公开(公告)号：US20190245107A1

公开(公告)日：2019-08-08

申请号：US16388631

申请日：2019-04-18

申请人： KYOCERA CORPORATION

发明人： Akira MURAO ,  Norihiko MATSUSHIMA

IPC分类号： H01L31/061 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC分类号： H01L31/061 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/1804 ,  H01L31/1868

摘要： The solar cell element comprises a semiconductor substrate with first and second surfaces, a passivation layer, a protective layer positioned on the passivation layer on the second surface, and a collector electrode. The collector electrode includes a first portion on the protective layer, and a second portion connected to the second surface in a plurality of hole rows each including holes that penetrate the passivation layer and the protective layer and are arranged along a first direction. When first and second hole rows adjacent in a second direction that intersects with the first direction are viewed in a plane perspective facing the second direction, the second hole row includes a third hole that overlaps a gap between first and second holes in a mutually adjacent state in the first hole row and further overlaps a part of at least one of the first and second holes.

公开(公告)号：US09748415B2

公开(公告)日：2017-08-29

申请号：US15360553

申请日：2016-11-23

申请人： National Technology & Engineering Solutions of Sandia, LLC

发明人： Murat Okandan ,  Gregory N. Nielson ,  Jose Luis Cruz-Campa ,  Carlos Anthony Sanchez

IPC分类号： H01L31/02 ,  H01L31/061 ,  H01L31/18

CPC分类号： H01L31/02021 ,  H01L21/02118 ,  H01L21/2885 ,  H01L21/311 ,  H01L21/76802 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/5386 ,  H01L31/02008 ,  H01L31/022441 ,  H01L31/0516 ,  H01L31/061 ,  H01L31/18 ,  H01L31/1876 ,  Y02E10/50

摘要： A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the device layer and metal interconnect such that the deposited interconnect is electrically connected to at least two of the device cells; depositing a second dielectric layer over the interconnect; and exposing at least one contact point on the interconnect through the second dielectric layer. An apparatus including a substrate having defined thereon a device layer including a plurality of device cells; a first dielectric layer disposed directly on the device layer; a plurality of metal interconnects, each of which is electrically connected to at least two of the device cells; and a second dielectric layer disposed over the first dielectric layer and over the interconnects, wherein the second dielectric layer is patterned in a positive or negative planar spring pattern.

公开(公告)号：US20160190382A1

公开(公告)日：2016-06-30

申请号：US14825163

申请日：2015-08-12

申请人： Solexel, Inc.

发明人： Pawan Kapur

IPC分类号： H01L31/18 ,  H01L31/0376

CPC分类号： H01L31/1864 ,  H01L21/2257 ,  H01L21/268 ,  H01L31/03762 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A passivated surface and base and emitter regions in a silicon substrate are formed. Intrinsic amorphous silicon is formed on first surface of a silicon substrate. A first dopant is formed on the intrinsic amorphous silicon. A first laser beam is applied through the first dopant and forms a first doped region in the silicon substrate. A second dopant is formed on the intrinsic amorphous silicon. A second laser beam is applied through the second dopant and forms a second doped region in the silicon substrate.

摘要翻译： 形成硅衬底中的钝化表面和基极和发射极区域。 在硅衬底的第一表面上形成本征非晶硅。 在本征非晶硅上形成第一掺杂剂。 通过第一掺杂剂施加第一激光束，并在硅衬底中形成第一掺杂区域。 在本征非晶硅上形成第二掺杂剂。 通过第二掺杂剂施加第二激光束，并在硅衬底中形成第二掺杂区域。

公开(公告)号：US09299565B2

公开(公告)日：2016-03-29

申请号：US14009006

申请日：2012-02-23

申请人： Tim Boescke

发明人： Tim Boescke

IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L21/22 ,  H01L21/225 ,  H01L31/061

CPC分类号： H01L21/2254 ,  H01L31/061 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： In a method for producing a solar cell having a substrate made of crystalline silicon, on a surface of the Si substrate, a locally defined n-doped emitter region is produced by full-surface cold coating of the surface using a P-containing coating, followed by a local laser beam-doping of P atoms from the P-containing coating, and subsequent thermal driving in of the P atoms, starting from the doping-in region.

