公开(公告)号：US11810994B2

公开(公告)日：2023-11-07

申请号：US17298021

申请日：2019-11-23

申请人： Xi An Technological University

发明人： Huan Liu ,  Yan An ,  Weiguo Liu ,  Jun Han ,  Changlong Cai ,  Minyu Bai ,  Zhuoman Wang

IPC分类号： H01L31/109 ,  H01L31/0224 ,  H01L31/101 ,  H01L31/18

CPC分类号： H01L31/109 ,  H01L31/022408 ,  H01L31/1016 ,  H01L31/1868

摘要： The invention relates to an infrared-transmitting high-sensitivity visible light detector and its preparation method. The detector is composed of passivation layer (14), upper electrode (13), heterojunction (15), lower electrode (3), and intrinsic monocrystalline silicon substrate (2). The upper electrode (13) is the material that is electrically conductive and transparent to visible light and infrared light. The heterojunction (15) is divided into heterojunction upper layer (5) and heterojunction lower layer (4), wherein the upper heterojunction layer (5) is a nano film sensitive to visible light and capable of transmitting infrared ray, and the lower heterojunction layer (4) is intrinsic monocrystalline silicon. When visible light and infrared light pass through the upper electrode (13) and the heterojunction upper layer (5), the visible light excites electron-hole pairs in the heterojunction (15), which are collected by the upper and lower electrodes and flow out through longitudinally arranged metal columns, while infrared light passes through the whole detection structure, so that visible light can be detected without affecting infrared transmission. The distance between the electrode and the junction zone is very small, which can reduce the recombination rate of electron-hole pairs before reaching the electrode and improve the collection efficiency of photo-generated carriers. The structural design of longitudinal metal reduces light shielding and improves sensitivity.

公开(公告)号：US11757059B2

公开(公告)日：2023-09-12

申请号：US17040989

申请日：2020-03-24

申请人： BOE Technology Group Co., Ltd.

发明人： Shengguang Ban

IPC分类号： H01L31/105 ,  H01L31/101 ,  H01L31/20 ,  G06V40/13

CPC分类号： H01L31/1055 ,  H01L31/1016 ,  H01L31/202 ,  G06V40/1318

摘要： A photosensitive sensor, a manufacturing method thereof and a display panel are provided. The photosensitive sensor includes a first type semiconductor layer, an intrinsic semiconductor layer disposed on a side of the first type semiconductor layer, and a second type semiconductor layer disposed on a side of the intrinsic semiconductor layer away from the first type semiconductor layer. The intrinsic semiconductor layer is provided with metal particles capable of generating a surface plasmon effect. The metal particles are dispersely distributed in the intrinsic semiconductor layer.

公开(公告)号：US20190044007A1

公开(公告)日：2019-02-07

申请号：US15767605

申请日：2017-09-22

申请人： BOE TECHNOLOGY GROUP CO., LTD.

发明人： Jianming SUN ,  Rui HUANG ,  Huili WU

IPC分类号： H01L31/0224 ,  G06K9/00 ,  H01L31/18 ,  H01L31/101 ,  H01L31/105

CPC分类号： H01L31/022483 ,  G06K9/0004 ,  H01L27/1443 ,  H01L27/1446 ,  H01L29/786 ,  H01L31/1013 ,  H01L31/1016 ,  H01L31/105 ,  H01L31/1884

摘要： The present disclosure relates to a semiconductor device, an array substrate, and a method for fabricating the semiconductor device. The semiconductor device comprises a substrate, a thin film transistor formed on the substrate, and a first light detection structure adjacent to the thin film transistor, wherein the first light detection structure includes a first bottom electrode, a top electrode, and a first photo-sensing portion disposed between the first bottom electrode and the first top electrode, one of a source electrode and a drain electrode of the thin film transistor is disposed in the same layer as the first bottom electrode of the first light detection structure; the other of the source electrode and the drain electrode of the thin film transistor is used as the first top electrode.

公开(公告)号：US09130085B2

公开(公告)日：2015-09-08

申请号：US13857484

申请日：2013-04-05

申请人： Nokia Corporation

发明人： Alan Colli

IPC分类号： H01L31/0352 ,  H01L31/028 ,  H01L31/101 ,  H01L31/113

CPC分类号： H01L31/035218 ,  H01L31/028 ,  H01L31/1013 ,  H01L31/1016 ,  H01L31/112 ,  H01L31/113 ,  Y02E10/547

摘要： An apparatus comprises a graphene film; a first arrangement of quantum dots of a first type located in contact with the graphene film as a first monolayer; a second arrangement of quantum dots of a second type located in contact with the graphene film as a second monolayer; an input voltage source connected to an end of the graphene film; and an output voltage probe connected to the graphene film between the first arrangement of quantum dots and the second arrangement of quantum dots.

