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公开(公告)号:US20180083579A1
公开(公告)日:2018-03-22
申请号:US15272103
申请日:2016-09-21
发明人: Hossein Noori , Chih-Chieh Cheng
CPC分类号: H03F1/3205 , H03F1/56 , H03F3/195 , H03F3/72 , H03F2200/18 , H03F2200/21 , H03F2200/211 , H03F2200/213 , H03F2200/222 , H03F2200/225 , H03F2200/24 , H03F2200/243 , H03F2200/249 , H03F2200/27 , H03F2200/294 , H03F2200/297 , H03F2200/301 , H03F2200/306 , H03F2200/312 , H03F2200/387 , H03F2200/391 , H03F2200/399 , H03F2200/417 , H03F2200/451 , H03F2200/48 , H03F2200/489 , H03F2200/492 , H03F2200/495 , H03F2200/546 , H03F2200/72 , H03F2200/75 , H03G1/0029 , H03G1/0088 , H03G1/0094 , H03G3/001 , H03G3/008 , H03G3/10 , H03G2201/106 , H03G2201/307 , H03G2201/504
摘要: A receiver front end capable of receiving and processing intraband non-contiguous carrier aggregate (CA) signals using multiple low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” input stage and a “common gate” output stage can be turned on or off using the gate of the output stage. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input stage of each cascode. Further switches used for switching degeneration inductors, gate/sources caps and gate to ground caps for each legs can be used to further improve the matching performance of the invention.
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公开(公告)号:US09729114B2
公开(公告)日:2017-08-08
申请号:US14700666
申请日:2015-04-30
发明人: Santosh Astgimath
IPC分类号: H03F99/00 , H04R3/00 , H03F3/50 , H03F1/26 , H03F3/183 , H03F3/187 , H03F1/02 , H03G1/00 , H03G3/00
CPC分类号: H03F3/505 , H03F1/0205 , H03F1/26 , H03F3/183 , H03F3/187 , H03F2200/03 , H03F2200/129 , H03F2200/15 , H03F2200/24 , H03F2200/294 , H03G1/0088 , H04R3/00 , H04R19/005 , H04R19/04 , H04R2201/003
摘要: This application relates to amplifier circuitry for amplifying a signal from a MEMS transducer. A super source follower circuit (40) is provided which includes a feedback path from its output node (Nout) to a control bias node (BC) in order to provide a preamplifier signal gain that may be greater than unity. A first transistor (M1) is configured to have its gate node connected to an input node (NIN) for receiving the input signal (VIN) and its drain node connected to an input node (X) of an output stage (A). The source node of the first transistor is connected to the output node (NOUT). A current source (I2) is configured to deliver a current to the drain node of the first transistor (M1), wherein the current source (I2) is controlled by a bias control voltage (VBC) at the bias control node (BC). A feedback impedance network (Z1) comprising a first port connected to the output node (NOUT) and a second port connected to the bias control node (BC) is provided.
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3.
公开(公告)号:US20170093353A1
公开(公告)日:2017-03-30
申请号:US14626580
申请日:2015-02-19
CPC分类号: H03G3/3036 , H03F1/0216 , H03F1/301 , H03F1/56 , H03F3/16 , H03F3/19 , H03F3/193 , H03F2200/129 , H03F2200/15 , H03F2200/18 , H03F2200/222 , H03F2200/24 , H03F2200/387 , H03F2200/451 , H03F2200/462
摘要: A feedback gate bias circuit for use in radio frequency amplifiers to more effectively control operation of LDFET, GaNFET, GaAsFET, and JFET type transistors used in such circuits. A transistor gate bias circuit that senses drain current and automatically adjusts or biases the gate voltage to maintain drain current independently of temperature, time, input drive, frequency, as well as from device to device variations. Additional circuits to provide temperature compensation, RF power monitoring and drain current control, RF output power leveler, high power gain block, and optional digital control of various functions. A gate bias circuit including a bias sequencer and negative voltage deriver for operation of N-channel depletion mode devices.
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公开(公告)号:US09595927B2
公开(公告)日:2017-03-14
申请号:US14461905
申请日:2014-08-18
申请人: Cree, Inc.
发明人: Kyle Baker
CPC分类号: H03F1/56 , H03F1/0261 , H03F3/195 , H03F3/602 , H03F2200/192 , H03F2200/198 , H03F2200/204 , H03F2200/222 , H03F2200/24 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03F2200/555 , H04B1/0475
摘要: Circuitry includes a balanced amplifier and bias adjustment circuitry. The bias adjustment circuitry is coupled to the balanced amplifier and is configured to measure an RF termination voltage across an output termination impedance of the balanced amplifier and adjust a bias voltage supplied to the balanced amplifier based on the RF termination voltage. Notably, the RF termination voltage is proportional to a voltage standing wave ratio (VSWR) of the balanced amplifier, and thus enables an accurate measurement thereof. By using the RF termination voltage to adjust a bias voltage supplied to the balanced amplifier, overvoltage and/or thermally stressing conditions of the balanced amplifier as a result of high VSWR may be avoided while simultaneously avoiding the need for large or expensive isolation circuitry.
