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72 条记录 (耗时 0.037 秒)

    Micro-mirror and a method for fabricating the same
    2.
    发明授权
    Micro-mirror and a method for fabricating the same 失效
    微镜及其制造方法

    公开(公告)号：US07173748B2

    公开(公告)日：2007-02-06

    申请号：US11297929

    申请日：2005-12-08

    申请人： Masaki Hara ,  Takuya Makino ,  Kazuhito Hori ,  Kazuhiro Hane ,  Minoru Sasaki

    发明人： Masaki Hara ,  Takuya Makino ,  Kazuhito Hori ,  Kazuhiro Hane ,  Minoru Sasaki

    IPC分类号： G02B26/08

    CPC分类号： G02B26/0866 ,  G02B26/0833 ,  Y10S359/904

    摘要： A micro-mirror for deflecting an incident light is disclosed, wherein the micro-mirror comprises: a mirror section for reflecting an incident light issued from a laser diode; a hinge section including a fixed section and a movable section each having a flat surface; and a drive section having a bi-morph structure made of two or more of materials having different heat expansion coefficient for deflecting said mirror section to change relative angle to said incident light.

    摘要翻译： 公开了一种用于偏转入射光的微镜，其中微镜包括：用于反射从激光二极管发出的入射光的反射镜部分; 铰链部分，其包括固定部分和每个具有平坦表面的可动部分; 以及具有由两种或更多种具有不同热膨胀系数的材料制成的双变形结构的驱动部分，用于偏转所述镜部分以改变与所述入射光的相对角度。

    Transparent semiconductor light-receiving element and manufacturing method thereof
    4.
    发明授权
    Transparent semiconductor light-receiving element and manufacturing method thereof 失效
    透明半导体光接收元件及其制造方法

    公开(公告)号：US06404031B1

    公开(公告)日：2002-06-11

    申请号：US09192584

    申请日：1998-11-17

    申请人： Kazuhiro Hane ,  Minoru Sasaki

    发明人： Kazuhiro Hane ,  Minoru Sasaki

    IPC分类号： H01L3106

    CPC分类号： H01L31/1016 ,  H01L31/02024 ,  H01L31/035281 ,  H01L31/03529 ,  Y02E10/50

    摘要： If a semiconductor device employing semiconductor light-receiving elements is disposed on a single optical axis, laser light which is incident on these light-receiving elements is interrupted by the semiconductor device, and it will be impossible to confirm as a whole that the alignment of a multiplicity of components disposed over a distance has been correctly adjusted. This problem is overcome by using a semiconductor light-receiving element with a structure which absorbs only some of a received laser light beam and which allows the greater part of the beam to be transmitted to its rear face.

    摘要翻译： 如果在单个光轴上设置采用半导体光接收元件的半导体器件，则入射到这些受光元件上的激光被半导体器件中断，并且不可能将整体上确定为 设置在一定距离上的多个部件已被正确地调整。 通过使用具有仅吸收一些接收到的激光束的结构的半导体光接收元件来克服这个问题，并且允许大部分光束被传输到其后表面。

    PROCESS FOR PRODUCING SEMI-SOLIDIFIED SLURRY OF IRON ALLOY
    7.
    发明申请
    PROCESS FOR PRODUCING SEMI-SOLIDIFIED SLURRY OF IRON ALLOY 审中-公开
    生产钢铁合金的半固化浆料的方法

    公开(公告)号：US20120055284A1

    公开(公告)日：2012-03-08

    申请号：US13234377

    申请日：2011-09-16

    申请人： Syuichi Shikai ,  Yasushi Fujinaga ,  Minoru Sasaki ,  Yoshihito Isshiki ,  Susumu Nishikawa

    发明人： Syuichi Shikai ,  Yasushi Fujinaga ,  Minoru Sasaki ,  Yoshihito Isshiki ,  Susumu Nishikawa