摘要翻译： 一种装置包括石墨烯膜; 位于与作为第一单层的石墨烯膜接触的第一类型的量子点的第一布置; 位于与石墨烯膜接触的第二类型的量子点的第二布置作为第二单层; 连接到所述石墨烯膜的端部的输入电压源; 以及连接到量子点的第一布置和量子点的第二布置之间的石墨烯膜的输出电压探针。

公开(公告)号：US06404031B1

公开(公告)日：2002-06-11

申请号：US09192584

申请日：1998-11-17

申请人： Kazuhiro Hane ,  Minoru Sasaki

发明人： Kazuhiro Hane ,  Minoru Sasaki

IPC分类号： H01L3106

CPC分类号： H01L31/1016 ,  H01L31/02024 ,  H01L31/035281 ,  H01L31/03529 ,  Y02E10/50

摘要： If a semiconductor device employing semiconductor light-receiving elements is disposed on a single optical axis, laser light which is incident on these light-receiving elements is interrupted by the semiconductor device, and it will be impossible to confirm as a whole that the alignment of a multiplicity of components disposed over a distance has been correctly adjusted. This problem is overcome by using a semiconductor light-receiving element with a structure which absorbs only some of a received laser light beam and which allows the greater part of the beam to be transmitted to its rear face.

摘要翻译： 如果在单个光轴上设置采用半导体光接收元件的半导体器件，则入射到这些受光元件上的激光被半导体器件中断，并且不可能将整体上确定为 设置在一定距离上的多个部件已被正确地调整。 通过使用具有仅吸收一些接收到的激光束的结构的半导体光接收元件来克服这个问题，并且允许大部分光束被传输到其后表面。

公开(公告)号：US4716449A

公开(公告)日：1987-12-29

申请号：US6327

申请日：1987-01-14

申请人： David A. B. Miller

发明人： David A. B. Miller

IPC分类号： G02F1/017 ,  G02F1/17 ,  G02F1/21 ,  G02F1/35 ,  G02F3/02 ,  H01L31/0352 ,  H01L31/101 ,  H01L27/14

CPC分类号： B82Y20/00 ,  G02F1/017 ,  G02F1/01716 ,  G02F1/17 ,  G02F1/174 ,  G02F1/218 ,  G02F1/3511 ,  G02F3/028 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1016 ,  G02F1/01708

摘要： The invention is a nonlinear or bistable optical device having a low switching energy. The invention uses a means responsive to light for generating a photocurrent, a structure having a semiconductor quantum well region, and means responsive to the photocurrent for electrically controlling an optical absorption of the semiconductor quantum well region. The optical absorption of the semiconductor quantum well region varies in response to variations in the photocurrent. A photodiode or phototransistor may be used as the means responsive to light, and may be made integral with the structure having the semiconductor quantum well region. An array of devices may be fabricated on a single chip for parallel logic processing.

摘要翻译： 本发明是具有低开关能量的非线性或双稳态光学器件。 本发明使用响应于光产生光电流的装置，具有半导体量子阱区的结构，以及响应于光电流的装置，用于电控制半导体量子阱区的光吸收。 半导体量子阱区的光吸收随着光电流的变化而变化。 可以使用光电二极管或光电晶体管作为响应于光的装置，并且可以与具有半导体量子阱区的结构一体化。 可以在单个芯片上制造器件阵列用于并行逻辑处理。

公开(公告)号：US11764333B2

公开(公告)日：2023-09-19

申请号：US17037304

申请日：2020-09-29

申请人： BOLB INC.

发明人： Jianping Zhang ,  Ling Zhou ,  Ying Gao

IPC分类号： H01L33/40 ,  H01L33/06 ,  H01L33/32 ,  H01L31/0224 ,  H01L31/101 ,  H01L33/14 ,  H01L31/0304

CPC分类号： H01L33/405 ,  H01L31/022408 ,  H01L33/06 ,  H01L33/325 ,  H01L31/03048 ,  H01L31/1016 ,  H01L33/14 ,  H01L2933/0016

摘要： A light emitting diode includes an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.