摘要翻译: 电路包括平衡放大器和偏置调整电路。 偏置调整电路耦合到平衡放大器,并且被配置为测量跨平衡放大器的输出端接阻抗的RF终端电压,并根据RF终端电压调整提供给平衡放大器的偏置电压。 值得注意的是,RF终端电压与平衡放大器的电压驻波比(VSWR)成比例,因此能够进行准确的测量。 通过使用RF终端电压来调节提供给平衡放大器的偏置电压,可以避免由于高VSWR而导致的平衡放大器的过压和/或热应力条件,同时避免对大型或昂贵的隔离电路的需要。
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公开(公告)号:US20160320781A1
公开(公告)日:2016-11-03
申请号:US15207362
申请日:2016-07-11
发明人: David M. SIGNOFF , Ming HE , Wayne A. LOEB
CPC分类号: H03F3/245 , G05F1/46 , H03F1/301 , H03F1/308 , H03F3/195 , H03F3/265 , H03F3/505 , H03F2200/24 , H03F2200/451 , H03F2200/453 , H03F2200/534 , H03F2200/555 , H03F2200/69 , H03H7/0107
摘要: A circuit includes a bias circuit for a biased transistor. The bias circuit includes a master-slave source follower circuit, a reference transistor, and a bias circuit voltage output coupled to the biased transistor and configured to provide a bias voltage. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor. A signal ground circuit may be coupled between the biased transistor and one or more components of the bias circuit that do not generate significant return currents to a power supply ground. A method includes generating a current in a reference transistor according to a first voltage generated using a master source follower circuit, generating a second voltage substantially identical to the first voltage using a slave source follower circuit, and providing the second voltage to a biased transistor. The reference transistor has a transconductance substantially identical to a transconductance of the biased transistor.
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公开(公告)号:US20150318829A1
公开(公告)日:2015-11-05
申请号:US14700666
申请日:2015-04-30
发明人: Santosh Astgimath
CPC分类号: H03F3/505 , H03F1/0205 , H03F1/26 , H03F3/183 , H03F3/187 , H03F2200/03 , H03F2200/129 , H03F2200/15 , H03F2200/24 , H03F2200/294 , H03G1/0088 , H04R3/00 , H04R19/005 , H04R19/04 , H04R2201/003
摘要: This application relates to amplifier circuitry for amplifying a signal from a MEMS transducer. A super source follower circuit (40) is provided which includes a feedback path from its output node (Nout) to a control bias node (BC) in order to provide a preamplifier signal gain that may be greater than unity. A first transistor (M1) is configured to have its gate node connected to an input node (NIN) for receiving the input signal (VIN) and its drain node connected to an input node (X) of an output stage (A). The source node of the first transistor is connected to the output node (NOUT). A current source (I2) is configured to deliver a current to the drain node of the first transistor (M1), wherein the current source (I2) is controlled by a bias control voltage (VBC) at the bias control node (BC). A feedback impedance network (Z1) comprising a first port connected to the output node (NOUT) and a second port connected to the bias control node (BC) is provided.
摘要翻译: 本申请涉及用于放大来自MEMS换能器的信号的放大器电路。 提供了超源跟随器电路(40),其包括从其输出节点(Nout)到控制偏置节点(BC)的反馈路径,以便提供可以大于1的前置放大器信号增益。 第一晶体管(M1)被配置为使其栅极节点连接到输入节点(NIN),用于接收连接到输出级(A)的输入节点(X)的输入信号(VIN)及其漏极节点。 第一晶体管的源节点连接到输出节点(NOUT)。 电流源(I2)被配置为将电流传送到第一晶体管(M1)的漏极节点,其中电流源(I2)由偏置控制节点(BC)处的偏置控制电压(VBC)控制。 提供了包括连接到输出节点(NOUT)的第一端口和连接到偏置控制节点(BC)的第二端口的反馈阻抗网络(Z1)。
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7.
公开(公告)号:US20120194380A1
公开(公告)日:2012-08-02
申请号:US13092133
申请日:2011-04-21
申请人: Chen-Chia Huang , Chun-Ching Wang , Cho-Hsuan Wu
发明人: Chen-Chia Huang , Chun-Ching Wang , Cho-Hsuan Wu
CPC分类号: G01S19/235 , G01S19/23 , H03F1/301 , H03F3/193 , H03F2200/15 , H03F2200/24 , H03F2200/447
摘要: A temperature compensating device for providing active bias for an amplifier includes a voltage source, a plurality of loads, and a current generator for generating a current for the amplifier according to voltages provided by the voltage source and the plurality of loads, wherein a first load of the plurality of loads is a thermistor utilized for keeping the current within a specified range under a plurality of ambient temperatures.
