公开(公告)号：US11107935B2

公开(公告)日：2021-08-31

申请号：US16744490

申请日：2020-01-16

申请人： SUNPOWER CORPORATION

发明人： Denis De Ceuster ,  Peter John Cousins

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/061 ,  H01L31/068 ,  H01L31/18

摘要： In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.

公开(公告)号：US20190280142A1

公开(公告)日：2019-09-12

申请号：US16113170

申请日：2018-08-27

申请人： Kabushiki Kaisha Toshiba

发明人： Soichiro SHIBASAKI ,  Sara Yoshio ,  Naoyuki Nakagawa ,  Mutsuki Yamazaki ,  Kazushige Yamamoto ,  Yuya Honishi

IPC分类号： H01L31/061 ,  H01L31/0216 ,  H01L31/0725 ,  H01L31/0749 ,  H01L31/18 ,  H02S40/32 ,  H02S40/38

摘要： According to one embodiment, a solar cell includes a first electrode, a second electrode, a light-absorbing layer, and a plurality of metal parts. The light-absorbing layer is interposed between the first electrode and the second electrode. The metal parts are present on a surface of the first electrode opposing the second electrode. A void is provided in at least a part between the metal parts.

公开(公告)号：US20190058068A1

公开(公告)日：2019-02-21

申请号：US16048929

申请日：2018-07-30

申请人： Drexel University

发明人： Jonathan E. Spanier ,  Vladimir M. Fridkin ,  Alessia Polemi ,  Andrew M. Rappe

IPC分类号： H01L31/032 ,  H01L31/0224 ,  H01L51/42 ,  H01L51/44 ,  H01G9/20 ,  H01L31/061

摘要： The present invention is directed to photovoltaic and photogalvanic devices and methods of generating electrical energy and power or detecting light therefrom, based on a novel nano-enhanced bulk photovoltaic effect using non-centrosymmetric crystals, including ferroelectric and piezoelectric materials, where the non-centrosymmetry is the equilibrium state or it is static or dynamically induced. In certain embodiments, the device comprises a layer of non-centrosymmetric crystalline materials, and a plurality of electrodes disposed in an array upon or penetrating into at least one surface of the crystalline material, the electrodes being optimally spaced to capture the ballistic carriers generated upon irradiation of the crystalline material.

公开(公告)号：US09825199B2

公开(公告)日：2017-11-21

申请号：US15392163

申请日：2016-12-28

申请人： Natcore Technology, Inc.

发明人： David E. Carlson

IPC分类号： B23K26/36 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/20 ,  H01L31/068 ,  B23K26/362 ,  B23K26/402 ,  B23K26/08 ,  B23K26/0622 ,  H01L31/061 ,  G02B26/10 ,  H01L31/0216 ,  B23K26/361 ,  B23K103/00 ,  B23K101/40 ,  B23K101/42

CPC分类号： H01L31/1876 ,  B23K26/0622 ,  B23K26/0876 ,  B23K26/36 ,  B23K26/361 ,  B23K26/362 ,  B23K26/402 ,  B23K2101/40 ,  B23K2101/42 ,  B23K2103/50 ,  B23K2103/56 ,  G02B26/106 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/061 ,  H01L31/0682 ,  H01L31/074 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1892 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized to ablate, transfer material, and/or laser-dope or laser fire contacts. Laser ablation can be utilized to remove and pattern openings in a passivated or emitter layer. Laser transferring may then be utilized to transfer dopant and/or contact materials to the patterned openings, thereby forming an interdigitated finger pattern. The laser processing system may also be utilized to plate a conductive material on top of the transferred dopant or contact materials.

公开(公告)号：US20170278998A1

公开(公告)日：2017-09-28

申请号：US15122725

申请日：2015-03-04

申请人： MITSUBISHI ELECTRIC CORPORATION

发明人： Hiroya YAMARIN ,  Yusuke SHIRAYANAGI

IPC分类号： H01L31/061 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/02 ,  H01L31/0224

CPC分类号： H01L31/061 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

摘要： A manufacturing method for a solar cell includes a step of forming a p-type diffusion layer on one principal surface side of an n-type silicon substrate and forming an n-type silicon substrate having a pn junction, a step of forming a laminated film of a silicon oxide film and a silicon nitride film as a passivation film on a surface on a side of a light receiving surface that is an n type, a step of forming an open region in the passivation film, a step of diffusing n-type impurities with respect to the open region of the passivation film by using the passivation film as a mask to form a high-concentration diffusion region, and a step of forming a metal electrode selectively in the high-concentration diffusion region that is exposed in the open region of the passivation film.

