23C16/505 ,  C23C16/24 ,  C23C16/56 ,  H01J37/32 ,  H01L21/3205 ,  H01L21/321

CPC分类号： C23C16/505 ,  C23C16/24 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/32055 ,  H01L21/321 ,  H01J2237/3321

摘要： Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

公开(公告)号：US20240258584A1

公开(公告)日：2024-08-01

申请号：US18592946

申请日：2024-03-01

申请人： CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED

发明人： Ting LI ,  Haizu JIN ,  Shaojun NIU ,  Huaichao TANG ,  Longqing PENG

IPC分类号： H01M10/42 ,  C23C16/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/505 ,  C23C16/56 ,  H01M10/04

CPC分类号： H01M10/4235 ,  C23C16/0245 ,  C23C16/345 ,  C23C16/401 ,  C23C16/403 ,  C23C16/405 ,  C23C16/407 ,  C23C16/4408 ,  C23C16/505 ,  C23C16/56 ,  H01M10/0404

摘要： A protection method for a secondary battery includes evacuating the secondary battery through an injection opening of the secondary battery to within 100 kPa, introducing a first reactant into the secondary battery through the injection opening until a pressure of the secondary battery rises by more than 1 Pa and maintaining the pressure for more than 1 ms, evacuating the secondary battery through the injection opening to within 100 kPa, and introducing a second reactant into the secondary battery through the injection opening until the pressure rises by more than 1 Pa and maintaining the pressure for more than 1 ms, thereby forming a protection layer on an internal surface of the secondary battery.

公开(公告)号：US12049698B2

公开(公告)日：2024-07-30

申请号：US17737121

申请日：2022-05-05

申请人： Lam Research Corporation

发明人： Antonio Xavier ,  Steven Goza ,  Ramesh Chandrasekharan ,  Adrien Lavoie ,  Joseph Nesmith

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02

CPC分类号： C23C16/4405 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/50 ,  C23C16/505 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228

摘要： A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process.

公开(公告)号：US20240234105A9

公开(公告)日：2024-07-11

申请号：US17971205

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Zheng John YE ,  Andrew C. LAM ,  Zeqiong ZHAO ,  Jianhua ZHOU ,  Hshiang AN ,  Suhail ANWAR ,  Yoshitake NAKAJIMA ,  Fu-ting CHANG

IPC分类号： H01J37/32 ,  C23C16/458 ,  C23C16/505 ,  C23C16/52

CPC分类号： H01J37/32715 ,  C23C16/4586 ,  C23C16/505 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32183 ,  H01J2237/0262 ,  H01J2237/20235 ,  H01J2237/24564 ,  H01J2237/3321 ,  H01J2237/3323

摘要： Embodiments of the present disclosure generally relate to methods and apparatus for measuring and controlling local impedances at a substrate support in a plasma processing chamber during processing of a substrate. A substrate support includes a plurality of substrate support pins wherein the radio frequency voltage, current and phase of each of the plurality of substrate support pins are measured and impedances of the support pins are adjusted in real time. Each of the substrate support pins is coupled to an associated adjustable impedance circuit that may be remotely controlled. In one embodiment a variable capacitor is used to adjust the impedance of the impedance circuit coupled to the associated substrate support pin and may be remotely adjusted with a stepper motor. In another embodiment a microcontroller may control the impedance adjustments for all of the plurality of substrate support pins and may be used to track these impedances with each other and with a bulk impedance of the plasma processing chamber.