公开(公告)号：US12129554B2

公开(公告)日：2024-10-29

申请号：US17778485

申请日：2020-11-06

申请人： Callidus Process Solutions Pty Ltd

发明人： Duncan Bews ,  Robert Smith ,  Evelyn Ng

IPC分类号： C23C28/00 ,  B32B15/04 ,  B32B15/16 ,  B32B18/00 ,  C23C4/02 ,  C23C4/10 ,  C23C4/11 ,  C23C4/134 ,  C23C4/137 ,  C23C4/18 ,  C23C16/06 ,  C23C30/00 ,  C25D3/66 ,  F01D5/28 ,  F01D25/00 ,  F16K25/00 ,  F16K47/00

CPC分类号： C23C28/322 ,  B32B15/04 ,  B32B15/043 ,  B32B15/16 ,  B32B18/00 ,  C23C4/02 ,  C23C4/10 ,  C23C4/11 ,  C23C4/134 ,  C23C4/137 ,  C23C4/18 ,  C23C16/06 ,  C23C28/32 ,  C23C28/321 ,  C23C28/3215 ,  C23C28/324 ,  C23C28/34 ,  C23C28/341 ,  C23C28/345 ,  C23C28/3455 ,  C23C28/347 ,  C23C30/00 ,  C23C30/005 ,  C25D3/66 ,  F01D5/28 ,  F01D5/282 ,  F01D5/284 ,  F01D5/288 ,  F01D25/005 ,  F16K25/005 ,  F16K47/00 ,  Y10T428/12576 ,  Y10T428/12597 ,  Y10T428/12604 ,  Y10T428/12611 ,  Y10T428/12618 ,  Y10T428/1266 ,  Y10T428/12667 ,  Y10T428/12771 ,  Y10T428/12785 ,  Y10T428/12806 ,  Y10T428/12812 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12861 ,  Y10T428/12868 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12972 ,  Y10T428/12979 ,  Y10T428/12993

摘要： A bi-layer protective coating for a metal component, the bi-layer protective coating comprising a bond coating that is metallurgically fused to a substrate of the metal component, wherein the bond coating comprises one or more rare metals and a top coating that is mechanically bonded to the bond coating, wherein the top coating comprises one or more metal oxides, or one or more metal carbides.

公开(公告)号：US12091746B2

公开(公告)日：2024-09-17

申请号：US17507034

申请日：2021-10-21

申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION ,  The Regents of the University of New Mexico

发明人： Max G. Lagally ,  Matthew McLean Dwyer ,  Francesca Cavallo ,  Daniel Warren van der Weide ,  Abhishek Bhat

IPC分类号： C23C16/06 ,  C23C16/04 ,  H01J9/14 ,  H01J23/16 ,  H01J25/44 ,  H03F3/58

CPC分类号： C23C16/06 ,  C23C16/04 ,  H01J9/14 ,  H01J23/165 ,  H01J25/44 ,  H03F3/58 ,  H01J2209/012

摘要： Traveling-wave tube amplifiers for high-frequency signals, including terahertz signals, and methods for making a slow-wave structure for the traveling-wave tube amplifiers are provided. The slow-wave structures include helical conductors that are self-assembled via the release and relaxation of strained films from a sacrificial growth substrate.

公开(公告)号：US12065731B2

公开(公告)日：2024-08-20

申请号：US17248358

申请日：2021-01-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng Hung ,  Pei-Wen Wu ,  Yu-Sheng Wang ,  Pei-Shan Chang

IPC分类号： H01L21/033 ,  C23C16/02 ,  C23C16/06 ,  H01L21/02 ,  H01L29/34 ,  H01L29/66

CPC分类号： C23C16/06 ,  C23C16/0281 ,  H01L21/02425 ,  H01L21/0332 ,  H01L29/34 ,  H01L29/66795

摘要： In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.

公开(公告)号：US20240271276A1

公开(公告)日：2024-08-15

申请号：US18403628

申请日：2024-01-03

申请人： Applied Materials, Inc.

发明人： LAKMAL KALUTARAGE ,  MADHUR SACHAN ,  MARK SALY ,  ZHENXING HAN

IPC分类号： C23C16/455 ,  C23C16/06

CPC分类号： C23C16/45525 ,  C23C16/06

摘要： Embodiments disclosed herein include a method of forming a metal-oxo photoresist. In an embodiment, the method comprises flowing a first precursor into a chamber, where the first precursor comprises a first metal. In an embodiment, the method further comprises flowing a second precursor into the chamber, where the second precursor comprises a second metal that is different than the first metal. In an embodiment, the method further comprises depositing the metal-oxo photoresist on a substrate in the chamber using a dry deposition process using the first precursor and the second precursor.

公开(公告)号：US20240240314A1

公开(公告)日：2024-07-18

申请号：US18402079

申请日：2024-01-02

申请人： Applied Materials, Inc.

发明人： Zhen Liu ,  Min-Han Lee ,  Jie Zhang ,  Yongqian Gao ,  Tsung-Han Yang ,  Rongjun Wang

IPC分类号： C23C16/455 ,  C23C16/06 ,  C23C16/56

CPC分类号： C23C16/45525 ,  C23C16/06 ,  C23C16/56

摘要： Embodiments of the disclosure relate to methods for metal gapfill of a logic device with lower resistivity. Specific embodiments provide integrated separate tungsten PVD processes with plasma-etch to solve the overhang issue caused by tungsten PVD and the high resistivity caused by nucleation.