    IPC分类号： C21C7/00 ,  C22B9/00

    CPC分类号： F27B14/14 ,  C21C1/08 ,  C21C5/5241 ,  C21D1/42 ,  C21D5/00 ,  C22C33/08 ,  C22C37/10 ,  F27B14/20 ,  Y02P10/253

    摘要： A process for producing a semi-solidified slurry of an iron alloy including the steps of pouring a melt of an iron alloy into a semi-solidified slurry producing vessel 30 and cooling the melt therein to obtain a semi-solidified slurry having a crystallized solid phase and a residual liquid phase, wherein a hypereutectoid or hypoeutectic cast iron composition containing 0.8-4.3 wt. % C is used as a material, a melt of the composition is poured into the semi-solidified slurry producing vessel in a predetermined amount at a time, a temperature of the melt when poured into the semi-solidified slurry producing vessel is controlled to be not lower than a crystallization initiation temperature of the composition and not greater than a temperature that is 50° C. higher than the crystallization initiation temperature, and a cooling rate of the melt poured into the semi-solidified slurry producing vessel is controlled not to exceed 20° C. per minute.

    摘要翻译： 一种铁合金的半固化浆料的制造方法，其特征在于，包括将铁合金熔体倒入半固化浆料制造容器30中并冷却其中的熔融液，得到具有结晶固相的半固化浆料 和残余液相，其中含有0.8-4.3重量％的过共析体或亚共晶铸铁组合物。 使用％C作为材料，将组合物的熔融物一次以规定量注入半固化浆料生成容器中，将熔融物注入半固化浆料制造容器时的温度控制为 不低于组合物的结晶起始温度，不高于比结晶起始温度高50℃的温度，并且将浇注到半固化浆料生产容器中的熔体的冷却速度控制在不超过 每分钟20°C

    Noise filter
    8.
    发明申请
    Noise filter 有权
    噪声滤波器

    公开(公告)号：US20090115551A1

    公开(公告)日：2009-05-07

    申请号：US11990560

    申请日：2006-08-11

    申请人： Hidekazu Kobayashi ,  Yasuhiko Nishioka ,  Minoru Sasaki ,  Seigen Maeno

    发明人： Hidekazu Kobayashi ,  Yasuhiko Nishioka ,  Minoru Sasaki ,  Seigen Maeno

    IPC分类号： H03H7/01 ,  H01F27/06

    CPC分类号： H01F17/045 ,  H01F27/02 ,  H01F27/04 ,  H01F27/06 ,  H01F2017/065 ,  H03H2001/0092

    摘要： The invention can provide a miniaturized noise filter. The noise filter for reducing noise comprises a coil with a conductive wire (2) wound around a core (1); a case (6) formed of an insulating material receiving the coil; a bracket (8) of a magnetic material forming a flux path of magnetic flux generated from the coil, which places the case thereon, which has a pair of end plates (12a, 12b) disposed opposite to both ends of the core of the coil respectively through a gap of a predetermined distance, and which has a bottom plate (8a) disposed between the pair of the end plates; and an input/output terminal (3a, 3b) for the coil.

    摘要翻译： 本发明可以提供一种小型噪声滤波器。 用于降低噪声的噪声滤波器包括具有缠绕在芯（1）上的导线（2）的线圈; 由接收线圈的绝缘材料形成的壳体（6） 形成从线圈产生的磁通量通量的磁性材料的支架（8），该磁通量放置在其上的壳体，其具有与线圈的芯的两端相对设置的一对端板（12a，12b） 分别通过预定距离的间隙，并且具有设置在所述一对端板之间的底板（8a） 以及用于线圈的输入/输出端子（3a，3b）。

    HETEROMONOCYCLIC COMPOUND AND USE THEREOF
    9.
    发明申请
    HETEROMONOCYCLIC COMPOUND AND USE THEREOF 审中-公开
    异环化合物及其用途

    公开(公告)号：US20080207654A1

    公开(公告)日：2008-08-28

    申请号：US11943910

    申请日：2007-11-21

    申请人： Takanobu Kuroita ,  Hiroki Sakamoto ,  Hideyuki Igawa ,  Minoru Sasaki ,  Kouhei Asano ,  Tsuyoshi Maekawa