公开(公告)号：US20170236965A1

公开(公告)日：2017-08-17

申请号：US15327385

申请日：2015-07-21

申请人： Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH

发明人： Sven Ring ,  Moshe Weizman ,  Holger Rhein ,  Christof Schultz ,  Frank Fink ,  Stefan Gall ,  Rutger Schlatmann

IPC分类号： H01L31/061 ,  H01L31/0445 ,  H01L31/0368 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/061 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0445 ,  H01L31/046 ,  H01L31/056 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1868 ,  H01L31/1872 ,  H01L31/1884 ,  Y02E10/52

摘要： A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

公开(公告)号：US09722106B2

公开(公告)日：2017-08-01

申请号：US14349111

申请日：2012-10-05

申请人： Total Marketing Services ,  Katholieke Universiteit Leuven, K.U. Leuven R&D ,  IMEC

发明人： Perine Jaffrennou ,  Johan Das ,  Angel Uruena De Castro

IPC分类号： H01L31/0224 ,  H01L31/0216 ,  H01L31/061 ,  H01L31/18 ,  B23K26/362 ,  B23K26/40 ,  B23K103/16

CPC分类号： H01L31/022441 ,  B23K26/361 ,  B23K26/362 ,  B23K26/40 ,  B23K2103/172 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/061 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to the manufacturing process of a solar cell (1) with back contact and passivated emitter, comprising a dielectric stack (10) of at least two layers consisting of at least a first dielectric layer (11) made of AlOx in contact with a p-type silicon layer (3), and a second dielectric layer (13) deposited on the first dielectric layer (11). Besides, the method of manufacturing comprising a formation step of at least one partial opening (15) preferably by laser ablation into the dielectric stack (10), sparing at least partially the aforementioned first dielectric layer.

公开(公告)号：US08952354B2

公开(公告)日：2015-02-10

申请号：US13264444

申请日：2010-04-13

申请人： Jerry M. Olson

发明人： Jerry M. Olson

IPC分类号： H01L31/0352 ,  B82Y15/00 ,  H01L27/142 ,  H01L31/061 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/078

CPC分类号： H01L31/03529 ,  H01L31/0475 ,  H01L31/061 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/0725 ,  H01L31/078 ,  Y02E10/544 ,  Y10S977/762 ,  Y10S977/948 ,  Y10S977/954

摘要： A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is doped such that a first p-n junction is formed in the substrate (3). The photovoltaic cell has a nanowire (2) that is arranged on the surface (31) of the substrate (3) at a position where the doped region (4) is located in the substrate (3), such that a second p-n junction is formed at the nanowire (2) and in series connection with the first p-n junction.

摘要翻译： 一种用于将光转换成电能的多结光伏电池，包括具有表面（31）的衬底（3），其中掺杂在衬底（3）的表面（31）处的区域（4）使得第一pn 接头形成在基板（3）中。 光伏电池具有在掺杂区域（4）位于衬底（3）中的位置处布置在衬底（3）的表面（31）上的纳米线（2），使得第二pn结是 形成在纳米线（2）处并与第一个pn结串联连接。

公开(公告)号：US08853527B2

公开(公告)日：2014-10-07

申请号：US12070371

申请日：2008-02-15

申请人： Henry Hieslmair

发明人： Henry Hieslmair

IPC分类号： H01L31/0224 ,  H01L31/042 ,  H01L31/068 ,  H01L31/05 ,  H01L31/061 ,  H01L31/18 ,  H01L27/142 ,  G01R31/26

CPC分类号： H01L31/0682 ,  H01L21/228 ,  H01L21/268 ,  H01L31/02 ,  H01L31/022441 ,  H01L31/046 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/061 ,  H01L31/1804 ,  H02S40/32 ,  H02S50/10 ,  Y02E10/547 ,  Y02P70/521

摘要： Photovoltaic modules comprise solar cells having doped domains of opposite polarities along the rear side of the cells. The doped domains can be located within openings through a dielectric passivation layer. In some embodiments, the solar cells are formed from thin silicon foils. Doped domains can be formed by printing inks along the rear surface of the semiconducting sheets. The dopant inks can comprise nanoparticles having the desired dopant.

摘要翻译： 光伏模块包括沿着电池背面具有相反极性的掺杂区域的太阳能电池。 掺杂区域可以位于通过介电钝化层的开口内。 在一些实施例中，太阳能电池由薄硅箔形成。 可以通过沿着半导体片的后表面印刷油墨来形成掺杂区域。 掺杂剂油墨可以包含具有所需掺杂剂的纳米颗粒。

公开(公告)号：US10573764B2

公开(公告)日：2020-02-25

申请号：US14159292

申请日：2014-01-20

申请人： SUNPOWER CORPORATION

发明人： Denis De Ceuster ,  Peter John Cousins

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/061 ,  H01L31/068 ,  H01L31/18

摘要： In one embodiment, a solar cell has base and emitter diffusion regions formed on the back side. The emitter diffusion region is configured to collect minority charge carriers in the solar cell, while the base diffusion region is configured to collect majority charge carriers. The emitter diffusion region may be a continuous region separating the base diffusion regions. Each of the base diffusion regions may have a reduced area to decrease minority charge carrier recombination losses without substantially increasing series resistance losses due to lateral flow of majority charge carriers. Each of the base diffusion regions may have a dot shape, for example.