公开(公告)号：US20240271276A1

公开(公告)日：2024-08-15

申请号：US18403628

申请日：2024-01-03

申请人： Applied Materials, Inc.

发明人： LAKMAL KALUTARAGE ,  MADHUR SACHAN ,  MARK SALY ,  ZHENXING HAN

IPC分类号： C23C16/455 ,  C23C16/06

CPC分类号： C23C16/45525 ,  C23C16/06

摘要： Embodiments disclosed herein include a method of forming a metal-oxo photoresist. In an embodiment, the method comprises flowing a first precursor into a chamber, where the first precursor comprises a first metal. In an embodiment, the method further comprises flowing a second precursor into the chamber, where the second precursor comprises a second metal that is different than the first metal. In an embodiment, the method further comprises depositing the metal-oxo photoresist on a substrate in the chamber using a dry deposition process using the first precursor and the second precursor.

公开(公告)号：US20240319603A1

公开(公告)日：2024-09-26

申请号：US18581290

申请日：2024-02-19

申请人： Applied Materials, Inc.

发明人： ZHENXING HAN ,  MADHUR SACHAN ,  RUIYING HAO ,  NANCY FUNG ,  LIKUN WANG ,  GABRIELA ALVA

IPC分类号： G03F7/16 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/162 ,  G03F7/0043 ,  G03F7/2002

摘要： Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises depositing a metal-oxo layer over a substrate, and applying a chemically amplified resist (CAR) over the metal-oxo layer. In an embodiment, the method further comprises exposing the CAR, and developing the CAR to form a pattern in the CAR. In an embodiment, the method further comprises transferring the pattern into the metal-oxo layer, and transferring the pattern into the substrate.

公开(公告)号：US20240272552A1

公开(公告)日：2024-08-15

申请号：US18407776

申请日：2024-01-09

申请人： Applied Materials, Inc.

发明人： GABRIELA ALVA ,  ZHENXING HAN ,  MADHUR SACHAN ,  CHI-I LANG ,  LIN ZHOU ,  LEQUN LIU ,  NASRIN KAZEM

IPC分类号： G03F7/039 ,  G03F7/00 ,  G03F7/11 ,  G03F7/20

CPC分类号： G03F7/0392 ,  G03F7/11 ,  G03F7/2026 ,  G03F7/70033

摘要： Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises, disposing a photoresist layer over a substrate, and exposing the photoresist layer to form an exposed region and an unexposed region in the photoresist layer. In an embodiment, the method further comprises treating either the exposed region or the unexposed region with a sequential infiltration synthesis (SIS) process to form a treated region, and developing the photoresist layer to remove portions of the photoresist layer other than the treated region.