公开(公告)号：US12037682B2

公开(公告)日：2024-07-16

申请号：US17814653

申请日：2022-07-25

申请人： Applied Materials, Inc.

发明人： Peiqi Wang ,  Cheng Cheng ,  Kai Wu ,  Insu Ha ,  Sang Jin Lee

IPC分类号： C23C16/06 ,  C23C16/04 ,  C23C16/38 ,  C23C16/455 ,  C23C16/56

CPC分类号： C23C16/38 ,  C23C16/042 ,  C23C16/45553 ,  C23C16/56

摘要： A method of forming a structure of a substrate is provided including a tungsten-containing layer including a nucleation layer and a fill layer. The method includes disposing a nucleation layer along sidewalls of the opening, wherein nucleation layer includes boron and tungsten. Disposing the fill layer over the nucleation layer within the opening, wherein a tungsten-containing layer includes a resistivity of about 16 μΩ·cm or less, wherein a tungsten-containing layer has a thickness of about 200 Å to about 600 Å, and wherein a tungsten-containing layer thickness is half a width of the tungsten-containing layer disposed within the opening between opposing sidewall portions of the opening.

公开(公告)号：US20240222128A1

公开(公告)日：2024-07-04

申请号：US18558388

申请日：2021-05-06

申请人： Applied Materials, Inc.

发明人： Mingrui ZHAO ,  Peiqi WANG ,  Kai WU ,  Harpreet SINGH ,  Michael C. KUTNEY

IPC分类号： H01L21/285 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC分类号： H01L21/28506 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/52 ,  H01L21/76879

摘要： Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process. The processing system is configured to periodically condition the first radial generator by forming a plasma of a relatively low amount of a halogen-based gas.

公开(公告)号：US20240210988A1

公开(公告)日：2024-06-27

申请号：US18129524

申请日：2023-03-31

申请人： Intel Corporation

发明人： David Pidwerbecki ,  Arvind S ,  Jeff Ku ,  Juha Tapani Paavola ,  Prakash Kurma Raju ,  Amruta Krishnakumar Ranade ,  Sudheera Sudhakar ,  Mousumi Deka ,  Snehal Chaudhari ,  Akarsha R. Kadadevaramath

IPC分类号： G06F1/16 ,  B32B5/02 ,  B32B5/26 ,  C23C14/20 ,  C23C14/35 ,  C23C16/06

CPC分类号： G06F1/1615 ,  B32B5/02 ,  B32B5/26 ,  C23C14/205 ,  C23C14/35 ,  C23C16/06 ,  B32B2255/02 ,  B32B2255/205 ,  B32B2255/28 ,  B32B2260/023 ,  B32B2260/046 ,  B32B2457/00

摘要： Systems, apparatus, articles of manufacture, and methods are disclosed related to composite materials for electronic device chassis. An example electronic device includes a chassis including a layer of a magnesium alloy or a layer of polyether ether ketone and carbon fiber reinforced plastic and an anodized aluminum coating.

公开(公告)号：US12002597B2

公开(公告)日：2024-06-04

申请号：US17444220

申请日：2021-08-02

申请人： Quantinuum LLC

发明人： Mark Kokish ,  Nathaniel Burdick

IPC分类号： G21G4/04 ,  B82Y10/00 ,  G21K1/00 ,  H05H3/02 ,  C23C16/06 ,  C23C16/455

CPC分类号： G21G4/04 ,  B82Y10/00 ,  G21K1/00 ,  H05H3/02 ,  C23C16/06 ,  C23C16/45544

摘要： Methods and dispensers for dispensing atomic objects are provided. An example method for dispensing atomic objects includes sealing a reaction component at least partially coated with a composition comprising the atomic objects inside an oven; and, with the oven disposed within a pressure-controlled chamber, heating the composition to an atomizing reaction temperature to cause an atomizing chemical reaction to occur. The reaction component comprises a material that is a participant in the reaction. A result of the reaction is elemental atomic objects deposited on a depositing surface within the oven. The atomizing reaction temperature is greater than a dispensing threshold temperature. The method further comprises allowing the oven to cool below the dispensing threshold temperature; and heating the oven to a dispensing temperature to cause the elemental atomic objects to be dispensed from the oven through a dispensing aperture. The dispensing temperature does not exceed the dispensing threshold temperature.

公开(公告)号：US20240167148A1

公开(公告)日：2024-05-23

申请号：US17989767

申请日：2022-11-18

申请人： Applied Materials, Inc.

发明人： Tsung-Han Yang ,  Shiyu Yue ,  Rongjun Wang

IPC分类号： C23C16/02 ,  B08B7/00 ,  C23C16/06

CPC分类号： C23C16/0227 ,  B08B7/0035 ,  C23C16/06

摘要： Embodiments of the disclosure are directed to methods of removing metal oxide from a substrate surface by exposing the substrate surface to an un-biased cleaning plasma comprising a mixture of hydrogen (H2) and oxygen (O2). In some embodiments, the substrate surface has at least one feature thereon, the at least one feature defining a trench having a top surface, a bottom surface, and two opposed sidewalls. The un-biased cleaning plasma comprises in a range of from 1% to 20% oxygen (O2) on a molecular basis and greater than or equal to 80% hydrogen (H2). The un-biased cleaning plasma removes substantially all of the metal oxide—such as molybdenum oxide (MoOx), ruthenium oxide (RuOx), or tungsten oxide (WOx)—from the substrate surface, and the top surface, the bottom surface, and the two opposed sidewalls of the trench without damaging the dielectric and/or critical dimension (CD)/profile of the structure.