摘要翻译： 在具有由晶体硅制成的基板的太阳能电池的制造方法中，在Si基板的表面上，通过使用含P涂层的表面的全表面冷涂覆来制造局部限定的n掺杂发射极区域， 随后从含P涂层的P原子的局部激光束掺杂，以及随后从掺杂区域开始P原子的热驱动。

公开(公告)号：US20130056069A1

公开(公告)日：2013-03-07

申请号：US13665214

申请日：2012-10-31

申请人： NanoGram Corporation

发明人： Henry Hieslmair

IPC分类号： H01L31/0264

CPC分类号： H01L31/0682 ,  H01L21/228 ,  H01L21/268 ,  H01L31/02 ,  H01L31/022441 ,  H01L31/046 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/061 ,  H01L31/1804 ,  H02S40/32 ,  H02S50/10 ,  Y02E10/547 ,  Y02P70/521

摘要： Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.

摘要翻译： 光伏模块包括沿着电池背面具有相反极性的掺杂区域的太阳能电池。 掺杂区域可以位于通过介电钝化层的开口内。 在一些实施例中，太阳能电池由薄硅箔形成。 可以通过沿着半导体片的后表面印刷油墨来形成掺杂区域。 掺杂剂墨水可以包含具有所需掺杂剂的纳米颗粒。

公开(公告)号：US20120132266A1

公开(公告)日：2012-05-31

申请号：US13309318

申请日：2011-12-01

申请人： Joon-Dong KIM ,  Chang-Soo Han ,  Eung-Sug Lee ,  Byung-Ik Choi ,  Kyung-Hyun Whang

发明人： Joon-Dong KIM ,  Chang-Soo Han ,  Eung-Sug Lee ,  Byung-Ik Choi ,  Kyung-Hyun Whang

IPC分类号： H01L31/07 ,  B82Y99/00

CPC分类号： H01L31/035281 ,  B82Y20/00 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/061 ,  H01L31/07 ,  Y02E10/50

摘要： Provided is a photoelectric conversion device using a semiconductor nanomaterial, which converts light energy having photon energy into electrical energy, including: a substrate, a plurality of semiconductor nanomaterials arranged on the substrate, and a metal layer that is formed on the semiconductor nanomaterial and is joined with the semiconductor nanomaterial by a schottky junction, wherein electrical energy is generated by a rectified current generated between the semiconductor nanomaterial and the metal layer joined by the schottky junction.

摘要翻译： 提供了一种使用将具有光子能量的光能转换为电能的半导体纳米材料的光电转换装置，包括：基板，布置在基板上的多个半导体纳米材料和形成在半导体纳米材料上的金属层， 通过肖特基结与半导体纳米材料结合，其中通过在半导体纳米材料和通过肖特基结连接的金属层之间产生的整流产生电能。

公开(公告)号：US20080202577A1

公开(公告)日：2008-08-28

申请号：US12070381

申请日：2008-02-15

申请人： Henry Hieslmair

发明人： Henry Hieslmair

IPC分类号： H01L31/028 ,  H01L31/042 ,  B23K26/00 ,  H01L21/22

CPC分类号： H01L31/0682 ,  H01L21/228 ,  H01L21/268 ,  H01L31/02 ,  H01L31/022441 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/061 ,  H01L31/1804 ,  H02S40/32 ,  H02S50/10 ,  Y02E10/547 ,  Y02P70/521

摘要： Photovoltaic modules can be formed with a plurality of solar cells having different sized structures to improve module performance. The sized can be determined dynamically based on estimated properties of the semiconductor so that the current outputs of the cells in the module are more similar to each other. The modules can produce higher power relative to modules with similar equal sized cells that do not produce matched currents. Appropriate dynamic processing methods are described that include processing steps that provide adjustments of the processing according to the dynamic adjustments in cell designs.

摘要翻译： 光伏模块可以形成有具有不同尺寸结构的多个太阳能电池，以提高模块性能。 可以基于半导体的估计性质动态地确定尺寸，使得模块中的单元的电流输出彼此更相似。 这些模块可以产生相对于不具有匹配电流的类似相同尺寸电池的模块的更高功率。 描述了适当的动态处理方法，其包括根据小区设计中的动态调整来提供处理调整的处理步骤。

公开(公告)号：US20070295399A1

公开(公告)日：2007-12-27

申请号：US11763090

申请日：2007-06-14

申请人： David Carlson

发明人： David Carlson

IPC分类号： H01L31/00

CPC分类号： H01L31/022433 ,  H01L31/02363 ,  H01L31/061 ,  Y02E10/50

摘要： A photovoltaic cell comprising a wafer comprising a semiconductor material of a first conductivity type, the wafer comprising a first light receiving surface and a second surface opposite the first surface; a first passivation layer positioned over the first surface of the wafer; a first electrical contact comprising point contacts positioned over the second surface of the wafer and having a conductivity type opposite to that of the wafer; and a second electrical contact comprising point contacts and positioned over the second surface of the wafer and separated electrically from the first electrical contact and having a conductivity type the same as that of the wafer.