    发明人： Takanobu Kuroita ,  Hiroki Sakamoto ,  Hideyuki Igawa ,  Minoru Sasaki ,  Kouhei Asano ,  Tsuyoshi Maekawa

    IPC分类号： A61K31/506 ,  C07D239/22 ,  A61P3/10 ,  A61P3/04

    CPC分类号： C07D413/14 ,  C07D413/10 ,  C07D417/14

    摘要： A compound represented by the formula (I): wherein R1 is an oxo group, ═N—R or the like; a group represented by the formula: is a group represented by the formula: R2 is a group represented by the formula: R3 and R4 are each H, or C1-C6 alkyl, C3-C6 cycloalkyl, C1-C6 alkoxy, C1-C6 alkylamino, di(C1-C6)alkylamino or C1-C6 alkylthio, each of which is optionally substituted; and R5 is H, or C1-C6 alkyl, C2-C6 alkenyl, cyclic group, each of which is optionally substituted, —CO—R8 or —O—R8′, or a salt thereof. The compound of the present invention is useful as a drug for the prophylaxis or treatment of circulatory diseases, metabolic diseases and/or central nervous system diseases.

    摘要翻译： 由式（I）表示的化合物：其中R1是氧代基，-N-R等; 由下式表示的基团是由下式表示的基团：R 2是由下式表示的基团：R 3和R 4各自为H或C 1 -C 6烷基，C 3 -C 6环烷基，C 1 -C 6烷氧基，C 1 -C 6 烷基氨基，二（C 1 -C 6）烷基氨基或C 1 -C 6烷硫基，其各自任选被取代; 和R 5为H或C 1 -C 6烷基，C 2 -C 6烯基，环状基团，各自为任选取代的-CO-R 8或-O-R 8'或其盐。 本发明的化合物可用作预防或治疗循环系统疾病，代谢疾病和/或中枢神经系统疾病的药物。

    Electron beam drawing apparatus
    10.
    发明授权
    Electron beam drawing apparatus 失效
    电子束描绘装置

    公开(公告)号：US06246064B1

    公开(公告)日：2001-06-12

    申请号：US09605879

    申请日：2000-06-29

    申请人： Minoru Sasaki ,  Yuji Tange ,  Yutaka Hojyo ,  Kazuyoshi Oonuki ,  Hiroyuki Itoh

    发明人： Minoru Sasaki ,  Yuji Tange ,  Yutaka Hojyo ,  Kazuyoshi Oonuki ,  Hiroyuki Itoh

    IPC分类号： H01J3730

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/3175

    摘要： An electron beam drawing process of high throughput, coping with the changes in static distortion and dynamic distortion of a lower layer exposure apparatus or an optical reduction exposure apparatus. At least two marks formed in each chip formed on a wafer are detected for a predetermined number of chips, and the relation between the shape distortion of each chip in the wafer plane and the wafer coordinates is determined from the positions of the detected marks and the designed positions of the marks by a statistical processing. Patterns are drawn in all chips while correcting the patterns to be drawn on the individual chips, by using the relation between the determined chip shape distortion and the wafer coordinates. As a result, the superposition exposure with the lower layer can be with a high throughput and with a high accuracy without any manual adjustment.

    摘要翻译： 一种高产量的电子束拉制工艺，能够应对下层曝光装置或光学还原曝光装置的静态失真和动态变形的变化。 对于预定数量的芯片，检测在晶片上形成的每个芯片中形成的至少两个标记，并且根据检测到的标记和晶片坐标的位置确定晶片平面中每个芯片的形状失真与晶片坐标之间的关系 通过统计处理设计标记的位置。 通过使用确定的芯片形状失真和晶片坐标之间的关系来校正在各个芯片上绘制的图案，在所有芯片中绘制图案。 结果，与下层的重叠曝光可以具有高产量和高精度而无需任何手动调节。