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    Semiconductor device and apparatus using the same
    2.
    发明授权
    Semiconductor device and apparatus using the same 失效
    半导体器件和使用它的设备

    公开(公告)号：US3811074A

    公开(公告)日：1974-05-14

    申请号：US24099972

    申请日：1972-04-04

    申请人： NIPPON TELEGRAPH & TELEPHONE

    发明人： SUZUKI T ,  MIZUSHIMA Y

    IPC分类号： G09G3/22 ,  G11C19/28 ,  H01L27/102 ,  H01L29/00 ,  H03K19/088 ,  H01L11/10

    CPC分类号： H03K19/088 ,  G09G3/22 ,  G11C19/28 ,  H01L27/1028 ,  H01L29/00

    摘要： A semiconductor device having a plurality of semiconductor elements formed in a monolithic manner in a semiconductor wafer of a first conductivity type while being sequentially arranged, in which each of the plurality of semiconductor elements consists of at least a collector region formed in the semiconductor wafer and having the first conductivity type and higher conductivity than the semiconductor wafer, a base region formed in the semiconductor wafer and having the first conductivity type and higher conductivity than the semiconductor wafer, and a relatively small emitter region formed in the semiconductor wafer between the base and collector regions and having a second conductivity type, at least the emitter region of each semiconductor element being adapted for exclusive use therewith and each semiconductor element presenting a current controlled negative resistance characteristic between the emitter and collector regions with a biasing power source being applied between the base and collector regions, and in which the distance between two adjacent ones of the semiconductor elements is selected so that when one of the two adjacent semiconductor elements is in the on state with the biasing power source being applied between the base and collector regions of the two semiconductor elements, the turnover voltage of the other semiconductor element may become low. A shift register, photoelectric conversion apparatus, logic functional circuit or apparatus and so on which employ such a semiconductor device.

    摘要翻译： 一种具有多个半导体元件的半导体器件，其具有在顺序排列的第一导电类型的半导体晶片中以单片形式形成，其中所述多个半导体元件中的每一个至少由形成在所述半导体晶片中的集电极区域和 具有比半导体晶片具有的第一导电类型和更高的导电率，形成在半导体晶片中并且具有比半导体晶片的第一导电类型和更高导电性的基极区域，以及形成在半导体晶片中的基极和 集电极区域并且具有第二导电类型，至少每个半导体元件的发射极区域适用于其中，并且每个半导体元件在发射极和集电极区域之间呈现电流控制的负电阻特性，偏置电源施加在 基础 和集电极区域，并且其中选择两个相邻的半导体元件之间的距离，使得当两个相邻的半导体元件中的一个处于导通状态时，偏置电源施加在两个半导体元件的基极和集电极区域之间 半导体元件，另一半导体元件的周转电压可能变低。 使用这种半导体器件的移位寄存器，光电转换装置，逻辑功能电路或装置等。

    Semiconductor switching element and a semiconductor switching involving the same
    3.
    发明授权
    Semiconductor switching element and a semiconductor switching involving the same 失效
    半导体开关元件和涉及其的半导体开关元件

    公开(公告)号：US3781806A

    公开(公告)日：1973-12-25

    申请号：US3781806D

    申请日：1972-01-24

    申请人： NIPPON TELEGRAPH & TELEPHONE

    发明人： MIZUSHIMA Y ,  SUDO I

    IPC分类号： H01L27/102 ,  H01L29/00 ,  H03K17/72 ,  H03K17/79 ,  H03K19/082 ,  H01J39/12 ,  H01L11/14 ,  H04Q9/00

    CPC分类号： H03K19/082 ,  H01L27/1028 ,  H01L29/00 ,  H03K17/72 ,  H03K17/79

    摘要： A semiconductor switching element and a semiconductor switching device involving the same which comprise at least one collector region diffused in a semiconductor substrate from its surface, containing a high concentration of impurities having the same type of conductivity as said substrate and displaying a higher degree of said conductivity than said substrate and formed into a fully narrow area, a base region diffused at a space of approximately 50 microns max. from said collector region, as measured from the same surface of said semiconductor substrate as that on which there is formed said collector region, in a manner to make the edge of said base region facing said collector region sufficiently longer than that of said collector region and containing a high concentration of impurities having the same type of conductivity as said semiconductor substrate and displaying a higher degree of said conductivity than said semiconductor substrate and at least one emitter region diffused from the same surface of said semiconductor substrate as that through which the aforesaid two regions are diffused and having an opposite type of conductivity to said semiconductor substrate.

