公开(公告)号：US20230010901A1

公开(公告)日：2023-01-12

申请号：US17372397

申请日：2021-07-09

Applicant: Micron Technology, Inc.

Inventor： Yosuke Adachi ,  Hiroshi Amaike ,  Keisuke Otsuka ,  Shogo Omiya ,  Tomohiro Iwaki ,  Emi Seko

IPC: H01L27/108

Abstract: Disclosed herein is an apparatus that includes a plurality of cell capacitors arranged in a memory cell array region of a semiconductor substrate, each of the plurality of cell capacitors having a first electrode, a second electrode and an insulating film therebetween to electrically disconnect the first and second electrodes, a first conductive member including the plurality of cell capacitors therein, the first conductive member being electrically connected in common to the first electrodes of the plurality of cell capacitors, and a second conductive member formed on an upper surface of the first conductive member, a material of the second conductive member being different from that of the first conductive member. A side surface of the first conductive member is free from the second conductive member.

公开(公告)号：US20190221366A1

公开(公告)日：2019-07-18

申请号：US16368601

申请日：2019-03-28

Applicant: Micron Technology, Inc.

Inventor： Kuo-Chen Wang ,  Hiroshi Amaike ,  Kota Hattori

IPC: H01G4/005 ,  H01G4/018

CPC classification number: H01G4/005 ,  H01G4/012 ,  H01G4/018 ,  H01G4/33 ,  H01G4/40 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/87 ,  H01L28/91

Abstract: Some embodiments include a capacitor. The capacitor has a first electrode with a lower pillar portion, and with an upper container portion over the lower pillar portion. The lower pillar portion has an outer surface. The upper container portion has an inner surface and an outer surface. Dielectric material lines the inner and outer surfaces of the upper container portion, and lines the outer surface of the lower pillar portion. A second electrode extends along the inner and outer surfaces of the upper container portion, and along the outer surface of the lower pillar portion. The second electrode is spaced from the first electrode by the dielectric material. Some embodiments include assemblies (e.g., memory arrays) which have capacitors. Some embodiments include methods of forming capacitors.

公开(公告)号：US20190148066A1

公开(公告)日：2019-05-16

申请号：US15814882

申请日：2017-11-16

Applicant: Micron Technology,Inc.

Inventor： Kuo-Chen Wang ,  Hiroshi Amaike ,  Kota Hattori

IPC: H01G4/005 ,  H01G4/018

Abstract: Some embodiments include a capacitor. The capacitor has a first electrode with a lower pillar portion, and with an upper container portion over the lower pillar portion. The lower pillar portion has an outer surface. The upper container portion has an inner surface and an outer surface. Dielectric material lines the inner and outer surfaces of the upper container portion, and lines the outer surface of the lower pillar portion. A second electrode extends along the inner and outer surfaces of the upper container portion, and along the outer surface of the lower pillar portion. The second electrode is spaced from the first electrode by the dielectric material. Some embodiments include assemblies (e.g., memory arrays) which have capacitors. Some embodiments include methods of forming capacitors.

公开(公告)号：US10290422B1

公开(公告)日：2019-05-14

申请号：US15814882

申请日：2017-11-16

Applicant: Micron Technology, Inc.

Inventor： Kuo-Chen Wang ,  Hiroshi Amaike ,  Kota Hattori

IPC: H01G4/005 ,  H01G4/018 ,  H01G4/40

Abstract: Some embodiments include a capacitor. The capacitor has a first electrode with a lower pillar portion, and with an upper container portion over the lower pillar portion. The lower pillar portion has an outer surface. The upper container portion has an inner surface and an outer surface. Dielectric material lines the inner and outer surfaces of the upper container portion, and lines the outer surface of the lower pillar portion. A second electrode extends along the inner and outer surfaces of the upper container portion, and along the outer surface of the lower pillar portion. The second electrode is spaced from the first electrode by the dielectric material. Some embodiments include assemblies (e.g., memory arrays) which have capacitors. Some embodiments include methods of forming capacitors.

公开(公告)号：US10566136B2

公开(公告)日：2020-02-18

申请号：US16368601

申请日：2019-03-28

Applicant: Micron Technology, Inc.

Inventor： Kuo-Chen Wang ,  Hiroshi Amaike ,  Kota Hattori

IPC: H01G4/40 ,  H01G4/005 ,  H01G4/018

Abstract: Some embodiments include a capacitor. The capacitor has a first electrode with a lower pillar portion, and with an upper container portion over the lower pillar portion. The lower pillar portion has an outer surface. The upper container portion has an inner surface and an outer surface. Dielectric material lines the inner and outer surfaces of the upper container portion, and lines the outer surface of the lower pillar portion. A second electrode extends along the inner and outer surfaces of the upper container portion, and along the outer surface of the lower pillar portion. The second electrode is spaced from the first electrode by the dielectric material. Some embodiments include assemblies (e.g., memory arrays) which have capacitors. Some embodiments include methods of forming capacitors.