- 专利标题： P-ohmic contact structure and light emitting device using the same
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申请号： US17037304申请日： 2020-09-29
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公开(公告)号： US11764333B2公开(公告)日： 2023-09-19
- 发明人: Jianping Zhang , Ling Zhou , Ying Gao
- 申请人： BOLB INC.
- 申请人地址： US CA San Jose
- 专利权人： BOLB INC.
- 当前专利权人： BOLB INC.
- 当前专利权人地址： US CA Livermore
- 代理机构： J.C. PATENTS
- 主分类号： H01L33/40
- IPC分类号： H01L33/40 ; H01L33/06 ; H01L33/32 ; H01L31/0224 ; H01L31/101 ; H01L33/14 ; H01L31/0304
摘要：
A light emitting diode includes an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.
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