SUSCEPTOR
    3.
    发明公开
    SUSCEPTOR 审中-公开

    公开(公告)号:US20240347372A1

    公开(公告)日:2024-10-17

    申请号:US18632421

    申请日:2024-04-11

    摘要: Described herein are a susceptor, processing chambers having the same, and method for substrate processing using the same. In one example, a susceptor for supporting a substrate during processing is provided. The susceptor has a disk shaped body that includes a rim circumscribing an inner region. The inner region is recessed to form a recessed pocket that is configured to receive a substrate. A plurality of bumps extend radially into the inner region that are configured to contact an outer edge of the substrate when the substrate is disposed in the recessed pocket. A venting region is defined within the inner region. The venting region is defined by a plurality of vent holes formed through the body. The venting region terminates at a radius originating from a centerline of the body that is at least 4.0 millimeter less than a radius defining an inner wall of the rim.

    SEMICONDUCTOR MANUFACTURING APPARATUS
    7.
    发明公开

    公开(公告)号:US20240331982A1

    公开(公告)日:2024-10-03

    申请号:US18738213

    申请日:2024-06-10

    申请人: TOTO LTD.

    摘要: According to one embodiment, a semiconductor manufacturing apparatus member includes a base and a particle-resistant layer. The base includes a first surface, a second surface crossing the first surface, and an edge portion connecting the first surface and the second surface. The particle-resistant layer includes a polycrystalline ceramic and covering the first surface, the second surface, and the edge portion. The particle-resistant layer includes a first particle-resistant layer provided at the edge portion, and a second particle-resistant layer provided at the first surface. A particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer. A thickness of the first particle-resistant layer is thinner than a thickness of the second particle-resistant layer.

    VAPOR DEPOSITION DEVICE CAPABLE OF RECIPROCATING ROTATION AND LIFTING

    公开(公告)号:US20240327987A1

    公开(公告)日:2024-10-03

    申请号:US18699313

    申请日:2022-09-22

    IPC分类号: C23C16/458 C23C14/50

    摘要: A vapor deposition device capable of reciprocating rotation and lifting is disclosed. The vapor deposition device includes a vapor deposition cavity, a base station, a base shaft, a telescopic assembly, a passive lifting rotation member, a rotation mechanism, and a lifting mechanism. The rotation mechanism is fixedly connected with the telescopic assembly, and configured to drive the telescopic assembly to perform a reciprocating rotational motion, which in turn drives the base station, the base shaft, and the passive lifting rotation member to perform a reciprocating rotational motion in sequence. The lifting mechanism is rotatably and slidably connected with the passive lifting rotation member, and configured to drive the passive lifting rotation member to move up and down, which in turn drives the base shaft and the base station to move up and down. The telescopic assembly extends when the base station ascends and shortens when the base station descends.

    SUBSTRATE SUPPORT DEVICE
    10.
    发明公开

    公开(公告)号:US20240318314A1

    公开(公告)日:2024-09-26

    申请号:US18609067

    申请日:2024-03-19

    IPC分类号: C23C16/458 C23C16/46

    CPC分类号: C23C16/4586 C23C16/46

    摘要: A substrate support device includes a chuck plate, a shaft connected to a center lower end of the chuck plate, a heater unit provided inside the chuck plate, an electrode unit provided inside the chuck plate, and provided on the heater unit, a jumper unit provided inside the chuck plate, arranged between the electrode unit and the heater unit, and electrically connected to the electrode unit to supply power to the electrode unit, and a power control unit, wherein the electrode unit includes a center electrode and a first electrode arranged in a ring shape around the center electrode, wherein the jumper unit includes a first jumper connected to the first electrode and a center jumper connected to the center electrode, and wherein the first jumper includes a first connection jumper, and a first inclined jumper electrically connecting the first jumper.