    摘要翻译： 一种半导体开关元件和包括该半导体开关元件的半导体开关元件，其包括从其表面扩散到半导体衬底中的至少一个集电极区域，其包含与所述衬底具有相同类型的导电性的高浓度杂质，并且显示更高程度的所述 电导率比所述衬底形成完全狭窄的区域，在最大约50微米的空间扩散的基极区域。 从所述集电极区域，以与形成所述集电极区域的所述半导体衬底的相同的表面测量的方式，使得所述基极区域的面对所述集电区域的边缘比所述集电极区域的边缘充分长， 含有与所述半导体衬底具有相同类型导电性的高浓度杂质，并且显示比所述半导体衬底更高程度的所述电导率和从所述半导体衬底的与所述半导体衬底相同的表面扩散的至少一个发射区， 区域扩散并具有与所述半导体衬底相反的导电性。

    Memory cell resistor device
    4.
    发明授权
    Memory cell resistor device 失效
    存储单元电阻器件

    公开(公告)号：US4426655A

    公开(公告)日：1984-01-17

    申请号：US293413

    申请日：1981-08-14

    申请人： Harsaran S. Bhatia ,  David B. Eardley ,  Santosh P. Gaur

    发明人： Harsaran S. Bhatia ,  David B. Eardley ,  Santosh P. Gaur

    IPC分类号： G11C11/34 ,  H01L27/102 ,  H01L29/74 ,  H01L29/48

    CPC分类号： H01L27/1028 ,  G11C11/34

    摘要： A dynamic memory cell uses a low barrier Schottky contact at a drain region to eliminate the need for an external gating diode. The drain is separated from source and injector regions by a heavily doped N+ reach through region extending to a heavily doped N+ blanket semiconductor. Holes injected into one of the separated regions are trapped by high-low junctions and are detected by sensing the source-drain current.

    摘要翻译： 动态存储单元在漏极区域使用低阻挡肖特基接触以消除对外部门控二极管的需要。 漏极通过重掺杂N +到达区域延伸到重掺杂的N +覆盖半导体与源极和注入器区域分离。 注入一个分离区域的孔被高低交点捕获，并通过感测源极 - 漏极电流来检测。

    Semiconductor switching element
    5.
    发明授权
    Semiconductor switching element 失效
    半导体开关元件

    公开(公告)号：US3657616A

    公开(公告)日：1972-04-18

    申请号：US3657616D

    申请日：1969-12-15

    申请人： NIPPON TELEGRAPH & TELEPHONE

    发明人： MIZUSHIMA YOSHIHIKO ,  SUDO TSUNETA

    IPC分类号： H01L27/146 ,  H01L27/102 ,  H01L29/00 ,  H01L29/74 ,  H03K17/693 ,  H03K19/08 ,  H03K19/094 ,  H01L11/08

    CPC分类号： H03K19/09403 ,  H01L27/1028 ,  H01L29/00 ,  H03K17/693 ,  H03K19/08

    摘要： A semiconductor switching element which comprises at least one collector region diffused in a semiconductor substrate from its surface, the collector region containing a high concentration of impurities imparting thereto the same type of conductivity as the substrate and displaying a higher degree of conductivity than the substrate and being formed into a fully narrow area, a base region diffused at a space of approximately 50 microns max. from the collector region, as measured from the same surface of the substrate as that on which there is formed the collector region, such that the edge of the base region facing the collector region is sufficiently longer than that of the collector region, the base region containing a high concentration of impurities imparting thereto the same type of conductivity as the semiconductor substrate and displaying a higher degree of conductivity than the substrate, and at least one emitter region diffused from the same surface of the substrate as that through which the aforesaid two regions are diffused and having an opposite type of conductivity as the substrate.

    摘要翻译： 一种半导体开关元件，其包括从其表面扩散到半导体衬底中的至少一个集电极区域，所述集电极区域含有高浓度的杂质，赋予与衬底相同的导电性并且显示比衬底更高的导电性， 形成为完全狭窄的区域，在最大约50微米的空间扩散的基极区域。 从与集电极区域相同的与基板相同的表面测定的集电极区域，使得面对集电极区域的基极区域的边缘比集电极区域的边缘充分长，基极区域 含有高浓度的杂质赋予其与半导体衬底相同类型的导电性并且显示出比衬底更高的导电性，以及至少一个发射极区域与衬底的与上述两个区域相同的表面扩散 被扩散并具有与衬底相反的导电性。