公开(公告)号：US09198298B2

公开(公告)日：2015-11-24

申请号：US13697173

申请日：2011-12-19

申请人： Masayuki Iwase ,  Kazuyuki Ozaki

发明人： Masayuki Iwase ,  Kazuyuki Ozaki

IPC分类号： H01B13/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461 ,  H05K3/06 ,  H01L21/027 ,  H01L33/42 ,  H01L31/101 ,  H05K1/09 ,  H01L31/18 ,  H05K1/03

CPC分类号： H05K3/061 ,  H01L21/0273 ,  H01L31/1016 ,  H01L31/1884 ,  H01L31/1888 ,  H01L33/42 ,  H05K1/03 ,  H05K1/09 ,  H05K2201/0108 ,  H05K2201/0329 ,  H05K2203/0264

摘要： To peel an etching resist easily and reliably without damaging a transparent conductive layer coated with the etching resist. A method for manufacturing a transparent printed circuit in an embodiment of the present invention includes: providing a transparent conductive sheet 3 having a transparent base material 1 and a transparent conductive layer 2 formed on the transparent base material 1, forming an etching resist 4 having a specified pattern on the transparent conductive layer 2, etching the transparent conductive layer 2 with the etching resist 4 as a mask, forming a peeling film 5 on the etching resist 4 and on the transparent base material 1 exposed by etching of the transparent conductive layer 2 so as to cover an area where the etching resist 4 is formed, and peeling the peeling film 5 together with the etching resist 4.

摘要翻译： 可以容易且可靠地剥离蚀刻抗蚀剂，而不会损坏涂覆有抗蚀剂的透明导电层。 本发明的实施方式的透明印刷电路的制造方法包括：提供透明基材1和形成在透明基材1上的透明导电层2的透明导电片3，形成具有 在透明导电层2上指定图案，用抗蚀剂4作为掩模蚀刻透明导电层2，在抗蚀剂4上形成剥离膜5和通过透明导电层2的蚀刻而暴露的透明基材1上 以覆盖形成抗蚀剂4的区域，并与剥离抗蚀剂4一起剥离剥离膜5。

公开(公告)号：US20140299741A1

公开(公告)日：2014-10-09

申请号：US13857484

申请日：2013-04-05

申请人： NOKIA CORPORATION

发明人： Alan Colli

IPC分类号： H01L31/0352

CPC分类号： H01L31/035218 ,  H01L31/028 ,  H01L31/1013 ,  H01L31/1016 ,  H01L31/112 ,  H01L31/113 ,  Y02E10/547

摘要： An apparatus comprises a graphene film; a first arrangement of quantum dots of a first type located in contact with the graphene film as a first monolayer; a second arrangement of quantum dots of a second type located in contact with the graphene film as a second monolayer; an input voltage source connected to an end of the graphene film; and an output voltage probe connected to the graphene film between the first arrangement of quantum dots and the second arrangement of quantum dots.

摘要翻译： 一种装置包括石墨烯膜; 位于与作为第一单层的石墨烯膜接触的第一类型的量子点的第一布置; 位于与石墨烯膜接触的第二类型的量子点的第二布置作为第二单层; 连接到所述石墨烯膜的端部的输入电压源; 以及连接到量子点的第一布置和量子点的第二布置之间的石墨烯膜的输出电压探针。

公开(公告)号：US07042015B2

公开(公告)日：2006-05-09

申请号：US09924840

申请日：2001-08-08

申请人： Decai Sun ,  Eric Peeters ,  Christopher L. Chua ,  Francesco Lemmi ,  Patrick Y. Maeda ,  Scott Solberg

发明人： Decai Sun ,  Eric Peeters ,  Christopher L. Chua ,  Francesco Lemmi ,  Patrick Y. Maeda ,  Scott Solberg

IPC分类号： H01L31/12

CPC分类号： H01L31/1055 ,  B41J2/45 ,  H01L25/0753 ,  H01L31/1016 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01S5/02 ,  H01S5/0262 ,  H01S5/4025 ,  H01L2924/00

摘要： A light-producing device integrated with a power monitoring system include a light-producing device from which light is emitted in wavelengths that can range from approximately 700 nm to approximately 3 microns. A semi-transparent sensor is located such that at least a portion of the light emitted passes through the semi-transparent sensor and at least a portion of light is absorbed by the semi-transparent sensor. The semi-transparent sensor is configured to be semi-transparent at wavelengths that can range from 700 nm to 3 microns. The semi-transparent sensor may also be used with an external light source, for example with fiber-optic cables.