摘要翻译: 用于为放大器提供有源偏置的温度补偿装置包括电压源,多个负载以及用于根据由电压源和多个负载提供的电压产生用于放大器的电流的电流发生器,其中第一负载 多个负载中的一个是用于在多个环境温度下将电流保持在规定范围内的热敏电阻。
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8.
公开(公告)号:US20100066454A1
公开(公告)日:2010-03-18
申请号:US12233307
申请日:2008-09-18
申请人: Zhenqiang Ma , Guogong Wang , Guoxuan Qin
发明人: Zhenqiang Ma , Guogong Wang , Guoxuan Qin
IPC分类号: H03F3/04
CPC分类号: H03F3/245 , H03F1/0261 , H03F3/195 , H03F2200/15 , H03F2200/24 , H03F2200/72
摘要: A common-base amplifier for a bipolar junction transistor or a heterojunction bipolar transistor employs an active current source output biasing to provide for improved power output in a power saturation region providing increased power for a given transistor area such as may be advantageous in mobile radio transmitters or the like.
摘要翻译: 用于双极结型晶体管或异质结双极晶体管的公共基极放大器采用有源电流源输出偏置来提供功率饱和区域中改善的功率输出,为给定晶体管区域提供增加的功率,例如在移动无线电发射机 或类似物。
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公开(公告)号:US20090289716A1
公开(公告)日:2009-11-26
申请号:US12154648
申请日:2008-05-23
申请人: Kent Jaeger , Lawrence E. Connell
发明人: Kent Jaeger , Lawrence E. Connell
IPC分类号: H03F3/45
CPC分类号: H03F1/0272 , H03F3/195 , H03F3/45183 , H03F2200/24 , H03F2200/451 , H03F2203/45271 , H03F2203/45292 , H03F2203/45322 , H03F2203/45581 , H03F2203/45612
摘要: Methods and corresponding systems for amplifying an input signal include inputting first and second differential input signals into first and second circuit legs, respectively, wherein the first circuit leg includes a first transistor coupled in series with a first variable current source, and wherein the second circuit leg includes a second transistor coupled in series with a second variable current source. The first and second variable current sources are dynamically set to provide first and second bias currents in response to the first and second differential input signals, wherein the first bias current is set inversely proportional to the second bias current. The first and second bias currents are sunk in the first and second circuit legs, respectively. First and second differential output signals are output from the first and second circuit legs, respectively.
摘要翻译: 用于放大输入信号的方法和相应系统包括分别将第一和第二差分输入信号输入到第一和第二电路支路,其中第一电路支路包括与第一可变电流源串联耦合的第一晶体管,并且其中第二电路 腿包括与第二可变电流源串联耦合的第二晶体管。 动态地设置第一和第二可变电流源以响应于第一和第二差分输入信号提供第一和第二偏置电流,其中第一偏置电流与第二偏置电流成反比地设定。 第一和第二偏置电流分别在第一和第二电路支路中沉没。 第一和第二差分输出信号分别从第一和第二电路支路输出。
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公开(公告)号:US07208974B1
公开(公告)日:2007-04-24
申请号:US11142176
申请日:2005-05-31
申请人: Siew Yong Chui
发明人: Siew Yong Chui
IPC分类号: H03K19/003 , H03K17/16
CPC分类号: H03K19/01721 , H03F1/301 , H03F3/347 , H03F3/505 , H03F2200/24 , H03F2203/5027 , H03K19/018521
摘要: Circuits and methods are provided for producing a rail-to-rail output voltage. A circuit includes a level shifter, a source follower, and a current compensation circuit. The level shifter receives an input signal and applies a compensation voltage to the input signal relative to a voltage level of the input signal in steady-state. The source follower produces an output signal and, responsive to variations in the voltage level of the input signal, changes the voltage level of the output signal using a biasing current. The current compensation circuit, responsive to a difference between the voltage levels of the input and output signals, varies an amount of the biasing current.
摘要翻译: 电路和方法用于产生轨到轨输出电压。 电路包括电平移位器,源极跟随器和电流补偿电路。 电平移位器接收输入信号,并相对于输入信号在稳态的电压电平向输入信号施加补偿电压。 源极跟随器产生输出信号,并且响应于输入信号的电压电平的变化,使用偏置电流来改变输出信号的电压电平。 电流补偿电路响应于输入和输出信号的电压电平之差,改变偏置电流的量。
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