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70 条记录 (耗时 0.013 秒)

    Thyristor with gold doping profile
    1.
    发明授权
    Thyristor with gold doping profile 失效
    带有黄金配置文件的THYRISTOR

    公开(公告)号：US3860947A

    公开(公告)日：1975-01-14

    申请号：US41227173

    申请日：1973-11-02

    申请人： GAMO HIROSHI ,  KAWAKAMI AKIRA

    发明人： GAMO HIROSHI ,  KAWAKAMI AKIRA

    IPC分类号： H01L21/00 ,  H01L21/22 ,  H01L29/10 ,  H01L29/167 ,  H01L11/10

    CPC分类号： H01L29/167 ,  H01L21/00 ,  H01L21/22 ,  H01L21/221 ,  H01L29/10

    摘要： The disclosed semiconductor switching device is comprised of a PNPN or NPNP structure having four semiconductor regions, one region of the two central regions having a higher specific resistivity and sandwiched between a centrally positioned junction and one of end junctions of three PN junctions formed between the four regions. The central region of higher specific resistivity has impurities for controlling the lifetime of carriers, and its concentration distribution being such that the impurity concentration of that portion adjacent to the central junction is higher than that of the portion adjacent to the abovementioned end junction.

    摘要翻译： 所公开的半导体开关器件由具有四个半导体区域的PNPN或NPNP结构组成，两个中心区域的一个区域具有较高的电阻率，并且夹在中间定位的结与在四个之间形成的三个PN结的一个端部结 地区。 具有较高电阻率的中心区域具有用于控制载流子寿命的杂质，其浓度分布使得与中心连接点相邻的部分的杂质浓度高于与上述末端连接部相邻的部分的杂质浓度。

    Stable thyristor device
    2.
    发明授权
    Stable thyristor device 失效
    稳定的THYRISTOR设备

    公开(公告)号：US3812405A

    公开(公告)日：1974-05-21

    申请号：US32736673

    申请日：1973-01-29

    申请人： MOTOROLA INC

    发明人： CLARK L

    IPC分类号： H01L27/07 ,  H01L29/87 ,  H01L11/10

    CPC分类号： H01L29/87 ,  H01L27/0705

    摘要： A two-terminal thyristor device including a thyristor combined with a field effect transistor having a firing voltage that is dependent upon the pinch-off voltage of the field effect transistor. The field effect transistor is connected to reverse bias the PNP emitter-base junction until the applied voltage increases to the value at which the field effect transistor becomes pinched off. At this point the product of the PNP gain and NPN gain is greater than unity, and the device switches to a conducting mode. The field effect transistor establishes the holding current in the conduction mode for the switching device.

    Semiconductor device and apparatus using the same
    3.
    发明授权
    Semiconductor device and apparatus using the same 失效
    半导体器件和使用它的设备

    公开(公告)号：US3811074A

    公开(公告)日：1974-05-14

    申请号：US24099972

    申请日：1972-04-04

    申请人： NIPPON TELEGRAPH & TELEPHONE

    发明人： SUZUKI T ,  MIZUSHIMA Y

    IPC分类号： G09G3/22 ,  G11C19/28 ,  H01L27/102 ,  H01L29/00 ,  H03K19/088 ,  H01L11/10

    CPC分类号： H03K19/088 ,  G09G3/22 ,  G11C19/28 ,  H01L27/1028 ,  H01L29/00

    摘要： A semiconductor device having a plurality of semiconductor elements formed in a monolithic manner in a semiconductor wafer of a first conductivity type while being sequentially arranged, in which each of the plurality of semiconductor elements consists of at least a collector region formed in the semiconductor wafer and having the first conductivity type and higher conductivity than the semiconductor wafer, a base region formed in the semiconductor wafer and having the first conductivity type and higher conductivity than the semiconductor wafer, and a relatively small emitter region formed in the semiconductor wafer between the base and collector regions and having a second conductivity type, at least the emitter region of each semiconductor element being adapted for exclusive use therewith and each semiconductor element presenting a current controlled negative resistance characteristic between the emitter and collector regions with a biasing power source being applied between the base and collector regions, and in which the distance between two adjacent ones of the semiconductor elements is selected so that when one of the two adjacent semiconductor elements is in the on state with the biasing power source being applied between the base and collector regions of the two semiconductor elements, the turnover voltage of the other semiconductor element may become low. A shift register, photoelectric conversion apparatus, logic functional circuit or apparatus and so on which employ such a semiconductor device.

