公开(公告)号：US12065731B2

公开(公告)日：2024-08-20

申请号：US17248358

申请日：2021-01-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chi-Cheng Hung ,  Pei-Wen Wu ,  Yu-Sheng Wang ,  Pei-Shan Chang

IPC分类号： H01L21/033 ,  C23C16/02 ,  C23C16/06 ,  H01L21/02 ,  H01L29/34 ,  H01L29/66

CPC分类号： C23C16/06 ,  C23C16/0281 ,  H01L21/02425 ,  H01L21/0332 ,  H01L29/34 ,  H01L29/66795

摘要： In some implementations, one or more semiconductor processing tools may deposit cobalt material within a cavity of the semiconductor device. The one or more semiconductor processing tools may polish an upper surface of the cobalt material. The one or more semiconductor processing tools may perform a hydrogen soak on the semiconductor device. The one or more semiconductor processing tools may deposit tungsten material onto the upper surface of the cobalt material.

公开(公告)号：US09899258B1

公开(公告)日：2018-02-20

申请号：US15282440

申请日：2016-09-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Pei-Wen Wu ,  Sung-Li Wang ,  Min-Hsiu Hung ,  Yida Li ,  Chih-Wei Chang ,  Huang-Yi Huang ,  Cheng-Tung Lin ,  Jyh-Cherng Sheu ,  Yee-Chia Yeo ,  Chi On Chui

IPC分类号： H01L21/768 ,  H01L21/3213

CPC分类号： H01L21/76879 ,  H01L21/32131 ,  H01L21/76847 ,  H01L21/76861 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76883 ,  H01L23/481

摘要： Overhang reduction methods are disclosed. In some embodiments, a method includes forming a recess in a dielectric layer, the recess defining first sidewalls of the dielectric layer. The method also includes depositing a first conductive layer over an upper surface of the dielectric layer and the sidewalls of the dielectric layer, the first conductive layer having a first overhang, removing the first overhang of the first conductive layer using an etchant selected from the group consisting of a halide of the first conductive layer, Cl2, BCl3, SPM, SC1, SC2, and combinations thereof, and filling the recess with a second conductive layer.