摘要翻译： 一种光伏电池，包括包括第一导电类型的半导体材料的晶片，所述晶片包括第一光接收表面和与所述第一表面相对的第二表面; 位于晶片的第一表面上的第一钝化层; 第一电触头，包括位于晶片的第二表面上并具有与晶片相反的导电类型的点触点; 以及包括点接触并定位在晶片的第二表面上并且与第一电触头电隔离并具有与晶片相同的导电类型的第二电触点。

公开(公告)号：US06552405B2

公开(公告)日：2003-04-22

申请号：US09916868

申请日：2001-07-26

申请人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

发明人： Shin Sugawara ,  Takeshi Kyoda ,  Hisao Arimune

IPC分类号： H01L3106

CPC分类号： H01L31/1804 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/061 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： A photoelectric conversion device according to the present invention comprises an aluminum substrate or a substrate formed with an aluminum layer thereon, numerous p type crystalline semiconductor particles deposited on the substrate, an insulator interposed among the numerous p type crystalline semiconductor particles, and a n type semiconductor region formed on the upper portions of the p type crystalline semiconductor particles. An alloy portion comprising the aluminum and the semiconductor material is formed in a boundary part between the aluminum layer and the p type crystalline semiconductor particles, and a p+ region is formed in an interfacial part between the alloy portion and the p type crystalline semiconductor particle on the side of the p type crystalline semiconductor particle. Accordingly, reliability of the joining condition between the substrate and the crystalline semiconductor particles can be improved, thereby realizing a photoelectric conversion device having high conversion efficiency.

摘要翻译： 根据本发明的光电转换装置包括铝基板或在其上形成有铝层的基板，沉积在基板上的许多p型晶体半导体颗粒，插入在多个p型晶体半导体颗粒中的绝缘体和类型半导体 区域形成在p型结晶半导体颗粒的上部。 在铝层和p型结晶半导体颗粒之间的边界部分中形成包含铝和半导体材料的合金部分，并且在合金部分和p型晶体半导体颗粒之间的界面部分中形成p +区域 p型结晶半导体颗粒的侧面。因此，可以提高基板和结晶半导体颗粒之间的接合条件的可靠性，从而实现具有高转换效率的光电转换装置。

公开(公告)号：US6130380A

公开(公告)日：2000-10-10

申请号：US66822

申请日：1998-04-28

申请人： Kazuyo Nakamura

发明人： Kazuyo Nakamura

IPC分类号： H01L31/04 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/068 ,  H01L31/18 ,  H01L31/06

CPC分类号： H01L31/022425 ,  H01L31/022441 ,  H01L31/036 ,  H01L31/061 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： In a solar cell, a crystal defect layer by ion implantation or an amorphous layer by ion implantation is formed between p type diffusion layers provided in an island-like manner at a side opposite to a light receiving surface of a low concentration p type semiconductor single crystalline substrate. The element of the ion implantation may be at least one selected from the group consisting of hydrogen, silicon, germanium, fluorine, oxygen and carbon. The constituent substance of the semiconductor substrate, such as Si is preferably used for the ion implantation. In such a solar cell structure having the crystal defect or amorphous layer, relatively long wavelength light that could not effectively be utilized in the prior art solar cell may be utilized so that the photoelectric conversion efficiency may be improved.

摘要翻译： 在太阳能电池中，通过离子注入的晶体缺陷层或通过离子注入的非晶层形成在岛状的p型扩散层的与低浓度p型半导体单体的受光面相反的一侧 晶体衬底。 离子注入的元素可以是选自氢，硅，锗，氟，氧和碳中的至少一种。 诸如Si的半导体衬底的构成物质优选用于离子注入。 在具有晶体缺陷或非晶层的这种太阳能电池结构中，可以利用在现有技术的太阳能电池中不能有效利用的相对长的波长的光，从而可以提高光电转换效率。