    摘要翻译： 一种具有多个半导体元件的半导体器件，其具有在顺序排列的第一导电类型的半导体晶片中以单片形式形成，其中所述多个半导体元件中的每一个至少由形成在所述半导体晶片中的集电极区域和 具有比半导体晶片具有的第一导电类型和更高的导电率，形成在半导体晶片中并且具有比半导体晶片的第一导电类型和更高导电性的基极区域，以及形成在半导体晶片中的基极和 集电极区域并且具有第二导电类型，至少每个半导体元件的发射极区域适用于其中，并且每个半导体元件在发射极和集电极区域之间呈现电流控制的负电阻特性，偏置电源施加在 基础 和集电极区域，并且其中选择两个相邻的半导体元件之间的距离，使得当两个相邻的半导体元件中的一个处于导通状态时，偏置电源施加在两个半导体元件的基极和集电极区域之间 半导体元件，另一半导体元件的周转电压可能变低。 使用这种半导体器件的移位寄存器，光电转换装置，逻辑功能电路或装置等。

    Bidirectional switching semiconductor device
    4.
    发明授权
    Bidirectional switching semiconductor device 失效
    双向切换半导体器件

    公开(公告)号：US3784886A

    公开(公告)日：1974-01-08

    申请号：US3784886D

    申请日：1972-10-03

    申请人： HITACHI LTD

    发明人： MIYATA K ,  OKAMURA M

    IPC分类号： H01L29/74 ,  H01L29/747 ,  H01L29/861 ,  H01L29/87 ,  H01L9/12 ,  H01L11/10 ,  H01L19/00

    CPC分类号： H01L29/87

    摘要： A bidirectional switching semiconductor device comprising a pair of four layer switching semiconductor devices which are connected in reverse parallel with each other; the base layers of respective devices being electrically connected to each other, thereby improving the turn-on characteristics of the device.

    摘要翻译： 一种双向开关半导体器件，包括相互并联连接的一对四层开关半导体器件; 各个器件的基极层彼此电连接，从而提高器件的导通特性。

    Inverse gate semiconductor controlled rectifier
    5.
    发明授权
    Inverse gate semiconductor controlled rectifier 失效
    反向栅极半导体控制整流器

    公开(公告)号：US3725753A

    公开(公告)日：1973-04-03

    申请号：US3725753D

    申请日：1972-04-14

    申请人： WESTINGHOUSE BRAKE & SIGNAL

    发明人： GARRETT J

    IPC分类号： H01L29/00 ,  H01L29/10 ,  H01L29/423 ,  H01L29/74 ,  H01L11/10

    CPC分类号： H01L29/423 ,  H01L29/00 ,  H01L29/10 ,  H01L29/74

    摘要： An inverse gate semiconductor controlled rectifier device including a base region, and main and auxiliary emitter regions respectively forming a main and auxiliary PN junction with the said base region is provided with a conductive layer located on the surface of the base region in ohmic contact therewith and extending from adjacent the auxiliary emitter junction to alongside an edge of the main emitter junction but not of itself bridging either the main or auxiliary junction. The conductive layer, in operation, expands a preferential current path between the auxiliary emitter and main emitter along the said edge.

    摘要翻译： 包括基极区域和分别与所述基极区域形成主PN结和辅助PN结的主发射极区域和辅助发射极区域的反向栅极半导体可控整流器件设置有位于基极区域的表面上的欧姆接触的导电层， 从辅助发射极结附近延伸到主发射极结的边缘旁边，但本身不桥接主或辅助结。 导电层在操作中沿着所述边缘扩展辅助发射极和主发射极之间的优选电流路径。