SEMICONDUCTOR STRUCTURE
    1.
    发明公开

    公开(公告)号:US20240274652A1

    公开(公告)日:2024-08-15

    申请号:US18183165

    申请日:2023-03-14

    IPC分类号: H01L23/522 H01G4/018

    摘要: A semiconductor structure including the following components is provided. A first capacitor structure includes first, second, and third electrode layers and first and second dielectric layers. The second electrode layer is disposed on the first electrode layer. The top-view pattern of the second electrode layer partially overlaps the top-view pattern of the first electrode layer to have a first overlapping region. The third electrode layer is disposed on the second electrode layer. The top-view pattern of the third electrode layer partially overlaps the top-view pattern of the second electrode layer to have a second overlapping region. The first overlapping region and the second overlapping region have the same top-view area. The first dielectric layer is disposed between the first electrode layer and the second electrode layer. The second dielectric layer is disposed between the second electrode layer and the third electrode layer.

    Capacitor having an auxiliary electrode

    公开(公告)号:US10424440B2

    公开(公告)日:2019-09-24

    申请号:US15676050

    申请日:2017-08-14

    摘要: A capacitor that includes a lower common electrode having a first region and a second region, a first upper electrode opposing the first region, a first dielectric layer between the first region and the first upper electrode, a second upper electrode located in a layer in which the first upper electrode is located and opposing the second region, a second dielectric layer between the second region and the second upper electrode, a first connection electrode electrically connected to the first upper electrode, a second connection electrode located in a layer in which the first connection electrode is located and electrically connected to the second upper electrode, and auxiliary electrodes located in a layer different from a layer in which the lower common electrode is located and that connect the first region and the second region of the lower common electrode.